本論文研究應用於UWB接收機之前端CMOS RFICs。設計的晶片包含了3-10-GHz低電壓寬頻低雜訊放大器及3-5-GHz寬頻混頻器。其所研製之晶片皆使用國家晶片中心（CIC）提供之標準TSMC CMOS 0.18 µm製程，晶片量测上除了寬頻低雜訊放大器使用on-wafer方式進行量測之外，其餘的晶片皆打鎊線至PCB板上量測。
3-10-GHz低電壓寬頻低雜訊放大器利用雙回授式放大器及緩衝放大器的方式得到寬頻訊號放大之特性。設計上利用了增益圓之圖形法實現寬頻增益平坦度，對於電路設計者而言，此方法提供了一個簡單又省時的寬頻放大器實現方式。量測結果顯示，增益為6.9-10.46 dB、雜訊指數為4.71-5.92 dB、input P1dB為-8.5- -2.0 dBm、IIP3為7.5-11.9 dBm。
3-5-GHz寬頻混頻器晶片可以分成兩部份：(1)摺疊式混頻器，主要是提出一個適用於低電壓操作之寬頻混頻器。為了不讓低電壓操作影響了混頻器的特性，其轉導級部分採用CMOS反相器架構，透過PMOS電晶體來提高增益及線性度。此外，利用shunt-peaking的方法增加操作頻寬。量測顯示，Band 1頻段內的轉換增益為3-8.7 dB、input P1dB為-19.5- -13.5 dBm、IIP3為-10.7- -2.35 dBm。Band 2頻段內的轉換增益為2.3-7.6 dB、input P1dB為-18- -13.5 dBm、IIP3為-5.35- -0.65 dBm。Band 3頻段內的轉換增益為2.9-3.9 dB、input P1dB為-15- -10.5 dBm、IIP3為-4- -1 dBm。(2)次諧波式混頻器，藉由將LO訊號的頻率減半，消除直接降頻接收機之自我混頻效應。同時，利用gm-boosting的差動轉導架構，實現低功率混頻器。量測顯示，Band 1頻段內的轉換增益為1.42-5.76 dB、input P1dB為-17- -15 dBm、IIP3為-10.71- -3.4 dBm。Band 2頻段內的轉換增益為0.98-4.35 dB、input P1dB為-16- -11.5 dBm、IIP3為-10.33- -0.68 dBm。Band 3頻段內的轉換增益為1.1-3.0 dB、input P1dB為-15- -12 dBm、IIP3為-9.87- -0.16 dBm。

This thesis presents the research on applications of CMOS RFICs for UWB receiver. The first part presents 3-10-GHz low-voltage broadband CMOS low noise amplifier, the second part is 3-5-GHz broadband CMOS folded mixer, and the third part is 3-5-GHz broadband CMOS even-harmonic mixer. The chips are fabricated by a TSMC standard 0.18-μm CMOS process offered by National Chip Implementation Center (CIC) is adopted. The RFICs applied to 3-5-GHz mixer is measured on FR-4 PCB, and 3-10-GHz LNA is on wafer.
3-10-GHz low-voltage broadband CMOS LNA is the combination of a dual feedback amplifier and a buffer. A dual feedback broadband gain stage is based on graphical method. This method saves time for circuit designer. Measured results show a gain of 6.9-10.46 dB, noise figure of 4.71-5.92 dB, input P1dB of -8.5- -2 dBm, and IIP3 of 7.5-11.9 dBm.
3-5-GHz broadband CMOS folded mixer is based on Gilber-type mixer. The transconductor stage used CMOS inverter amplifier in order to operate low voltage, and the shunt-peaking technique is used to improve its bandwidth. Measured results show a conversion gain of 2.3-8.7 dB, input P1dB of -19.5- -10.5 dBm, and IIP3 of -10.7- -0.65 dBm.
3-5-GHz broadband CMOS even-harmonic mixer is based on double balance active mixer. The gm-boosting method saves power for this mixer. Measured results show a conversion gain of 0.98-5.76 dB, input P1dB of -17- -11.5 dBm, and IIP3 of -10.71- -0.16 dBm.

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