在本論文中，探討了兩種相對應製程，傳統接面與漸進接面的高壓(HV)金氧半場效電晶體(MOSFET)元件之特性，包含了其崩潰電壓的差異以及崩潰機制，與受熱載子影響產生的退化及其元件生命週期之完整性議題。
首先，對於高壓金氧半場效電晶體元件在市場中的應用與其優點特色作闡述。接著描述研究之動機，對於使用漸進接面之高壓金氧半電晶體在其與傳統接面比較下，崩潰電壓增進之現象，其延伸之研究。本論文中亦會介紹元件崩潰之機制、熱載子效應與元件可靠度之關係、以及分析元件特性之電腦輔助設計(TCAD)模擬軟體。
基礎簡介後，呈現本研究中使用傳統接面以及漸進接面之製程差異，並且陳述元件的結構和量測的設定與方法，其中包括：元件電流ID-VD 、線性區電流ID-VG、基板電流Isub-VG以及崩潰電壓VBD之量測。
本研究的內容，主要觀察到使用漸進接面之高壓金氧半場效電晶體之元件，在崩潰電壓的方面，相較與使用傳統接面的高壓金氧半場效電晶體，有較高的耐壓特性；而這個現象在更大的元件尺寸中更為明顯。因此使用電腦輔助設計(TCAD)模擬軟體來分析元件在不同條件下的電場，以及其衝擊離子化效應(Impact Ionization)之分佈，進一步研究其崩潰的機制以及為何使用漸進接面的大尺寸元件可以獲得更加的耐壓效果。
而本研究之另一個重點為探討漸進接面之元件在熱載子可靠度方面，與傳統接面之高壓金氧半電晶體之差異。文中先敘述了熱載子可靠度量測實驗的設置，並且佐以電腦輔助設計模擬之結果，分析兩者在熱載子可靠度以及元件生命週期上並沒有太大的差異，最後元件的生命週期對基板電壓做出元件生命週期斜率圖，對於未來以漸進接面製程製造之高壓金氧半場效電晶體元件的研究可以有更多的參考。

In the thesis, special process manufactured high voltage metal-oxide-semiconductor field effect transistors (HV-MOSFET) with gradual junction was studied. Devices’ breakdown voltage, hot-carrier-induced degradation and lifetime were compared with high-voltage devices with traditional junction. The different mechanism and device lifetime between the devices was investigated.
First, the advantages and the usage of HVMOSFET were illustrated. The motivation of further studying high-voltage device with gradual junction was presented. Due to the fact that high voltage devices with gradual junction had better off-state breakdown voltage performance comparing with device with traditional junction. Thus, the mechanism of devices’ off-state breakdown, relationship between hot carrier effect and device reliability and lifetime were performed in the thesis. Also, technology computer aid design (TCAD) was utilized to discuss the details of the devices.
Therefore, the differential between high-voltage devices with traditional junction and gradual junction were presented in the second part of the thesis, and the structure of the devices and the measurement methodology and setup were also described. Including device current ID-VD, linear region current ID-VG, substrate current Isub-VG and off-state breakdown voltage VBD.
The main part of the thesis were focus in part three and part four. In part three, the observation of improvement of off-state breakdown voltage in devices with gradual junction was proved. And also indicated that the improvement of off-state breakdown voltage was even better in bigger dimension devices with gradual junction. As a result, TCAD was used to analysis the mechanism between these two kinds of devices, for instance, the electric field contour, impact ionization rate contour.
The reliability issue was discussed in part four, which the hot carrier stress was applied to study the degradation of the devices. The measurement setup and stress condition were presented. TCAD simulation software was used to confirm the measurement data. At the end, the plot of devices’ lifetime versus substrate current was demonstrated. It can be used to predict the lifetime of high-voltage devices’ lifetime if the structure is demanded in application.

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