本研究主要分為兩大主軸，第一部分將討以水熱法的方式，於電晶體的源極和汲極間成長氧化鋅奈米線，並利用這些奈米線作為傳輸載子的主動層，完成電晶體的製作與量測該元件的電特性。研究中藉由不同的材料做為成長氧化鋅的晶種層，觀察氧化鋅奈米線於其上成長之情形。由於本研究所採用的是底部閘極（Bottom gate）的元件結構，因此成長於源極或汲極頂部的奈米線，不僅無法形成有效的載子傳輸通道，同時也不易受到底部閘極的控制，進而影響到電晶體的開關等特性。為了改善上述的現象，透過外力施壓的方式去除多餘的奈米線，或是於電極頂部的表面覆蓋一層阻擋奈米線成長的材料，以降低無法形成有效通道的奈米線數量，藉此改善元件的漏電流與電特性。此外，當奈米線與閘極絕緣層間的間隙愈小時，可提升閘極對奈米線通道開關的控制能力。因此在成長氧化鋅奈米線時，藉由降低前驅物的濃度，控制奈米線的數量與成長的方向，以達到奈米線緊貼於基板表面成長的結果，同時也提升電晶體元件的轉換及輸出特性。
此外，由於氧化鋅奈米線對環境氣氛的變化相當敏感，尤其是當吸附氧氣或水氣時，會造成奈米線本身的阻抗改變，導致元件特性的偏移。因此，在本篇論文中利用氧電漿和熱退火等方式，對元件進行處理，藉此改變奈米線表面吸附氣體的情形，並觀察對元件特性的影響。同時，為了觀察氧化鋅奈米線電晶體在長時間操作下的穩定性，在奈米線電晶體的表面沉積 Spin on glass（SOG）或環氧樹脂（Epoxy）達到表面鈍化的目的，以改善奈米線因吸附氣體而導致元件特性偏移的現象。

本論文的第二部份，為利用焦耳熱改善元件特性之討論。主要是根據在同一個串聯電路中，若施加一固定電壓的條件下，其流經各元件的電流應都相同。又因功率等於電流平方乘以電阻，所以元件中電阻越大的地方，其被施加的功率也越大，導致產生較多的熱。因此在本研究中將利用產生之焦耳熱來達到退火的目的，藉此改善元件之特性。在本研究中利用光微影技術製備鋁電極，再利用介電泳方式排列氧化鋅奈米線於電極上，隨後經熱壓處理以降低其接觸電阻，並於不同環境下（氮氣、空氣和 Epoxy 封裝後）在汲極施加偏壓探討其影響，且利用焦耳熱處理的過程中並不會使元件的溫度明顯提升，因此本製程將可在可撓曲基板或塑膠等不耐高溫的基板上進行電晶體製作及特性改善。

This dissertation mainly consist of two parts. The first part investigates growth of zinc oxide nanowires (ZnO NWs) by hydrothermal method; followed by characterization and application of these ZnO NWs as carrier transport layer between source and drain electrode in a transistor device. Different materials are used for the ZnO NWs nucleation layer which result in different growth conditions of the ZnO NWs. This research also found that low concentration precursor suppressed the number of ZnO NWs and affected its growth orientation, which also significantly improved the device switching characteristics. The ZnO NWs surface can absorb oxygen from the atmosphere which result in impedance change of the ZnO NWs carrier transport channel. The later part of this dissertation discuss about the improvement of transistor characteristics by Joule heating. The ZnO NWs are electrophoretically deposited between the aluminum electrodes. Then, the ZnO NWs were pressed on an elevated temperatures. Lastly, the local Joule heating effect was generated by applying bias voltage on the drain electrode under nitrogen atmosphere and epoxy passivation, which minimized the contact resistance within the device. No temperature rise was observed during the heating process, thereby open a possibility of device fabrication on flexible or plastic substrate.

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