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研究生： 林世瑄
Lin, Shih-Hsuan
論文名稱： P型通道金氧半場效電晶體於不同操作偏壓下物理機制與生命週期之研究
Physical Mechanism and Lifetime Prediction under Different Bias in p-Channel MOSFETs
指導教授： 陳志方
Chen, Jone-Fang
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2019
畢業學年度： 107
語文別： 英文
論文頁數： 79
中文關鍵詞： p型金氧半場效電晶體 、熱載子導致之退化 、電腦輔助設計模擬 、生命週期
外文關鍵詞： p-channel MOSFET, hot-carrier-induced degradation, TCAD simulation, Lifetime
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    • 本論文主要在探討p型(p-channel)金氧半場效電晶體(MOSFET)元件在不同操作偏壓中退化之物理機制以及其退化後之生命週期。
    首先，描述研究動機並介紹前人之實驗與研究成果，接著說明藉由短時間量測推斷出長時間退化曲線之方法，推導元件生命週期之公式，加以應用在低壓(LV)以及高壓(HV)元件上。本論文會介紹元件退化機制、熱載子效應等影響元件可靠度之議題，亦會介紹所引用的生命週期預測之基本論述，並搭配分析元件特性之電腦輔助設計(TCAD)模擬軟體。
    簡介後，將會介紹所採用的元件結構以及其基本特性，並介紹本研究之實驗設置，包括 On State、Off State 到 Subthreshold之電壓設置及量測方法介紹。
    本研究的內容主要想探討實驗之元件在On state的退化，並且搭配電腦輔助設計(TCAD)模擬軟體來推測可能之物理機制。
    最後探究是否可以藉由短時間之量測，推算出長時間之退化曲線。並且根據造成元件退化之原因，推導出元件之生命週期公式以及探討生命週期公式之適用條件。

    In the thesis, the degradation mechanism and lifetime prediction under different bias in p-channel MOSFET were investigated.
    First, the motivation and the previous work in earlier research would be introduced. Next, the method of obtaining the long-term degradation trend from short time measurement was studied, and the lifetime equation would be derived. Then, in this work, the concept was used in practice to derive the lifetime equation in LV and HV device to find that if the equation matches actual lifetime in our device. Also, the degradation mechanism and the reliability issues like hot carrier injection, impact ionization would be investigated. Moreover, TCAD simulation would also be introduced to diagnose the mechanism.
    After introduction, the structure and characteristic of our device would be showed. In addition, the experiment setup in on-state, subthreshold and off-state would also be presented.
    The mainly purpose of this study is investigating the degradation in on-state. Then, the probable degradation mechanism would be speculated with TCAD. Finally, we will derive the lifetime equation of the device and verify the suitability of the equation.

    中文摘要 I Abstract III 致謝 V Content VI Table Captions VIII Figure Captions X Chapter 1 1 1-1 Motivation of the thesis 1 1-2 Introduction of LV and HV devices applications 2 1-3 Introduction of scaling factor 3 1-4 Introduction of lifetime equation 4 1-5 Introduction of hot carrier reliability 5 1-6 Introduction of technology computer aid design 6 1-7 About the thesis 7 Chapter 2 15 2-1 Introduction 15 2-2 Device structure description 15 2-3 Measurement methodology 16 2-3-1 Measurement setup 16 2-3-2 ID-VD measurement 16 2-3-3 ID-VG measurement 17 2-3-4 Isub-VG measurement 18 2-3-5 IG-VG measurement 18 2-4 Summary 19 Chapter 3 28 3-1 Introduction 28 3-2 The methodology of hot carrier stress 28 3-3 Discussion of LV device degradation 29 3-4 Discussion of HV device degradation 31 3-5 Summary 33 Chapter 4 51 4-1 Introduction 51 4-2 Scaling factor and lifetime prediction in LV device 52 4-3 Scaling factor and lifetime prediction in HV device 54 4-4 Summary 55 Chapter 5 72 5-1 Conclusion 72 5-2 Future work 73 References 74 Table 1-1 Curve B is 1/S times faster than curve A to reach same degradation rate 14 Table 2-1 LV basic characteristic 27 Table 2-2 HV basic characteristic 27 Table 3-1 Condition of hot carrier stress 47 Table 3-2(a) Stress setup at different Vd for fixed Vg at Ig peak in LV device 48 Table 3-2(b) Stress setup at different Vd for fixed Vg at Ib peak in LV device 48 Table 3-2(c) Stress setup at different Vg at on-state, off-state and sub-threshold for fixed Vd in LV device 49 Table 3-3(a) Stress setup at different Vd for fixed Vg at Ig peak in HV device 49 Table 3-3(b) Stress setup at different Vd for fixed Vg at Ib peak in HV device 50 Table 3-3(c) Stress setup at different Vg at on-state, off-state and sub-threshold for fixed Vd in HV device 50 Table 4-1 The scaling factor at different Vd for fixed Vg at Ig peak in LV device 69 Table 4-2 The scaling factor at different Vd for fixed Vg at Ib peak in LV device 69 Table 4-3 The scaling factor at on-state, off-state and sub-threshold for fixed Vd in LV device 70 Table 4-4 The scaling factor at different Vd for fixed Vg at Ig peak in HV device 70 Table 4-5 The scaling factor at different Vd for fixed Vg at Ib peak in HV device 71 Table 4-6 The scaling factor at on-state, off-state and sub-threshold for fixed Vd in HV device 71 Fig. 1-1 High voltage devices applications. 8 Fig. 1-2 Illustrate of logic gate. (a) OR gate (b) AND gate (c) NOR gate (d) NAND gate (e) XOR gate 9 Fig. 1-3 Previous work in scaling factor 10 Fig. 1-4(a) Three current degradation curves obtained from stress result 10 Fig. 1-4(b) Overlap curve 1 and curve 2 with fixed curve 1 to obtain S1 11 Fig. 1-4(c) Overlap curve 2 and curve 3 with fixed curve 2 to obtain S2 11 Fig. 1-5 Curve A and curve B reach the same degradation rate at different stress time. 12 Fig. 1-6 The relationship between 1/S and Vgd is plotted using log scale. 12 Fig. 1-7 Hot carrier injection and impact ionization 13 Fig. 1-8 TCAD simulation 13 Fig. 2-1 The structure of p-channel MOSFET 20 Fig. 2-2 The illustration of GIDL 20 Fig. 2-3(a) 3D complete view of Agilent B1500A semiconductor device parameter analyzer 21 Fig. 2-3(b) Front side of Agilent B1500A semiconductor device parameter analyzer 21 Fig. 2-3(c) Back side of Agilent B1500A semiconductor device parameter analyzer 22 Fig. 2-4 Shielding box 22 Fig. 2-5(a) Id-Vd curve of LV device 23 Fig. 2-5(b) Id-Vd curve of HV device 23 Fig. 2-6(a) Id-Vg curve of LV device 24 Fig. 2-6(b) Id-Vg curve of HV device 24 Fig. 2-7(a) Ib-Vg curve of LV device 25 Fig. 2-7(b) Ib-Vg curve of HV device 25 Fig. 2-8(a) Ig-Vg curve of LV device 26 Fig. 2-8(b) Ig-Vg curve of HV device 26 Fig. 3-1 Experiment flow 34 Fig. 3-2(a) Idlin degradation at different Vd for fixed Vg at Ig peak in LV device 34 Fig. 3-2(b) Vt shift at different Vd for fixed Vg at Ig peak in LV device 35 Fig. 3-3(a) The cutline of TCAD simulation 35 Fig. 3-3(b) I.I. rate at different Vd for fixed Vg at Ig peak in LV device 36 Fig. 3-3(c) y-Direction electric field at different Vd for fixed Vg at Ig peak in LV device 36 Fig. 3-4(a) Idlin degradation at different Vd for fixed Vg at Ib peak in LV device 37 Fig. 3-4(b) Vt shift at different Vd for fixed Vg at Ib peak in LV device 37 Fig. 3-5(a) I.I. rate at different Vd for fixed Vg at Ib peak in LV device 38 Fig. 3-5(b) y-Direction electric field at different Vd for fixed Vg at Ib peak in LV device 38 Fig. 3-6(a) Idlin degradation at different Vg at on-state, off-state and sub-threshold for fixed Vd in LV device 39 Fig. 3-6(b) Vt shift at different Vg at on-state, off-state and sub-threshold for fixed Vd in LV device 39 Fig. 3-7(a) I.I. rate at different Vg at on-state, off-state and sub-threshold for fixed Vd in LV device 40 Fig. 3-7(b) y-Direction electric field at different Vg at on-state, off-state and sub-threshold for fixed Vd in LV device 40 Fig. 3-8(a) Idlin degradation at different Vd for fixed Vg at Ig peak in HV device 41 Fig. 3-8(b) Vt shift at different Vd for fixed Vg at Ig peak in HV device 41 Fig. 3-9(a) I.I. rate at different Vd for fixed Vg at Ig peak in HV device 42 Fig. 3-9(b) y-Direction electric field at different Vd for fixed Vg at Ig peak in HV device 42 Fig. 3-10(a) Idlin degradation at different Vd for fixed Vg at Ib peak in HV device 43 Fig. 3-10(b) Vt shift at different Vd for fixed Vg at Ib peak in HV device 43 Fig. 3-11(a) I.I. rate at different Vd for fixed Vg at Ib peak in HV device 44 Fig. 3-11(b) y-Direction electric field at different Vd for fixed Vg at Ib peak in HV device 44 Fig. 3-12(a) Idlin degradation at different Vg at on-state, off-state and sub-threshold for fixed Vd in HV device 45 Fig. 3-12(b) Vt shift at different Vg at on-state, off-state and sub-threshold for fixed Vd in HV device 45 Fig. 3-13(a) I.I. rate at different Vg at on-state, off-state and sub-threshold for fixed Vd in HV device 46 Fig. 3-13(b) y-Direction electric field at different Vg at on-state, off-state and sub-threshold for fixed Vd in HV device 46 Fig. 4-1(a) The time evolution of Idlin degradation at different Vd for fixed Vg at Ig peak in LV device 56 Fig. 4-1(b) The universal curve at different Vd for fixed Vg at Ig peak in LV device 56 Fig. 4-2 The relationship between 1/S and Vgd is plotted using log scale. 57 Fig. 4-3 The comparison of the real lifetime of the device and the prediction lifetime of the lifetime equation 57 Fig. 4-4(a) The time evolution of Idlin degradation at different Vd for fixed Vg at Ib peak in LV device 58 Fig. 4-4(b) The universal curve at different Vd for fixed Vg at Ib peak in LV device 58 Fig. 4-5 The comparison of the real lifetime of the device and the prediction lifetime of the lifetime equation 59 Fig. 4-6(a) The time evolution of Idlin degradation at different Vg at on-state, off-state and sub-threshold for fixed Vd in LV device 60 Fig. 4-6(b) The universal curve at different Vg at on-state, off-state and sub-threshold for fixed Vd in LV device 60 Fig. 4-7 The comparison of the real lifetime of the device and the prediction lifetime of the lifetime equation 61 Fig. 4-8 Gate current over channel current Ig/Is versus y-direction electric field Vgd as Vg varies 61 Fig. 4-9(a) The time evolution of Idlin degradation at different Vd for fixed Vg at Ig peak in HV device 62 Fig. 4-9(b) The universal curve at different Vd for fixed Vg at Ig peak in HV device 62 Fig. 4-10 The relationship between 1/S and Vgd is plotted using log scale. 63 Fig. 4-11 The comparison of the real lifetime of the device and the prediction lifetime of the lifetime equation 63 Fig. 4-12(a) The time evolution of Idlin degradation at different Vd for fixed Vg at Ib peak in HV device 64 Fig. 4-12(b) The universal curve at different Vd for fixed Vg at Ib peak in HV device 64 Fig. 4-13 The comparison of the real lifetime of the device and the prediction lifetime of the lifetime equation 65 Fig. 4-14(a) The time evolution of Idlin degradation at different Vg at on-state, off-state and sub-threshold for fixed Vd in HV device 66 Fig. 4-14(b) The universal curve at different Vg at on-state, off-state and sub-threshold for fixed Vd in HV device 66 Fig. 4-15 The comparison of the real lifetime of the device and the prediction lifetime of the lifetime equation 67 Fig. 4-16 Gate current over channel current Ig/Is versus y-direction electric field Vgd as Vg varies 67 Fig. 4-17(a) Universal curve of LV device 68 Fig. 4-17(b) Universal curve of HV device 68

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