氮化鎵為一寬能隙且直接能隙的半導體材料，其能隙3.43 eV，其主要應用於發光二極體、雷射光源、高功率電晶體和高電子遷移率電晶體。在此研究中，利用電漿輔助化學沈積法製備氮化銦鎵奈米線與氮化鎵發光元件。
此研究內容分為兩部分，第一部分以VLS成長機制利用金觸媒於700℃成長氮化銦鎵奈米線。氣相中微量銦蒸氣存在時，只可合成具有大量缺陷的氮化鎵奈米線；當處於高銦蒸氣壓氣相環境下，可合成出氮化銦鎵奈米線，其內部銦之含量可達14%可激發出高強度417 nm波長光。依據勒沙特列原理，提高氣相中氮電漿濃度，可增加氮化銦熱穩定性，從而提高氮化銦鎵內部銦含量達到25%，可激發460 nm光源。第二部分為單晶氮化鎵奈米柱發光元件製備。先於高溫960℃成長高品質n型氮化鎵，而後分別利用氯氣輔助低溫磊晶成長氮化銦鎵與p型氮化鎵，形成p-n氮化鎵發光元件結構。電性量測可知元件起始電壓3.7 V具有整流特性，逆向偏壓下無漏電現象。氣相中含微量氫氣可使氮化銦鎵磊晶層表面平坦化並抑制氮化銦鎵與氮化鋁鎵的多晶結構形成單晶磊晶層，可降低缺陷濃度、提高元件發光效率。

This research is involving of two parts. First part is that Au-assisted growths of InGaN nanowires by VLS growth mechanism at 700℃. GaN nanowires with a mount of planar defects were synthesized as low indium vapor pressure in the gas phase. As the high indium vapor pressure in the gas phase, there are InGaN nanowires with 14% atomic indium and high-intensity wavelength emission at 410 nm grown on Si(100). According to Le Chatelier's Principle, in order to enhance the thermal stability of InN material at the high temperature, the high nitrogen plasma concentration has used. Therefore, the indium content in InGaN nanowires with 460 nm emission light increases to 24% atomic. Other part is the single crystal GaN nanorods grown for Optoelectronic devices. In advance, at 960℃ growth temperature, high-quality Si-doped n-GaN nanorods were synthesized. Cl2-assisted InGaN and p-GaN epitaxial films were respectively grown on n-GaN nanorods at 600℃ to form p-i-n GaN for Optoelectronic structure.

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