本論文中吾人研究不同蝕刻技術應用在高功率元件的砷化鎵基板穿孔製程上及增強型假晶高電子移動率電晶體的選擇性蝕刻製程，並針對其製程的不同對這些技術分別作最佳化的調整。
首先吾人提出兩階段技術應用在高功率元件的穿孔製程上。使用這個兩階段技術可得到較平滑且較有斜度的結果，使金屬較易附著於斜坡上而不致於產生斷路影響特性。在增強型假晶高電子移動率電晶體的選擇性蝕刻製程上吾人則採用新的混合氣體及研究使用不會傷害二維通道最佳參數。

　　另外也利用蝕刻技術研製高品質因素空氣柱電感器以供射頻電路使用。本論文設計(1)新型結構增加空氣柱螺旋電感器的支撐力及利用鍍鎳步驟解決銅導線電感器去除介電材料後在空氣中會氧化而降低品質因素的缺點(2)立體式空氣柱線圈結構電感器，立體式減少電感器面積，空氣柱則可減少寄生效應而使Q值更高並降低成本。

　In this dissertation, we report the study of novel etching technologies for via-hole process of power devices and selective etching in enhancement mode pseudomorphic high electron mobility transistor (E-PHEMT). On the other hand, CMOS compatible high Q air gap inductors structures were developed with special etching recipe.

　Firstly, a two step etching recipe use for via hole etching has been developed. With the recipe, a sloped and smooth profile in via hole can be obtained for monolithic microwave integrated circuits (MMICs) and power FET applications. Next, we developed an optimum RIE technology with good selectivity and without damaging 2-D channel for E-PHEMT applications.

　Furthermore, a novel etching solution was developed to prepare deep sub-micron high Q suspended spiral on chip inductors with copper wires capped by electroless Ni plating. Additionally, a Si3N4/SiO2 X-beam was designed to increase the mechanic strength of the inductor in air gap. The enhancement of maximum mechanical strength (MMS) of the spiral inductor with X-beams is more than 4500 times.
Finally, we applied the developed novel etching solutions to the air gap inductor with laterally laid out solenoid structure. The structure can save a lots of chip area and obtains high Q value with the air gap.

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