鍺量子點不僅在光電元件上極具發展的潛力，尤其在物理特性上也呈現出高度的量子效應，例如發光機制與奈米元件的操作。藉由選擇性氧化，可以製作鍺量子點埋藏於SiO2熱氧化層中的結構，而介於量子點間的熱氧化層在物理上相當於一個理想位能障，進而使光子或電子有更多不同於塊材的躍遷行為。

本論文主旨在於探討量子點的成長與物理特性分析，實驗上利用NDL ( National Nano Device Laboratories )的超高真空化學氣相沈積系統成長超薄的矽鍺合金薄膜，接著控制不同的熱氧化條件以生成鍺量子點，最後則利用高解析電子顯微鏡技術觀察量子點的空間分佈與結構鑑定。在物理性質分析上也觀察到鍺量子造成的量子侷限效應(Quantum confinement effect)。光性方面，由陰極激發光譜(CL)解析可以發現量子侷限所造成的藍移現象。電性方面，本篇論文嘗試利用電子束微影技術和熱蒸鍍製程製作金電極於鍺量子點試片上，藉由二點量測結果發現電流-電壓圖(I-V curve)的非線性曲線和阻斷平台。

Not only are Ge quantum dots provided with the developmental potential in optical or electrical device, particularly, it presents relatively high quantum effect on physical properties as well, such as the operation of luminescence mechanism and nano-device. By means of selective oxidation, we can create the structure of Ge quantum dots embedded in the SiO2 thermal oxide layer. Furthermore, the thermal oxide layer lying between each two quantum dots is in physics equivalent to an ideal potential barrier. Contrary to bulk, an ideal potential barrier allows photons and electrons to be more active.

The purpose of this paper primarily discusses the growth of quantum dots and analyzes physical characteristics. In the process of our experiment, firstly, we utilize UHV-CVD system which is available in NDL (National Nano Device Laboratories) to produce the ultra-thin Si1-xGex alloy film. Secondly, we control various thermal oxide conditions to create Ge quantum dots. Finally, we adopt HRTEM technology to observe the spatial distribution and the structural identification of quantum dots. We also perceive in physical characteristics the Quantum confinement effect caused by Ge quantum dots. In conclusion, as for the optical characteristics, we could discover the blue shift phenomenon brought about via the analysis of CL. On the other hand, in electrical characteristics, we attempt to conduct Electron Beam Lithography(EBL) and thermal evaporation process making Au electrodes on the samples of quantum dots. In the end, we find non-liner relation and blockade of I-V curve through the two point contact measurement.

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