本研究係將鈀微粒以電泳法在磷化銦摻雜磊晶膜之基材上沈積鈀膜，以製備鈀蕭特基二極體作為氫氣感測器。論文首先探討電泳法之析鍍變因如何對於鈀膜微結構，及元件電性特性之影響。其次，針對氫氣濃度在50ppm-1%及溫度313K之操作範圍內，探討以鈀/磷化銦( Pd/InP，簡稱MS元件)以及鈀/氧化層/磷化銦( Pd/oxide/InP，簡稱MOS元件)之氫氣感測性能。文中並假設氫氣在元件上之吸附行為可由Temkin模式來描述及暫態響應之分析，可求出氫氣吸附之熱力學以及動力學參數。
研究結果顯示，隨電泳時間之增長，鈀膜粒徑變大，且粒徑分佈變寬。當電泳時間分別為1,、2、 3h時，三元件(30V-1, 30V-2, 30V-3)所得蕭特基能障值(約650meV)皆很接近，但由於鈀膜表面30V-1元件閘極能提供的有效面積最大，故其感測靈敏度最佳。另外，當電泳之施加電壓由10V提高至20V時，氫氣感測靈敏度提升，但若繼續增加電壓至30V時，感測的靈敏度反而下降。進一步觀察鈀膜表面型態發現，當電泳電壓由10V提升至20V時，鈀膜緻密性提高，故表面可提供氫氣吸附之活性座數目增加; 但當電壓繼續提升到30V時，因為鈀膜粒徑變大，造成活性座數目減少，導致氫氣感測性能變差。由此可知，選擇適當的電泳電壓及沈積時間，可獲得最佳性能感測元件。由吸附分析結果可估算出10V-2，20V-2及30V-2三元件鈀膜之表面活性座數目分別為6.6x1013、3.3x1014、9.8x1013，其中以20V-2為最多，此與實驗結果相吻合。在暫態分析方面，發現氫氣在鈀膜表面上之吸附為一階反應，並求出各元件之活化能約為20.6 kJ mol-1。
另外，比較MS與MOS Pd/InP元件之氫氣感測結果，發現MOS元件因氧化層之存在，可有效防止鈀磷化銦化合物之形成及費米能階釘住效應，故MOS元件之感測靈敏度較高。但因本研究中MOS元件之氧化層厚度不足且不完全緻密，因此對氫氣靈敏度並無大幅提升。

In this study, the electrophoretic deposition (EPD) combining with Pd nanoparticles was employed to fabricate Pd/InP Schottky diodes as hydrogen sensors. Firstly, the effects of EPD variables including deposition time and applied voltage on the resulting surface morphologies and current-voltage (I-V) characteristics were investigated. Secondly, hydrogen sensing performances of the EPD Pd/InP (denoted as MS device) and Pd/oxide/InP (denoted as MOS device) were investigated under hydrogen concentrations of 50 ppm- 1% H2/air at 313 K. Assuming that the hydrogen sensing behavior could be described by the Temkin adsorption model, the thermodynamic and kinetic parameters were then estimated from the steady-state and transient detection analyses.
From experimental results, it revealed that as the deposition time increased, not only the particle size of deposited Pd increased but also the size distribution of Pd particles became broader. From I-V characteristics analyzed by using the thermionic emission model, it was found that the Schottky barrier heights (SBHs) in air for three devices, 30V-1(EPD at 30V for 1 h), 30V-2 (EPD at 30V for 2 h), and 30V-3(EPD at 30V for 3 h) were very close (about 650meV). Especially, the 30V-1 device exhibited the highest hydrogen sensitivity, attributing from the largest effective surface area. Besides, as increasing the EPD applied voltage from 10V to 20V, the hydrogen sensitivity increased, whereas it was contrast decreased as the applied voltage was raised to 30V. To further observe the surface morphologies of the Pd gates, it illustrated the Pd layer became denser as the EPD voltage increased from 10Vto 20V. It resulted in the increase of number of active sites available for hydrogen adsorption. However, as the EPD voltage increased to 30V, the Pd grains enlarged which would result in the decrease of the number of active sites and then lowering the sensing sensitivity. Accordingly, tuning an appropriate conditions in the EPD process including deposition time and applied voltage were really essential for achieve an excellent sensing device.
Furthermore, from results of Temkin model analyses, the numbers of adsorption sites for 10V-2, 20V-2, and 30V-2 devices were estimated as 6.6x1013, 3.3x1014, and 9.8x1013, respectively. It was noted that the 20V-2 device exhibited the highest sensitivity which showed a good agreement with that observed from the SEM observation. Moreover, from the results of transient detection, it revealed that the initial rate for hydrogen adsorption on the Pd surface obeyed first-order kinetic model, the activation energies for different studied devices were estimated around 20.6 kJ mol-1.
As compared with the MS device, the MOS device exhibited higher hydrogen sensing sensitivity. This was inferred that the existence of oxide interlayer could prevent the formation of Pd-InP compounds and eliminate the Fermi-level pinning effect. However, due to the short thickness and poor denseness of oxide layer, the MOS device fabricated in this work did not show a large enhancement in hydrogen sensitivity.

1. E. F. P. Vaz de Campos, “The integration of hydrogen technologies with the energy utilities,” Int. J. Hydrogen Energy 12, 847 (1987).
2. R. C. Weast, in Handbook of Chemistry and Physics (CRC, Cleveland, 1976), p. D-107.
3. T. M. Canh, “Biosnesors,” ch 1, London: Champman & Hall (1993).
4. L. Ristic, “Sensor technology and devices,” ch 1, Boston: Artech House (1994).
5. J. N. Zemel, B. Keramati, C. W. Spivak, and A. D’Amico, “Non-FET Chemical Sensors,” Sens. Actuators 1, 427 (1981).
6. G. Z. Sauerbrey, “Verwendung von Schwingquarsen zur Wängung dünner Schichten und zur Mikrowängung,” Z. Phys. 155, 206 (1959).
7. H. Wohltjen, “Mechanism of operation and design considerations for surface acoustic wave device vapour sensors,” Sens. Actuators, 5, 307 (1984).
8. H. Wohltjen, A. Snow, and D. Ballantine, “The selective detection of vapors using surface acoustic wave devices,” in Proceedings of the 1985 IEEE Ultrasonics Symposium (IEEE, San Francisco, 1985, p. 66.
9. K. I. Lundstrőm, “Hydrogen sensitive mos-structures Part 1: Principles and applications,” Sens and Actuators 1, 403 (1981).
10. K. I. Lundstrőm, “M. S. Shivaraman, and C. M. Svensson, “A hydrogen-sensitive Pd-gate MOS transistor,” J Appl. Phys., 46, 3876 (1975).
11. T. C. McGill, “Phenomenology of metal-semiconductor electrical barriers, “Phenomenology of metal-semiconductor electrical barriers,” J. Vac. Sci. Technol., 11, 935 (1974).
12. L. L. Tongson, B. E. Knox, T. E. Sullivan, and S. J. Fonash, “Comparative study of chemical and polarization characteristics of Pd/Si and Pd/SiOx/Si Schottky-barrier-type devices,” J. Appl. Phys., 50, 1535 (1979).
13. S. T. Pantelides, “The Physics of SiO2 and Its Interface,” New York: Pergamon (1978).
14. M. C. Petty, “Hydrogen-induced DLTS signal in Pd/normal-Si Schottky diodes,” Electron. Lett., 18, 314 (1982).
15. M. C. Petty, “Conduction mechanism in Pd/SiO2/n-Si Schottky diode hydrogen detectors, ” Solid-State Electron., 29, 89 (1986).
16. D. X. Dai and I Dvoli, “Experimental study of an interface reaction at the practical Pd/Si interface by XPS,” Vacuum, 46, 139 (1995).
17. K. Homma, T. Koike, S. Ando, K. Adachi, and M. Motohashi, “Interfacial reaction and silicide formation in Pd/a-Si:H layered films,” Electronics & Communication in Japan, Part II: Electronics, 80, 12 (1997).
18. K. Ito, “Hydrogen-sensitive Schottky-barrier diodes,” Surf. Sci., 86, 345 (1979).
19. M. C. Steele and B. A. MacIver, “Palladium/cadmium-sulfide Schottky diodes for hydrogen detection,” Appl. Phys. Lett., 47, 687 (1976).
20. N. Yamamoto, S. Tonomura, T. Matsuka and H. Tsubomura, “A study on a palladium-titanium oxide Schottky diode as a detector for gaseous components,” Surf. Sci., 92, 400 (1980).
21. H. Kobayashi, K. Kishimoto, and Y. Nakato, “Reactions of hydrogen at the interface of palladium-titanium dioxide Schottky diodes as hydrogen sensors, studied by workfunction and electrical characteristic measurements,” Surf. Sci., 306, 393 (1994).
22. H. Miyazaki, T. Hyodo, Y. Shimizu, M. Egashira, “Hydrogen-sensing properties of anodically oxidized TiO2 film sensors Effects of preparation and pretreatment conditions,” Sens. Actuators B, 108, 467 (2005).
23. Y. Shimizu, T. Hyodo, H. Miyazaki, “H2 sensing performance of anodically oxidized TiO2 thin film equipped with Pd electrode,” Sens. Actuators B, 121, 219 (2007).
24. L. M. Lechuga, A. Calle, D. Golmayo, P. Tejedor, and F. Briones, “A new hydrogen sensor based on Pt/GaAs Schottky diode,” Sens. Acurators B, 4, 515 (1991).
25. L. M. Lechuga, A. Calle, D. Golmayo, and F. Briones, “A new hydrogen sensor based on a Pt/GaAs Schottky diode,” J. Electrochem. Soc., 138, 159 (1991).
26. W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, and C. K. Wang, “Comparative hydrogen-sensing study of Pd/GaAs and InP MOS Schottky diodes,” Jpan. J. Appl. Phys., 40, 6254 (2001).
27. S. Y. Cheng, “A hydrogen sensitive Pd/GaAs Schottky diode sensor,” Mater. Chem. Phys., 78, 525 (2003).
28. A. Salehi, A. Nikfarjam, D. J. Kalantari, “Pd/porous-GaAs Schottky contact for hydrogen sensing application,” Sens. Acurators B, 113, 419 (2007).
29. B. B. Kuliev, B. Lalevic, M. Yousuf, and D. M. Safarov, “New hydrogen-sensitive metal-InP diode,” Sov. Phys. Semicond., 17, 875 (1983).
30. W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, C. Y. Chen, and K. H. Yu, “Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor,” IEEE Trans. Electron Devices, 48, 1938 (2001).
31. H. J. Pan, K. W. Lin, K. H. Yu, C. C. Cheng, K. B. Thei, W. C. Liu, and H. I. Chen, “Highly hydrogen-sensitive Pd/InP metal oxide-semiconductor Schottky diode hydrogen sensor,” Electron. Lett., 38, 1938 (2002).
32. L. Talazac, F. Barbarin, L. Mazet, and C. Varenne, “Improvement in sensitivity and selectivity of InP-based gas sensors pseudo- Schottky diodes with palladium metallizations,” IEEE Sens. J., 4, 45 (2004).
33. K. W. Lin, H. I. Chen, C. T. Lu, Y. Y. Tsai, H. M. Chuang, C. Y. Chen, and W .C. Liu, “A hydrogen sensing Pd/InGaP metal-semiconductor Schottky diode hydrogen sensor,” Semicond. Sci. Technol., 18, 615 (2003).
34. Y. Y. Tsai, K. W. Lin, H. I. Chen, C. T. Lu, H. M. Chuang , C. Y. Chen, and W. C. Liu, “Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes,” J. Vac. Sci. Technol. B, 21, 2471 (2003).
35. K. W. Lin, H. I. Chen, H. M. Chuang, C. Y. Chen, C. T. Lu, C. C. Cheng, and W. C. Liu, “Characteristics of Pd/InGaP Schottky diodes hydrogen sensors,” IEEE Sens. J., 4, 72 (2004).
36. Y. Y. Tsai, K. W. Lin, C. T. Lu, H. I. Chen, H. M. Chuang, C. Y. Chen, C. C. Chen, and W. C. Liu, “Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes,” IEEE Trans. Electron Devices, 50, 2532 (2003).
37. C. C. Chen, Y. Y. Tsai, K. W. Lin, H. I. Chen, C. T. Lu, and W. C. Liu, “Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diode,” Sens. Actuator B-Chem., 99, 425 (2004).
38. M. P. Sinha and S. Mahapatra, “Diffusion of Pd in GaAs,” Vacuum, 40, 239 (1990).
39. G. Stremsdoerfer, D. Nguyen, N. Jafferzic-Renault, J. T. Martin, and P. Clechet, “Contact reactions in Pd/n-GaAs junctions formed by palladium electroless deposition,” J. Electrochem. Soc., 140, 519 (1993).
40. T. S. Huang and J. G. Pang, “Thermal stability of the pd-Al alloy Schottky of contacts to n-GaAs,” Mater. Sci. Eng. B, 49, 144 (1997).
41. H. Iwakuro, S. Tamaki, D. H. Shen, Z. Lin, and T. Kuroda, “Interfacial reactions of Pd and Pd/Si on GaAs,” Phys. Status Solidi A-Appl. Res., 164, 757 (1997).
42. H. Iwakuro, T. Kuroda, D. H. Shen, and H. Yagi, “Interactions of thin films of Pd and Pd/Si on GaAs: An X-ray photoelectron spectroscopic study combined with a thermodynamic analysis,” J. Mater. Sci., 33, 379 (1998).
43. H. Y. Nie and Y. Nannichi, “Pd-on GaAs Schottky contact: Its barrier height and response to hydrogen,” Jpan. J. Appl. Phys., 30, 906 (1991).
44. G. W. Hunter, P. G. Neudeck, L. Y. Chen, D. Knight, C. C. Liu, and O. H. Wu, “Silicon carbide-based detection of hydrogen and hydrocarbons,” Silicon carbide and related materials, 142, 817 (1996).
45. L. Y. Chen, G. W. Hunter, P. G. Neudeck, G. Bansal, J. B. Petit, and D. Knight, “Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors,” J. Vac. Sci. Technol. A, 15, 1228 (1997).
46. C. K. Kim, J. H. Lee, Y.H. Lee, N. I. Cho, D. J. Kim, and W. P. Kang, “Hydrogen sensing characteristics of Pd-SiC Schottky diode operating at high temperature,” J. Electron. Mater., 28, 202 (1999).
47. C. K. Kim, J. H. Lee, S. M. Choi, I. H. Noh, H. R. Kim, N. I. Cho, C. Hong, and G. E. Jang, “Pd- and Pt-SiC Schottky diodes for detection o H2 and CH4 at high temperature,” Sens, Actuator B-Chem., 77, 455 (2001).
48. F. Serina, K. Y. S. Ng, C. Huang, G. W. Auner, L. Rimai, and R. Naik, “Pd/AlN/SiC thin-film devices for selective hydrogen sensing,” J. Appl. Phys., 79, 3350 (2001).
49. S. Roy, C. Jacob, C. Lang, and S. Bassu, “Studies on Ru/3C-SiC Schottly junctions for high temperature hydrogen sensors,” J. Electrochem. Soc., 150, H135 (2003).
50. S. Roy, C. Jacob, C. Lang and S. Bassu, “Studies on Pd/3C-SiC Schottky junction hydrogen sensors at high temperature,” Sens. Actuator B-Chem., 94, 298 (2003).
51. B. P. Luther, S. D. Wolter, and S. E. Mohney, “High temperature Pt Schottly diode gas sensors on n-type GaN,” Sens. Actuator B-Chem., 56, 164 (1999).
52. J. Kim, F. Ren, B. P. Gila, C. Abernathy, and S. J. Pearton, “Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes,” J. Appl. Phys., 82, 739 (2003).
53. J. Kim, B. P. Gila, G. Y. Chung, C. R. Abernathy, S. J. Pearton, and F. Ren, “Hydrogen-sensitive GaN Schottly diodes,” Solid-state Electron., 47, 1069 (2003).
54. O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. L. Spetz, M. Stutzmann, and M. Eickhoff, “Influence of surface oxides on hydrogen-sensitive Pd : GaN Schottky diodes,” Appl. Phys. Lett., 83, 773 (2003).
55. M. Ali., V. Cimalla, V. Lebedev, H. Romanus, V. Tilak, D. Merfeld, P. Sandvik, and O. Ambacher, ”Pt/GaN Schottky diodes for hydrogen gas sensors,” Sens. Actuator B-Chem., 113, 797 (2006).
56. Y. M. Wong, W. P. Kang, J. L. Davidson, A. Wisitsora-at, and K. L. Soh, “A novel microelectronic gas sensor utilizing carbon nanotubes for hydrogen gas detection,” Sens. Actuator B-Chem., 93, 327 (2003).
57. R. C. Huges, “Hydrogen sensitive Schottky diodes with Pd/Ag alloys,” J. Electrochem. Soc., 31, C322 (1984).
58. L. M. Lechuga, A. Calle, D. Golmayo, P. Tejedor, and F. Briones, “A new Hydrogen sensor based on a Pt/GaAs Schottky diode,” J. Electrochem. Soc., 138, 159 (1991).
59. L. M. Lechuga, A. Calle, D. Golmayo, and F. Briones, “Hudrogen sensor based on a Pt/GaAs Schottky diode,” Sens. Actuator B-Chem., 4, 551 (1991).
60. A. Oriz, S. Lopez, J. C. Alonso, and S. Muhl, “Hydrogen-sensitive Ni-SiO2 a-Si-H Schottky diodes,” Thin Solid Films, 207, 279 (1992).
61. H. Nienhaus, H. S. Bergh, B. Gergen, A. Majumdar, W. H. Weinberg, and E. V. McFarland, “Ultrathin Cu fims on Si(111): Schottky barrier formation and sensor applications,” J. Vac. Sci. Technol. A, 17, 1683 (1999).
62. H. Nienhaus, H. S. Bergh, B. Gergen, A. Majumdar, W. H. Weinberg, and E. V. McFarland, “Selective H atom sensors using ultrathin Ag-Si Schottky diodes,” Appl. Phys. Lett., 74, 4046 (1999).
63. J. Liu, G. R. Oritz, Y. Zhang, H. Bakhru, and J. W. Corbett, “Effects of hydrogen on the barrier heigh of a titanium Schottky diode on p-type silicon,” Phys. Rev. B, 44, 8918 (1991).
64. S. X. Jin, L. P. Wang, M. H. Yuan, J. J. Chen, Y. Q. Jia, and G. G. Jia, “Effects of hudrogen on the Schottky-barrier of Ti/n-GaAs diodes,” J. Appl. Pys., 71, 539 (1992).
65. L. M. Lechuga, A. Calle, D. Golmayo, and F. Briones, “Different catalytic metals (Pt, Pd and Ir) for GaAs Schottky-barrier sensors,” Sens. Actuator. B-Chem., 7, 614 (1992).
66. Y. Q. Jia and G. G. Qin, “Effects of hydrogen on Al/P-Si Schottky diodes,” Appl. Phys. Lett., 56, 641 (1990).
67. D. E. Aspnes and A. Heller, “Barrier height and leakage reduction in n-GaAs-platinum group metal Schottky barriers upon exposure to hydrogen,” J.Vac. Sci. Technol. B, 1, 602 (1983).
68. D. Pavlidis, G. Zhao, S. Hubbard, and J. Schwank, “Improvement of CO sensitivity in GaN-based gas sensors, ” IEICE. T. Electron., E89-C, 1047 (2006).
69. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su and I Lindau: J. Vac. Sci Technol. 16, 1422, 1979.
70. V. Heine, “Theory of surface states,” Phy. Rev., 138, A1689 (1965).
71. J. Tersoff, “Schottky barrier heights and the continuum of gap states,” Phy. Rev. Lett., 52, 465 (1984).
72. H. Hasegawa and H. Ohno, “Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces,” J.Vac. Sci. Technol. B, 4, 1130 (1986).
73. J. M. Woodall and J. L. Freeouf, “GaAs metallization: Some problems and trends,” J.Vac. Sci. Technol., 19, 794 (1981).
74. Z. Q. Shi and W. A. Anderson, “MIS diode on n-InP having improved interface,” Solid-State Electron., 34, 285 (1991).
75. W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, S. Y. Cheng, and K. H. Yu, “Hydrogen- sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor,” IEEE Trans. Electron Devices, 48, 1938 (2001).
76. K. W. Lin, H. I. Chen, C. C. Cheng, H. M. Chuang, C. R. Lu, S. Y. Cheng K. H. Yu, and W. C. Liu, “Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen- sensing Schottky diode,” Sens. Acuators B, 94, 145 (2003).
77. W. C. Liu, K. W. Lin, H. I. Chen C. K. Wang, C. C. Cheng, S. Y. Cheng, and C. T. Lu, “A new Pt/oxdide/ In0.49Ga0.51P MOS Schottky diode hydrogen sensor,” IEEE Electron Device Lett., 23, 640 (2002).
78. C. R. Lu, K. W. Lin, H. I. Chen, H. M. Chuang, C. Y. Chen, and W. C. Liu, “A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor,” IEEE Electorn Device Lett., 24, 390 (2003).
79. W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, and C. K. Wang, “Comparative hydrogen sensing study of Pd/GaAs and Pd/InP metal–oxide-semiconductor Schottky diodes,” Jppn. J. Appl. Phys., 40, 6254 (2001).
80. G. Eftekhari, “Electrical characteristics of selenium-trated GaAs MIS Sxhottky diodes,” Semicond. Sci. Technol. 8, 409 (1993).
81. Z. Q. Shi, R. L. Wallace and W.A. Anderson, “High-barrier height Schottky diodes on N-InP by deposition on cooled substrates,” Appl. Phys. Lett., 59, 446 (1991).
82. Y. G. Wang and S. Ashok, ”Plasma passivation of gallium arsenide,” J.Vac. Sci. Technol. A, 11, 1094 (1993).
83. T. Kimura, H. Hasegawa, T. Sato and T. Hashizume, ”Sensing mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process,” Jpan. J. Appl. Phys., 45, 3414 (2006).
84. S. Uno, T. Hashizume, S. Kasai, N. J. Wu, and H. Hasegawa, “0.86 eV Platinum Schottky barrier on Indium Phosphide by in situ electrochemical process and its application to MESFET,” Jpn. J. Appl. Phys., 35, 1258 (1996).
85. H. I. Chen, C. K. Hsiung, Y. I. Chou, “Characterization of Pd-GaAs Schottky diodes prepared by the electroless plating technique,” Semicond. Sci. Technol., 18, 620 (2003).
86. H. I. Chen, Y. I. Chou, and C. Y. Chu, “A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating,” Sens. Acurators B, 85, 10 (2002).
87. H. I. Chen and Y. I. Chou, “A comparative study of hydrogen sensing performances between electroless plated and thermal evaporated Pd/InP Schottky diode,” Semicond. Sci. Technol., 18, 104 (2003).
88. 熊健剛，無電鍍鈀/砷化鎵式氫氣感測器之製備及氫氣感測研究，國立成功大學化學工程學系碩士論文 (2003).
89. Y. I. Chou, C M Chen, W. C. Liu, “A New Pd-InP Schottky Hydrogen Sensor Fabricated by Electrophoretic Deposition With Pd Nanoparticles,” IEEE Electron Device Lett., 26, 62 (2005).
90. 周彥伊，鈀/磷化銦蕭特基二極體氫氣感測器之製備、特性分析及感測研究，國立成功大學化學工程學系博士論文 (2005)
91. H. C. Hamaker, E. J. W. Verwey “Rolle der Krfifte zwisehen den Teilchen beim elek-. trischen Niederschlag und anderen Phinomenen,” Trans. Farad. Soc. 36 180 (1940)
92. H. Koelmans and J. Th. G. Overbeek, “Stability and Electrophoretic Deposition of Suspensions in Non-aqueous Media,’’ Discuss. Faraday Soc., 18, 52 (1954).
93. H. Koelmans, “Suspension in Non-Aqueous Media,’’ Philips Res. Rep., 10, 161 (1955).
94. F. Grillon, D. Fayeulle, M. Jeandin, “Quantitative image analysis of electrophoretic coatings,” J. Mater. Sci. Lett. 11, 272 (1992).
95. P. Sharkar, P. S. Nicholson, “Electrophoretic Deposition (EPD): Mechanisms, Kinetics, and Application to Ceramics,”J. Am. Ceram. Soc., 79, 1987 (1996).
96. H. C. Hamaker, E. J. W. Verwey, “Part II.—(C) Colloid stability. The role of the forces between the particles in electrodeposition and other phenomena,” Trans. Farad. Soc., 35, 180 (1940).
97. B. L. Sharma, Metal-semiconductor Schottky barrier junctions and their applications, Plenum, New York (1984).
98. D. A. Neamen, Semiconductor Physics and Devices, Irwin, Boston (1997).
99. M. Eriksson and L. G. Ekedahl, “Hydrogen adsorption states at the Pd/SiO2 interface and simulation of the response of a Pd metal-oxide-semiconductor hydrogen sensor,” J. Appl. Phys., 83, 3947 (1998).
100. W. P. Kang and Y. Gürbüz, “Comparison and analysis of Pd- and Pt-GaAs Schottky diodes hydrogen detection,” J. Appl. Phys., 75, 8175 (1994).
101. R. J. Silbey and R. A. Alberty, Physical Chemistry, 1ed. Wiley, New York (2001).
102. Z. Q. Shi and W. A. Anderson, “Nearly ideal Schottky contacts of n-InP,” in proceedings of the Third Int Conf Indium Phosphide Relat Mater, Cardiff, Wales, UK, 535 (1991).
103. Z. Q. Shi, R. L. Wallace and W. A. Anderson, “High-barrier height Schottky diodes on n-InP by deposition on cooled substrates,” Appl. Phys. Lett., 59(4), 446 (1991).
104. H. Hasegawa, “Fermi level pinning and Schottky barrier height control at metal-semiconductor interface of InP and related materials,” Jpn. J. Appl. Phys., Part 1, 38, 1098 (1999).