CaCu3Ti4O12是一種具有很高的介電常數及對溫度變化敏感度低(100~400K)的介電材料。本研究的目的在於探討摻雜Ni和共摻雜(Ni, Si)對於CaCu3Ti4O12的介電常數及顯微結構之影響。實驗結果發現摻雜Ni及共摻雜(Ni, Si)的含量愈高，整體的電阻率下降；其介電常數也會降低。但以實驗結果來看，共摻雜(Ni, Si)仍能提升純CaCu3Ti4O12的介電常數，且效果亦較純粹摻雜Ni來得理想。

CaCu3Ti4O12 is a remarkable dielectric material which exhibits a large dielectric constant and its dielectric constant is weakly sensitive to temperature range 100~400K. The purpose of this research is try to discuss effects to the dielectric constant and microstructure of CaCu3Ti4O12 by Ni doping and (Ni, Si) co-doping. According to the result, if the quantity of Ni doping or (Ni, Si) co-doping increases, the whole resistivity decreases, also the dielectric constant. But actually speaking, (Ni, Si) co-doping still enhances the dielectric constant larger than pure CaCu3Ti4O12, and more effective than Ni doping.

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