本實驗利用直流和射頻系統交互濺鍍(co-sputter)的方法，針對同為III族的硼和鎵元素分別摻雜於氧化鋅薄膜之中濺鍍於氧化鋁(sapphire)基板上，形成氧化鋅硼(BZO)和氧化鋅鎵(GZO)的透明導電薄膜，在氮氣的環境
下不同溫度適當熱處理，利用霍爾量測(Hall measurement)得其電特性、x-ray繞射(XRD)觀察晶體結構、掃描式電子顯微鏡(SEM)觀察表面形態、紫外光/
可見光分光光譜儀(UV/VIS spectrophotometer)量測穿透特性、X 光電子能譜儀(XPS)分析元素含量、光激發螢光(PL)觀察薄膜品質，將量測所得的結果加以分析討論及驗証。
再利用光、電特性俱佳的氧化鋅鎵透明導電薄膜應用於氮化鎵材料上製作蕭特基二極體的光偵測器(photodetector)，分別量測元件的蕭特基能障高度、暗電流(dark current)、照光光電流(photo current)及光響應度(responsivity)大小，此外在薄膜與氮化鎵之間多加了一層低溫成長氮化鎵(LTG-GaN)材料成功的抑制漏電流也提升了蕭特基能障高度，增加元件的可靠度。

In this study, undoped ZnO and boron-doped ZnO(BZO) films were deposited on sapphire by means of an magnetron sputtering method. The BZO
films were prepared by cosputtering of ZnO and B2O3 targets. The as-deposited ZnO films exhibited a high-resistivity property. The BZO thin films were then thermally annealed in nitrogen ambient to achieve the high-transparency andlow-resistivity TCO thin films. After thermal annealing, the resistivities of the
GZO films were further reduced at least two orders of magnitude reaching to ~10-3 Ω-cm. This could be attributed to the fact that the reduction of resistivity in annealed BZO films is not solely due to the increase of oxygen vacancy concentration but is also due to the increase of mobility, which is attributable to
the increase of grain size after thermal annealing. In contrary to the undoped
samples( ZnO films ), a marked blueshift was observed in the transmittance spectra taken from the annealed BZO films indicating the Burstein-Moss effect involved in the transition.
In addition, we also demonstrated Ga-doped ZnO(GZO) as Schottky contacts on GaN films. Application of UV photodetector(PD) indicated that spectral responsivity shows a narrow bandpass characteristic ranging from 340 to
370 nm as the GaN films were caped with low-temperature-grown GaN layer having high resistivity. Decreased responsivity in the short-wavelength region (λ<340 nm) can be explained by the marked absorption of the GZO contact layer.
Additionally, our findings indicate that when the reverse biases were below 5 V, the dark currents were well below 1×10-11A as the GaN films were caped with low-temperature-grown(LTG) GaN layer having high resistivity. This dark
current is far less than that of samples without LTG cap layer.

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