本論文以金屬有機化學氣相沉積（MOCVD）製程中，鋁氮化物（AlN）薄膜於簡化水平式反應器內的成長行為為研究主題，並進行全面性的數值模擬分析。研究中特別著重於初始條件及反應參數對成長速率與均勻性的影響。
本研究建立一套三維簡化模型並匯入 CFD 軟體，以模擬傳輸、熱傳與化學反應等主導 AlN 在矽基板上沉積的相關物理現象。模擬流程以逐步方式構建，依序加入熱邊界條件，以及包含氣相反應與表面反應之 Arrhenius 型反應機制。
載氣（N2）與前驅物（NH3、TMAl）自三個不同入口注入，並調變關鍵製程參數，包括旋轉速率、V/III 比、反應器壓力及溫度，以探討其對最終成長速率與均勻性的影響，並與可靠文獻中的成長速率進行比較。同時亦進行網格獨立性分析，以確保每一階段數值結果的有效性。
最後，針對各項參數的變化結果進行比較，以找出適合 AlN 沉積的最佳操作條件，並說明成長速率與均勻性之間的權衡關係。

This thesis presents a comprehensive computational study of aluminum nitride (AlN) thin film growth using metal-organic chemical vapor deposition (MOCVD) process inside a simplified horizontal reactor.
A particular emphasize will be made on the initial conditions’ and reactions’ parameters influence on the growth rate and uniformity.
A 3D simplified model was developped and imported into a CFD software to simulate the impact of transport, thermal and chemical phenomena governing AlN deposition on Silicon (Si) wafer.
This simulation workflows is built step by step, progressively including thermal conditions, and Arrhenius-type reaction mechanism for both gas-phase and surface reactions.
Gas carrier (N2) and precursors (NH3, TMAl) are injected through 3 different inlets and key process parameters including rotation rate, V/III ratio, reactor pressure and temperature are varied to investigate their influence on the final growth rate and uniformity, which will be compared to different reliable literature’s rates. Grid independence studies will be conducted to ensure validity of numerical results at every step of the process.
The results for each varying parameter are then compared to determine the optimal conditions for the desired deposition to occur and highlight the trade-offs between growth rate and uniformity.

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