隨著現今科技的快速發展與人們對於生活環境的要求，物聯網此一科技概念逐漸成為重視，物聯網依照其概念可分成三個層級:應用層、網路層與感測層，透過感測層在感測端對大量的感測元件針對不同的場景進行感知與監控蒐集資訊，並透過網路層進行傳輸管理，進而在應用層之應用端執行智慧遙控如遠端醫療、交通管制…等多項應用。因此物聯網中的感測器占有極重要的角色，堪稱為物聯網中的核心技術。所謂的感測器在細分結構的情況下又可分為:電力供應元件、感測元件與無線射頻元件等。本論文針對氣體感測的架構分別進行相關技術的研究。
第一部份，本論文針對氣體感測元件提出利用陽極氧化鋁模板製備金奈米柱作為硫化氣體的感測。陽極氧化鋁模板具備高密度、高比表面積(Specific surface area)與高規則性孔洞。利用此模板特性可輔以電化學沉積技術製備高比表面積之金奈米柱，具有相較於金薄膜高靈敏度之氣體感測。我們亦透過過氧化氫溶液對陽極氧化鋁模板進行表面改質並於金電鍍液中加入二甲基亞砜(DMSO) 進行濃稠度改質以及調變電鍍液之酸鹼值。透過此一優化製程所製備出的金奈米柱具有(111)優選取向之類單晶結構。而利用此金奈米柱進行甲基硫醇氣體感測易得到高靈敏性與高選擇性的感測結果。
第二部份，我們利用AZO/Si異質皆面特性製作高崩潰電壓與低漏電流之蕭特基二極體。我們利用氫電漿於矽基板上進行轟擊以減少矽基板上之懸浮鍵，並透過調變AZO之製程參數得到高導電性之AZO薄膜。透過氫電漿的處裡可以有效減少矽與AZO薄膜間的缺陷，從而減少介面上之載子缺陷複合中心。接著我們利用保護環的結構與快速熱退火來增加AZO/Si 二極體之崩潰電壓並減少其漏電流路徑。我們成功製作出高崩潰電壓(>200V)與低漏電流密度(<75μA/mm2)之蕭特基二極體。此一低漏電流密度之二極體為適合運用於低功率消耗的電力元件。
第三部份，本論文針對RF 射頻元件相關技術進行研究，我們運用壓電材料之表面聲波特性，提出一快速模擬表面聲波諧振器、階梯式表面聲波濾波器和雙工器的模擬方法。此雙工器之模擬操作頻段Tx為824-849(MH)而Rx為869-894(MHz)，透過表面聲波濾波器的模擬，我們得到階梯式表面聲波濾波器具有比雙模態濾波器低的插入損耗、高的功率耐受度與寬的頻寬。因此，透過此以階梯式濾波器的模擬，調變其串聯諧振器與並聯諧振器之共振頻率與頻寬，再經過多階的串聯後可以得到具有以下優異特性之雙工器模擬:1.通帯中低差入損耗 2.拒帶中快速衰減之高插入損耗 3.傳輸與接收端高隔離度。

With the rapidly develop of technology and the requirement to the environment, the conception of Internet of Thing (IoT) has been emphasized by industry and academic. The conception of IoT can be divided in three level: application layer, network layer, and sensor layer. The multi sensors in the sensor layer collect and monitor the information under different environment. The collected information are transmit through the network layer to the application layer for the request such as remote medical care, traffic control…etc. Therefore, the sensor is the core technic of the IoT network. The basic sensor structure are composed of power supply unit, sensor unit, and wireless radio frequency unit. In the dissertation, we focused on the research and discussion of technic relative to the three part.
In the sensor unit section, we mentioned the Au nanorod sulfide gas sensor fabricated by the Anodic Aluminum Oxide template (AAO). AAO template exhibits the outstanding characteristic of high surface density, high specific surface area, and high regularity pore for the nanomaterial fabrication. The Au nanorod synthesized with the aid of AAO template by electro deposition process has a higher sensitivity than the thin film structure for the gas sensing due to the high regularity and high specific surface. We also optimized the electro deposition process by the AAO template surface modification under H2O2 solution. The electrolyte was also modulated with the DMSO additive and pH value. The optimized electro process improve the crystal characteristic of the Au nanorod which exhibit the single crystal structure of (111) orientation peak. The single phase Au nanorod has a high sensitivity and selectivity to the sulfide gas.
In the second part, we discuss the Schottky barrier diode in the boost circuit. We develop the AZO/Si schottky barrier diode with high breakdown voltage and low leakage current property. We enhance the electric conductivity of the AZO thin film by modulating the process parameter. We also applied the Hydrogen plasma bombard to reduce the dangling bonds on the surface of Si substrate. In order to reduce the leakage current pathway and increase the reverse breakdown voltage, we adding the guard ring structure at the side of the AZO/Si diode. The structure of schottky diode has an excellent electric properties of >200V breakdown voltage and <75μA/mm2 which can be applied on the low power consumption power unit.
In the third part, we discuss the radio frequency unit of surface acoustic wave duplexer. We propose the rapid simulation of the surface acoustic wave resonator, ladder type filter, and duplexer with the piezoelectric material LiTaO3. The ladder type filter was composed with the serial and parallel arrangement of the SAW resonator. With the simulation of SAW filter, the duplexer composed with ladder type structure filter possesses a lower insertion loss, wider passband bandwidth, and higher power durability than the duplexer composed with double mode saw (DMS). Through the ladder type SAW filter simulation, the passband bandwidth and the insertion loss of the duplexer can be obtain by the modulation of the serial and parallel resonators’ resonate frequency. We can obtain a duplexer (Tx 824-849 MHz and Rx 869-894 MHz) with the low insertion loss at pass band, steep cutoff at rejection band, and high isolation between Tx-Rx.

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