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研究生： 楊舒涵
Yang, Shu-Han
論文名稱： 成長核殼式氮化鎵/氮化銦鎵奈米柱於發光二極體元件之應用
Growth of Core-Shell Gallium Nitride/ Indium Gallium Nitride Nanorods for Light-Emitting Diode Applications
指導教授： 陳進成
Chen, Chin-Cheng
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2017
畢業學年度： 105
語文別： 中文
論文頁數： 110
中文關鍵詞： 電漿輔助化學氣相沉積 、氮化鎵 、氮化銦鎵 、氮化鋁鎵 、奈米柱 、核殼式結構 、p-n接面 、單一量子井 、發光二極體 、電致發光
外文關鍵詞： plasma-enhanced chemical vapor deposition, gallium nitride, Indium Gallium Nitride, Aluminium Gallium Nitride, nanorods, core-shell structure, p-n junction, single-quantum-well, light-emitting diodes, electroluminescence
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    • 由於氮化鎵具有極佳之光電材料特性，已廣泛應用於發光二極體、雷射二極體、太陽能電池以及高功率電晶體。一維奈米結構具有高深寬比與高比表面積之特性，能改善氮化鎵晶體與基板之間不匹配性，本研究採用自行開發之爐管型電漿輔助化學氣相沉積設備成長一維氮化鎵奈米柱，來製備具高發光效率且低成本之發光二極體元件。然而一維氮化鎵奈米柱具高比表面積導致高表面缺陷及影響發光效率。本研究以核殼式結構成長氮化鎵奈米柱，並在p-n接面中成長氮化銦鎵，作為主動層以增加發光效率及改善前述問題。
    本研究成功地在p+ Si(100)基板上，成長出垂直於基板表面之高品質氮化鎵奈米柱，藉由調控氮化鎂之載流氣體流量，觀察光致螢光光譜之訊號以控制p型氮化鎵之摻雜濃度及微調晶體品質。並藉由控制氮電漿功率及降低反應壓力在p型氮化鎵奈米柱上成長出ｎ型氮化鎵核殼式結構。將此氮化鎵奈米柱製成發光二極體，其電流-電壓圖顯示出整流特性，證實有p-n接面之存在，在電流密度為700mA/ mm2至3000 mA/ mm2有電致發光現象，其顏色為紫光，但量測燒毀後其二極體特性消失。
    為改善在高驅動電壓與電流下才能電致發光情形，本研究進一步在p-n接面中成長氮化銦鎵，以形成量子井侷限電子與電洞在此層，作為主動層增加電子與電洞之復合機率。同時為避免在體積較小之單層量子井有載子溢流的情形，使載子脫離主動層，因此成長氮化鋁鎵作為電子阻擋層，製備了異質p-n接面氮化鎵奈米柱元件。由電流-電壓曲線證實有p-n接面存在。但可能因有漏電流之現象，串聯電阻過大，及異質p-n接面之缺陷較多而造成非輻射性復合，未能觀測到有電致發光之現象。

    Due to the significant optoelectronic property, Gallium nitride (GaN) is used for light emitting diodes (LEDs). In addition, 1-D nano-structure has the advantage of high aspect-ratio and high specific surface area, leading to improving the mismatch between GaN and the substrate. We fabricated GaN nano-rods for LED devices employing the self-developed PECVD system. In the study, the surface defect was lowered by fabricating the nano-rods with core-shell structure, and the recombination efficiency was enhanced by growing Indium Gallium Nitride (InGaN) as the active layer.
    The samples with p-n junction were packed into devices; its rectifying I-V curves confirmed the existence of p-n junction. Once the current density reached from 700mA/mm2 to 3000mA/mm2 , violet electroluminescence is observed. To solve the higher turn-on voltage and current, a layer of InGaN was grown between the p-n junction to form the quantum well. In addition, a layer of Aluminium Gallium Nitride (AlGaN) was grown as electron-blocking layer. The samples with single-quantum-well were made into devices. The rectifying I-V curves confirmed the existence of p-n junction, but the electroluminescence phenomena was not observed.

    摘要 I Extend Abstract III 誌謝 IX 目錄 X 表目錄 XIV 圖目錄 XV 第一章 緒論 1 1-1前言 1 1-2奈米材料 3 1-3研究動機 4 第二章 理論基礎與文獻回顧 7 2-1氮化鎵之特性 7 2-1-1氮化鎵之基本性質 8 2-1-2成長氮化鎵之基板 12 2-1-3 n型氮化鎵 15 2-1-4 p型氮化鎵 16 2-2 氮化銦鎵之基本性質 18 2-3 一維氮化鎵奈米結構之成長 22 2-3-1 自組裝成長氮化鎵奈米柱 23 2-4　p-n接面 26 2-4-1雙異質界面 29 2-5　電漿理論[42] 30 2-5-1　電漿定義與特性 30 2-5-2　電介質放電[42] 35 第三章 實驗步驟與方法 38 3-1 實驗流程 38 3-2　實驗設備 39 3-2-1　爐管型電漿輔助化學氣相沉積 39 3-2-2　三段加熱區間高溫爐 40 3-2-3　石英管反應腔體 41 3-2-4　氧化鋁材料 41 3-2-5　電漿電源供應器 41 3-2-6　抽氣及真空系統 41 3-2-7　壓力監控系統 42 3-2-8　流量控制系統 42 3-3　實驗材料 43 3-3-1　實驗氣體 43 3-3-2　基板材料 43 3-3-3　真空管件材料 43 3-3-4　化學藥品 44 3-3-5　金屬遮罩 44 3-4　實驗步驟 45 3-4-1　成長p-n接面核殼式氮化鎵奈米柱 45 3-4-1-1 基板前處理 45 3-4-1-2　以爐管型PECVD系統成長氮化鎵奈米柱 45 3-4-1-3　以爐管型PECVD系統成長p型氮化鎵奈米柱 47 3-4-1-4　製作基板保護層 48 3-4-1-5　以爐管型PECVD系統成長第二階段n型氮化鎵奈米柱 49 3-4-2 成長具單一量子井之氮化鎵奈米柱 50 3-4-2-1 基板前處理 50 3-4-2-2　以爐管型PECVD系統成長p型氮化鎵奈米柱 51 3-4-2-3　製作基板保護層 52 3-4-2-4　以爐管型PECVD系統成長氮化銦鎵晶體於p型氮化鎵上 52 3-4-2-5 以爐管型PECVD系統成長氮化鋁鎵晶體於氮化銦鎵上 54 3-4-2-6　以爐管型PECVD系統成長第二階段n型氮化鎵奈米柱 56 3-4-3　氮化鎵二極體元件製作 57 3-5　實驗分析 59 3-5-1　掃描式電子顯微鏡 59 3-5-2　 X光繞射分析儀 61 3-5-3光致螢光光譜儀 62 3-5-4　電性量測系統 63 第四章 結果與討論 64 4-1 氮化鎵奈米柱製作 64 4-1-1　成長低密度高品質本質氮化鎵奈米柱 64 4-1-2　成長p型氮化鎵於矽基板上 67 4-1-2-1 微調晶體品質 68 4-1-2-2 調控鎂摻雜濃度 72 4-1-3　兩階段成長n型氮化鎵奈米柱 76 4-2氮化鎵奈米柱製作發光二極體元件 84 4-2-1　以核殼式結構p-n接面氮化鎵奈米柱之發光二極體元件製作 84 4-2-2　核殼式p-n接面氮化鎵奈米柱之發光二極體元件電性量測 89 4-3異質結構之氮化鎵奈米柱製作發光二極體元件 91 4-3-1 異質p-n接面氮化鎵奈米柱之發光二極體元件製作 92 4-3-2　異質p-n接面氮化鎵奈米柱之發光二極體元件電性量測 101 第五章 結論與未來展望 104 5-1　結論 104 5-2　未來展望 106 第六章 參考文獻 107

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