石墨烯是具備良好的電、光、熱、磁、化以及機械性質，而此非常適合使用在研究新式的奈米元件。石墨烯具有很寬的吸收頻譜，但是其對於光資的吸收與轉換效率低弱。雖然石墨烯電子遷移率很好以擁有多關於電子元間的應用，但是微弱的光影響能讓石墨烯光學感測元件發展之路受到一定的限制。
本研究中的孔洞基板使用微波電漿輔助化學氣相沉積法在矽基板成長一層鑽石薄膜，而利用標準黃光微影程序定義圖形於鑽石薄膜基板，以氧電漿乾蝕刻系統來蝕刻鑽石，再使用氫氧化鉀蝕刻矽晶圓，而得到深約15-20 μm的孔洞和溝槽於鑽石薄膜基板。將準備好的孔洞和溝槽基板拿去鍍電極，使用蒸鍍機系統鍍鉻和金(Au/Cr)。此時，使用CVD熱化學氣相沉積法成長高品質連續薄膜石墨烯，將石墨烯轉移至孔洞和溝槽基板，並使用光學顯微鏡和Raman分析。
將製備好的元件於在高真空光學量測，使用不同的波長二極體雷射實驗，如:藍光(405nm)、紅光(660nm)、綠光(532nm)，並探討懸浮石墨烯的光導效應，於不同的偏壓和雷射光源的功率來分析石墨烯的光電導率效應。

In this work, ultrananocrystalline diamond film is used as a pattern technology to make a cavity on silicon substrate. The low surface tension solution and substrate placement was used to prevent the graphene broken when removing the supported layer. The suspended stacked graphene was successfully fabricated from 40um length channel. Optical Microscope, Raman Spectroscopy, Scanning Electron Microscope, Electrical measurement and Optical measurement are used to analyze the stacked graphene. In the optical measurement part, under blue, red and green laser illumination, it shows a positive photoconductivity. When applying low power, the number of photons of red laser is more than blue laser makes the photoconductivity of red laser is higher than blue laser. With increasing the power, the photoconductivity of blue laser will surpass the photoconductivity of red laser and the difference will be bigger because the red laser will saturate first.

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