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研究生： 周盈年
Chou, Ying-Nien
論文名稱： 氯化鐵於高分子發光元件之研究
Interfacial Modification of Anode with Iron Chloride in Polymer Light-Emitted Diode
指導教授： 溫添進
Wen, Ten-Chin
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2010
畢業學年度： 98
語文別： 中文
論文頁數： 97
中文關鍵詞： 氯化鐵 、高分子發光元件 、載子注入能障
外文關鍵詞： Iron chloride, PLED, hole injection barrier
相關次數： 點閱：105  下載：1 
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    • 此篇論文利用兩種不同的製程方式，分別組裝成PLED元件，皆在探討藉由不同的介面修飾方式可提升電洞注入的效能。
    第一個部分將FeCl3摻混進入PEDOT:PSS溶液中，藉由便利的溶液化製程，有效的提升了PEDOT:PSS的功函數，並得到良好的PLED元件效率。其效能的觀察包含藉由單一電洞元件推算電洞注入之能障，以及利用紫外光光電子光譜量測其表面的光電子能階變化，以換算表面的功函數。為解釋其摻混的效能，以XPS進行元素分析，最後藉由UV-visible-NIR吸收光譜證實了功函數的提升來自PEDOT氧化態的產生。
    第二個部分以FeCl3作為PLED元件的電洞注入層，發現其與ITO層相比，可以大幅的提升電洞注入效能，也使得元件亮度與發光效率大幅的提升。其原因來自於FeCl3所展現的高陰電性，而使ITO層的功函數產生改變，進而降低了ITO層與主動層HOMO之間的能障。此部分除了藉由單一電洞注入元件以及UPS推算能障與功函數之外，並利用XPS的元素分析，詳細的描述FeCl3層與ITO之間的作用。

    In this dissertation, two different materials was used as hole transporting materials in the polymer light-emitting device (PLED) which was expected to promote the hole injection ability. The investigations included two sections as
    follows.
    The first section reported the treatment of PEDOT:PSS as hole-injection layer (HIL) in PLED. FeCl3(Iron Chloride) was doped into PEDOT:PSS via solution process. And this blend layer was characterized in terms of UV-vis, ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS).
    The UPS spectra showed that PEDOT:PSS possessed more than 5.2 eV work function after inserting FeCl3 as a dopant. The electroluminescence efficiency of polymer light emitting diode using polyfluorene(PF) as an active layer and PEDOT:PSS: FeCl3 as HIL can be reached 7.0 cd/A, showing the slightly better performance than that using PEDOT:PSS as HIL. FeCl3 modified the ITO anode and fabricated PLED devices.
    The secondary section reported that FeCl3 used as hole injection layer modified on ITO anode and fabricated PLED devices. The electroluminescence efficiency of polymer light emitting diode can be reach 6.5 cd/A, which was closed to PEDOT:PSS performance. This characteristic was result to the work function promotion of the ITO surface, came from the high electronegtivity of FeCl3. Ultilizing the hole-only devices and UPS to estimate the hole injection barrier between ITO anode and the HOMO of poltfluorene. XPS was used to realize the element binding energy with the surface structure.

    中文摘要 i Abstract ii 誌謝 iii 目錄 iv 圖目錄 vii 表目錄 ix 符號及縮寫 x 第一章 序論 1 1-1有機電激發光元件簡介 1 1-1-1 前言 1 1-1-2 有機電激發光元件的起源 2 1-1-3 OLED與PLED的比較 4 1-1-4 高分子發光二極體之電致發光原理 7 1-1-6 有機電激發光元件結構 9 1-1-5.元件電流的限制 11 1-2 介面修飾層之分類與效能 13 1-2-1. 陽極與電洞修飾層材料 14 1-2-2 穩定金屬陰極之需求與現行技術 17 1-3 研究動機 21 第二章 摻混FeCl3與PEDOT:PSS於高分子發光元件之光電特性研究與應用 31 2-1 前言 31 2-2 實驗部分 32 2-2-1 藥品 32 2-2-2 PLED元件的組裝與量測 32 2-2-3 PEDOT:PSS混摻層結構鑑定與能階分析 36 2-2-4 PEDOT:PSS混摻層之表面結構分析 37 2-2-5 PEDOT:PSS混摻層之UV-visible吸收光譜分析 37 2-3 結果與討論 38 2-3-1 PEDOT:PSS摻混FeCl3薄層奈米薄層之表面型態分析 38 2-3-2 PEDOT:PSS摻混FeCl3薄層之元件分析 39 2-3-3 PEDOT:PSS摻混FeCl3薄層之hole-only元件分析 40 2-3-4 PEDOT:PSS摻混FeCl3薄層修飾於ITO之功函數變化 41 2-3-5 PEDOT:PSS摻混FeCl3薄層修飾於ITO之XPS元素分析 43 2-3-6 PEDOT:PSS摻混FeCl3薄層修飾於ITO之吸收光譜分析 44 2-4 結論 46 第三章 FeCl3修飾陽極ITO表面於高分子發光元件之製作與特性探討 60 3-1 前言 60 3-2實驗部分 61 3-2-1. 藥品部分 61 3-2-2. PLED元件的組裝與量測 61 3-2-3 FeCl3薄層之結構鑑定、能階分析與表面結構分析 62 3-3 結果與討論 63 3-3-1 FeCl3作為電洞注入層之PLED元件分析 63 3-3-2 FeCl3作為電洞注入層在不同溫度處理之PLED元件分析 64 3-3-3 FeCl3作為電洞注入層在不同溫度處理之hole-only元件分析 65 3-3-4 FeCl3作為電洞注入層在不同溫度處理之功函數分析 66 3-3-5 FeCl3作不同溫度處理之元素分析 67 3-3-6 FeCl3作不同溫度處理之表面型態分析 69 3-4 結論 70 第四章 總結與展望 87 參考文獻 89

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