摘要

石墨烯因為其獨特的電性、熱學和力學性質，是一個在科學和科技上的新興焦點。然而石墨烯家族通常置放在二氧化矽基板，發生在基板和石墨烯介面交接處的雜質會散射電子，嚴重影響我們去研究石墨烯的物理理論。雖然使用懸浮石墨烯技術和氮化硼基板可以改善這些問題，但是這些方法不適合大量生產，這也導致他們的應用性受到嚴重限制。基本上，單晶β相的氮化矽基板跟石墨烯晶格的高相容性類似於氮化硼提供的效果，且它展現於高於氮化硼的介電常數。在氮化矽上的石墨烯電性裝置或許是一種適合晶圓尺度的二維材料積體電路上之新結構。
在本篇論文裡，我們證明在沒有使用退火技術下，石墨烯的載子遷移率高於5000 cm^2⁄(v.s)。而整個量測結果上，我們記錄了石墨烯裝置的磁傳輸特性。

Abstract

Graphene is a rising star in both science and technology due to its unique electronic, thermal, and mechanical properties. However, graphene family is generally supported on silicon dioxide substrates; strong impurity scatterings at the interface obscure the study of the fundamental physics in graphene systems. Although suspending graphene and boron nitride [BN] as the substrate lead to a substantial improvement, these methods are unsuitable for massive production and thus their implications are severely limited. In principle, epitaxial monocrystalline β-silicon nitride [β-Si3N4] substrates match graphene lattice, which reduce interfacial strain like graphene/BN devices, and exhibit higher-κ dielectric constant than that on BN substrates. Graphene family on epitaxial β-Si3N4/Si substrates may be a promising structure in 2D-material integrated circuits on wafer scale.
Here, we demonstrate the carrier mobility of single-layer graphene/β-Si3N4 devices is higher than 5000 cm^2⁄(v.s) before using the annealing process. In our experimental result, we report on the characterization of magnetotransport measurements in the graphene’s devices.

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