本研究中，利用化學氣相沈積法置備氧化鋅奈米線，藉由不加入與加入催化劑-氯化亞錫，可得到兩種不同成長方向的鋅奈米線，一為[11-20]，一為[000-2] ，推測兩者成長機制分別為VS與VLS，而後者可能是由於錫原子的加入，導致(0002)面表面能的改變，使成長方向轉變成成[000-2]。由於鋅金屬非常容易氧化，因此奈米線外層會形成一層約十奈米的氧化鋅原生氧化層，進而得到鋅/氧化鋅一維異質奈米線。另外，還可再經由退火的方式改變氧化鋅殼層的厚度與型態，而退火的溫度是影響型態及氧化程度很重要的參數，甚於持溫時間。氧化後的鋅/氧化鋅一維異質奈米線，其CL光譜的能隙峰值會隨氧化程度的減少，而呈現藍移現象。由於surface-to-volume ratio 越大，則surface band emission會越明顯。另外，藉由FIB及E-beam lithography，可以將鋅奈米線製作成奈米元件，且測量出此元件在室溫時下，其IV-curve是成線性，隨著溫度降低越趨於非線性。推測高溫時與低溫時，電子所傳導的路徑是不相同的；高溫是經由氧化鋅的殼層及鋅的核作為傳導途徑；低溫時，電子不具備足夠能量可以穿透鋅與氧化鋅的Schottky barrier，所以只能藉由氧化鋅的殼層作VRH方式傳導。

In this research, Zinc nanowire can be fabricated by thermal chemical vapor deposition without and with catalyst-SnCl2. Two different growth directions of the nanowires are obtained, one is , and another is . They are supposed to be controlled by two growth mechanisms which are VS and VLS, respectively. The surface energy of plane may be changed by adding Tin atoms into the nanowires which were fabricated with catalysts. Because zinc is easily oxidized, the zinc nanowires will cover with 10nm oxidized layer naturally, and Zn/ZnO core-shell nanowires are formed. Besides, the mophology and thickness of zinc nanowires will be controlled by annealing in oxygen, and the most important parameter of annealing is temperature rather than time. In catholuminescence analysis, the near-band edge emission peak of the annealed nanowires blue-shifts from 387nm to 382nm, as the thickness of ZnO shell decreases, corresponds to the decease of annealing temperature. The surface band emission from the ZnO shell reveals obviously due to the increase of surface-to-volume ratio. In addition, the nanowire can be made into nano-device by FIB and E-beam lithography. The I-V curves of the device show the ohmic contact behavior at room temperature, and turn into non-liner as the temperature decreases. The electrons are supposed to conduct through ZnO shell and Zinc core at high temperature while those with not enough energy to overcome the Schottky barrier between Zinc and ZnO at low temperature conduct only through ZnO shell by VRH process.

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