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研究生： 李侑霖
Lee, Yu-Lin
論文名稱： 具有特定結構之氮化鎵系發光二極體之研製
Fabrication of GaN Based Light Emitting Diodes (LEDs) with Specific Structures
指導教授： 劉文超
Liu, Wen-Chau
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2018
畢業學年度： 106
語文別： 英文
論文頁數： 99
中文關鍵詞： 氮化鎵 、發光二極體 、微米孔洞陣列 、特殊邊牆 、微奈米球 、二 維條紋狀金屬 、感應耦合電漿離子 、快速對流沉積 、抗反射保護層 、電流 散佈
外文關鍵詞： GaN, light-emitting diodes, microhole array, textured sidewalls, micro-/nano- spheres, 2D-metal grid, inductively coupled plasma, rapid convection deposition, anti- reflection passivation layer, current spreading
相關次數： 點閱：92  下載：1 
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    • 在本論文中，為了改善氮化鎵系發光二極體之光萃取效率(light extraction efficiency)，吾人研製一系列具有微米孔洞陣列及特殊圖案化邊牆之複合結構式高品質氮化鎵系發光二極體。以此複合結構為主軸，進一步提出奈米材料應用及元件製程技術，其中包含利用快速對流沉積法(rapid convection deposition, RCD)製備混合式二氧化矽微奈米球抗反射保護層以及利用熱蒸鍍法(thermal evaporation)製備具有二維條紋狀銀金屬圖騰之氧化鋁鋅透明導電層(transparent conductive layer, TCL)，有效提升氮化鎵系發光二極體之光電轉換效率(wall-plug efficiency, WPE)。本研究對複合結構式氮化鎵系發光二極體之光電特性，及各種特定結構之製備方式皆有深入且詳細的研究及探討。
    首先，吾人利用感應耦合電漿離子(inductively coupled plasma, ICP)蝕刻製程，製備出具有微米孔洞陣列及特殊邊牆結構之氮化鎵系發光二極體，可在不影響電性特性之下，有效降低在氮化鎵/空氣介面之內部全反射(total internal reflection, TIR)，並增加光子散射(photons scattering)至元件外部的機會。相較於傳統平面式氮化鎵系發光二極體，在光輸出功率(light output power)、光通量(luminous flux)、光電轉換效率(wall-plug efficiency)及外部量子效率(external quantum efficiency)分別提升 20.9%、24.3%、20.5%及 21.3%。
    其次，延續前章，探討經由快速對流沉積法，塗佈混合式二氧化矽微
    奈米球抗反射保護層於具有微米孔洞陣列及特殊邊牆結構(45° sidewalls)之氮化鎵系發光二極體。在不影響順向電性特性下，有效抑制元件之逆向漏電流，並進一步提升元件表面粗糙度，使得光子有足夠的機會被導引至光逃離錐角(photon escape cones)，降低內部全反射效應。此外，二氧化矽保護層同時具備抗反射性質，抑制元件內部產生之 Fresnel 光損失(Fresnel loss)。相較於傳統平面式氮化鎵系發光二極體，在光輸出功率、光通量、光電轉換效率及外部量子效率分別提升 50.6%、50.9%、50.6%及49.9%。
    最後，延續前章之複合結構，結合二維條紋狀銀金屬圖騰之氧化鋁鋅
    透明導電層，形成具有多重特定結構之氮化鎵系發光二極體。藉此高導電
    率特性之銀金屬，提升電流散佈能力，避免電流侷限在金屬電極周圍，形
    成不良的電流擁擠效應。由於較低的串聯電阻，此條紋狀銀金屬層的應用
    對於降低元件順向導通電壓有明顯的助益，氧化鋁鋅/氮化鎵非歐姆接觸
    之特性亦被改善。此外，銀金屬對於輸出光的高吸收率(effect of light absorption)仍無可避免，因此在本章節中，附加的二氧化矽保護層用來改善此缺點，進一步提升元件之光性性能，同時抑制逆向漏電流。相較於傳統平面式氮化鎵系發光二極體，在光輸出功率、光通量、光電轉換效率及外部量子效率分別提升 33%、34.4%,、45.3%及 33.1%。本研究論文中所研製之高品質氮化鎵系發光二極體，皆可有效提升光電轉換效率，在商業應用上相當具有潛力。

    In this thesis, in order to enhance light extraction efficiency (LEE), GaN-based light-emitting diodes (LEDs) with microhole array and textured sidewalls, which act as the core devices, are fabricated and studied. Based on the core structures (microhole array + textured sidewalls), additional applications, including a hybrid SiO2 nanoparticle/microsphere (NP/MS) passivation layer via rapid convection deposition, and a two-dimension(2D) Ag grid/AZO transparent conductive layer (TCL) via thermal evaporation are proposed to further improve wall-plug efficiency (WPE) of the studied devices. The optical and electrical properties of these multi-structured GaN-based LEDs are studied and discussed in detail. In addition, the related fabrication processes of these specific structures are also explained clearly.
    First of all, GaN-based light-emitting diodes (LEDs) with a hybrid structure, including a microhole array and textured sidewalls (45° angle and convex patterns), were fabricated and studied. The use of this hybrid structure, formed using an inductively coupled plasma (ICP) etching approach, causes reduced total internal reflection (TIR) and increased scattering probability of photons at the GaN/air interface. The designed hybrid structure provides substantial improvements in optical performance without any degradation in electrical properties. For instance, as compared with a conventional LED, Device C with the hybrid structure (45° angle sidewalls) shows remarkable improvements of 20.9%, 24.3%, 20.5%, and 21.3% in light output power (LOP), luminous fluxes, external quantum efficiency (EQE), and wall-plug efficiency (WPE), respectively, under an injection current of 200 mA.
    The characteristics of GaN-based light emitting diodes (LEDs) with a hybrid structure, incorporating a microhole array, 45° sidewalls, and an appropriate SiO2 nanoparticle (NP)/microsphere (MS) passivation layer, were fabricated and studied. The use of an SiO2 NP/MS passivation layer, formed via RCD method, causes a remarkable reduction in reverse-biased leakage current. The employment of the hybrid structure leads to substantial enhancements in optical properties without any degradation in electrical performance. Experimentally, as compared with a conventional LED (Device A), Device E shows 50.6%, 50.9%, 50.6%, and 49.9% enhancements in light output power (LOP), luminous flux, external quantum efficiency (EQE), and wall-plug efficiency (WPE), respectively, under an injection current of 200 mA. These advantages are mainly attributed to the increased scattering probability and the opportunity to find photon escape cones as well as the reduced total internal reflection (TIR) and Fresnel reflection effects.
    Finally, GaN-based light emitting diodes (LEDs) with a multiple structure, incorporating a microhole array, 45° sidewalls, an SiO2 nanoparticle (NP)/microsphere (MS) passivation layer, and a two-dimension(2D) Ag grid/AZO transparent conductive layer (TCL), were fabricated and studied. The application of Ag metal grid structure provides lower forward voltage and better current spreading ability of studied devices, due to the reduced series resistance (Rs) and conductive Ag metal. These improved electrical properties imply that the poor contact behavior between AZO/p-GaN interface could be effectively alleviate. However, the employed Ag metal pattern causes unavoidable effect of light absorption. Based on this drawback, the appropriate SiO2 NP/MS anti-reflection layer further enhanced optical performance with a lower reverse-bias leakage current, due to the significant reduction of TIR effect and Fresnel loss. As compared with Device A (conventional LED), at 200 mA, Device F shows 33%, 34.4%, 33.1%, and 45.3% enhancements in light output power (LOP), luminous flux, external quantum efficiency (EQE), and wall-plug efficiency (WPE), respectively.
    These proposed hybrid specific structures, which were employed in GaN-based LED, indeed improve the total light output performance and reduce the power consumption. Therefore, the high-performance GaN-based LEDs possesses commercial potential to compete with traditional light sources for practical applications in solid-state lighting.

    Abstract Table Captions Figure Captions Chapter 1. Introduction 1-1. History of GaN-based LEDs 1 1-2. Bottlenecks of GaN-based LEDs 3 1-3. Review of Microhole Array Structures 4 1-4. Review of Textured Sidewall Structures 5 1-5. Review of Micro-/Nano-sphere Structures 5 1-6. Thesis Organizations 6 Chapter 2. GaN LEDs with Microholes and Textured Sidewalls 2-1. Introduction 7 2-2. Fabrication Processes of LED Devices 8 2-2-1. LED Wafer Cleaning Process 8 2-2-2. Devices Structure and Fabrication 8 2-3. Experimental Results and Discussion 10 2-3-1. Surface Morphology 10 2-3-2. Electrical Properties 11 2-3-3. Optical Properties 12 2-3-4. Wall-Plug Efficiency and External Quantum Efficiency 13 2-3-5. Near-field Light Emission Mapping 14 2-3-6. Far-filed Radiation Pattern 15 2-4. Summary 15 Chapter 3. Applications of SiO2 Nanoparticles (NPs) Passivation for GaN LEDs 3-1. Introduction 17 3-1-1. Introduction 17 3-1-2. Mechanisms of Anti-reflection 18 3-1-3. Rapid Convective Deposition 20 3-2. Fabrication Processes of LED Devices 21 3-2-1. LED Wafer Cleaning Process 21 3-2-2. Fabrication of Hybrid SiO2 NP/MS Passivation Layer 21 3-2-3. Devices Structure and Fabrication 22 3-3. Experimental Results and Discussion 23 3-3-1. Surface Morphology 23 3-3-2. Transmittance 25 3-3-3. Atom Force Microscope 25 3-3-4. Electrical Properties 26 3-3-5. Optical Properties 27 3-3-6. Wall-Plug Efficiency and External Quantum Efficiency 28 3-3-7. Near-field Light Emission Mapping 29 3-3-8. Far-filed Radiation Pattern 29 3-4. Summary 30 Chapter 4. Applications of Ag Grids Based Current Spreading Layer for GaN LEDs 4-1. Introduction 32 4-2. Fabrication Processes of LED Devices 33 4-2-1. LED Wafer Cleaning Process 33 4-2-2. Devices Structure and Fabrication 33 4-3. Experimental Results and Discussion 35 4-3-1. Surface Morphology 35 4-3-2. Electrical Properties 36 4-3-3. Optical Properties 37 4-3-4. Wall-Plug Efficiency and External Quantum Efficiency 39 4-3-5. Near-field Light Emission Mapping 39 4-3-6. Far-filed Radiation Pattern 40 4-4. Summary 40 Chapter 5. Conclusion and Prospects 5-1. Conclusion 42 5-2. Prospects 44 References 46 Figures

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