本論文研究應用於24-及77-GHz毫米波頻段之CMOS RFICs射頻前端被動元件的設計與製作，晶片製作使用國家晶片中心提供的標準TSMC CMOS 0.18 μm製程。77-GHz CMOS帶通濾波器使用慢波步階式阻抗共振器，比起傳統開路短枝型濾波器縮小率可達80 %，論文討論模擬與量測結果。24-GHz類循環器的部份為使用相位消除技術之CMOS類循環器，以寬邊帶耦合器架構搭配相位消除與結合，利用晶片設計之多層式結構增加耦合量，得到較好的類循環器效果。24-GHz主動濾波器的部份為採用NMOS交錯耦合對提供負電阻，採用兩級串接架構之主動濾波器，可操作在低電壓，並在有限功率的考量下選擇電晶體尺寸，達成低功率設計。輸入與輸出匹配利用電容耦合的匹配方式，所有傳輸走線皆使用HFSS模擬，並代回Agilent ADS進行共同模擬，可以有效達到主動濾波器之低損耗目標。24-GHz相移器的部份為採用反射式負載相移器，整體電路以寬邊帶耦合器與兩個反射式負載諧振電路組成，藉由使用負電阻電路，可達到低損耗之能力表現，並有效抑制插入損耗之變化，負電阻電路可產生補償插入損耗的作用。

This thesis presents the design of the 24- and 77-GHz CMOS bandpass filters, K-band quasi-circulator and phase shifter fabricated by TSMC 0.18-μm CMOS process. The 77-GHz CMOS bandpass filter uses the slow-wave SIR structures to design the filter with two available zero-frequencies. Compared with the original stub filter, the size reduction of the proposed bandpass filter is about 80% when operating at the same resonance frequency. The K-band quasi circulator uses the phase cancellation technology and the multilayer tight coupling structure to enhance the coupling factor of the 3-dB coupler. The 24-GHz active filter using negative resistance circuit was design to compensate the loss of the microstrip half-wave length resonators and improve the insertion loss in the passband. The 24-GHz CMOS phase shifter combined with the broadside coupler and the reflection-type load adds the negative resistor circuit to obtain a low insertion loss variation and wide phase tuning range.

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