| 研究生: |
黃秉恩 Huang, Bing-En |
|---|---|
| 論文名稱: |
以分子模擬法研究一維奈米材料之介面熱阻 The Investigation on Interfacial Thermal Resistance in One-Dimensional Nanomaterials using Molecular Simulations |
| 指導教授: |
賴新一
Lai, Hsin-Yi 張怡玲 Chang, I-Ling |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 機械工程學系 Department of Mechanical Engineering |
| 論文出版年: | 2024 |
| 畢業學年度: | 112 |
| 語文別: | 中文 |
| 論文頁數: | 121 |
| 中文關鍵詞: | 非平衡態分子動力學 、介面熱阻 、聲子平均自由徑 |
| 外文關鍵詞: | Non-Equilibrium Molecular Dynamics, Interfacial Thermal Resistance, Phonon Mean Free Path |
| 相關次數: | 點閱:111 下載:0 |
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本研究主要以非平衡態分子動力學模擬方法探討奈米碳管、矽及矽鍺奈米線的介面熱阻與聲子平均自由徑。於奈米碳管的研究中,首先設定不同自由層長度之奈米碳管,觀察其長度對熱傳導係數及熱阻的影響,並探討奈米碳管的熱傳行為。接著調整控溫層及自由層原子質量以研究介面熱阻隨原子質量的變化,最後以介面熱阻及熱傳導係數計算奈米碳管之聲子平均自由徑。於矽奈米線的研究中,首先觀察自由層長度對矽奈米線熱傳導係數及熱阻造成的影響,再調整熱流控制區及自由層的原子質量並探討原子質量對介面熱阻造成的變化。接著於矽奈米線中以不同濃度摻雜鍺原子,並調整熱流控制區及自由層原子質量以探討不同摻雜濃度下原子質量對介面熱阻造成的影響。最後再以介面熱阻及熱傳導係數計算矽及矽鍺奈米線之聲子平均自由徑。
於奈米碳管的研究中發現其熱傳導係數與熱阻隨長度增加而上升,並發現存在彈道型傳輸,且藉由調整控溫區及自由層原子質量發現介面熱阻及聲子平均自由徑皆隨原子質量的變化而上升,且介面熱阻變化趨勢與聲學不匹配模型計算之反射率相近。於矽及矽奈米線的研究中也發現了熱傳導係數與熱阻隨自由層長度增加而上升的情形,同樣存在彈道型傳輸,矽及矽鍺奈米線之介面熱阻及聲子平均自由徑也隨熱流控溫區及自由層原子質量改變而增加,此外聲子平均自由徑也隨著摻雜濃度上升而增加,介面熱阻的變化趨勢也與聲學不匹配模型計算之反射率相近,可見聲學不匹配模型可以解釋本研究中介面熱阻的變化。
In this study, the interface thermal resistance and phonon mean free path of carbon nanotubes (CNTs), silicon nanowires (Si NWs), and silicon-germanium nanowires (SiGe NWs) were investigated using the non-equilibrium molecular dynamics simulation method.
For the investigation of CNTs, CNTs with charity of (4, 4) were created, and CNTs of different lengths were set up to observe the relationship between length and thermal conductivity, as well as thermal resistance. and to study the thermal transport behavior. Subsequently, the variation of interfacial thermal resistance was investigated by changing the atomic mass of atoms in the temperature-controlled and free regions, and the reflectivity calculated by the acoustic mismatch model (AMM) was used to compare with the interfacial thermal resistance.
In the study of Si NWs and SiGe NWs, nanowires of different lengths were first set up to observe the relationship between length and thermal conductivity as well as thermal resistance. Subsequently, the variation of interfacial thermal resistance was investigated by changing the atomic mass in the temperature-controlled and free regions, and the reflectivity was compared with the interfacial thermal resistance. Then, Ge atoms were doped into the Si NWs, and the interfacial thermal resistance was calculated using the same method, comparing the variation of interfacial thermal resistance under different doping concentrations, and then comparing the interfacial thermal resistance with the reflectivity.
In the studies of CNTs, Si NWs, and SiGe NWs, it was found that the thermal conductivity and thermal resistance increased with the length. Ballistic transport was observed in these structures. Calculations revealed that the interfacial thermal resistance and phonon mean free path increased with the atomic mass. The trend of interfacial thermal resistance variation was found to be similar to the reflectance calculated from the acoustic mismatch model, indicating that the interfacial thermal resistance values can be predicted using reflectance. Additionally, it was observed that the phonon mean free path increased with the doping concentration of Ge atoms.
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校內:2029-04-26公開