| 研究生: |
廖士懿 Liau, Shih-Yi |
|---|---|
| 論文名稱: |
硫化鎘與硒化鎘敏化TiO2光電極在光電化
學系統產氫之研究 Photoelectrochemical hydrogen generation by CdS- and CdSe- sensitized TiO2 photoelectrodes. |
| 指導教授: |
李玉郎
Lee, Yuh-Lang |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2009 |
| 畢業學年度: | 97 |
| 語文別: | 中文 |
| 論文頁數: | 119 |
| 中文關鍵詞: | 硒化鎘 、硫化鎘 、化學浴沈積 、水分解產氫 、硫化鋅 、熱處理 |
| 外文關鍵詞: | CdS, CBD, CdSe, water splitting, ZnS, thermal-treatment |
| 相關次數: | 點閱:75 下載:1 |
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本論文利用化學浴沈積法(Chemical Bath Deposition, CBD)將硫化鎘(CdS)和硒化鎘(CdSe)組裝至TiO2薄膜表面作為光敏化劑應用於光電化學系統進行水分解製氫。研究中探討敏化劑吸附量與其共敏化效應對電極光學性質及光電轉換效率之影響;結果顯示CdS與CdSe在吸光範圍具有不錯的互補效應,但由於兩者導帶及價帶相對位置的關係,使敏化劑組裝順序對電極效能有極大的影響。TiO2/CdS(4)/CdSe(4)的電極結構在能階位置上呈現順向階梯狀,有助於電子、電洞的分離;最佳的光電流密度值~15 mA/cm2(AM 1.5G, UV cut-off, 100mW/cm2),電極效率為7.4 %。此外,在最佳條件電極外部再沈積上硫化鋅(ZnS)作為保護層,可增加電極穩定性,並減少漏電流的發生,使水分解產氫速率可達210 umol.cm-2.h-1。進一步以熱處理製程減少敏化材料與TiO2薄膜間接觸界面的缺陷,提升敏化材料結晶性與電子傳導能力;在300℃和150℃熱處理溫度下,TiO2/CdS(4)300℃/CdSe(4)150℃最佳光電流密度為17 mA/cm2,電極效率為10.6 %。
These studies utilize the method of chemical bath deposition (CBD) to assemble, CdS and CdSe onto porous TiO2 films as sensitizer for photoelectrochemical hydrogen generation. The sensitizer incorporated amount and co-sensitized effect on photoelectrochemical conversion efficiency were discussed in this study. The results show that the CdS/CdSe co-sensitized photoelectrode has not only a complementary effect in light harvest and the cascade structure, TiO2/CdS(4)/CdSe(4), but leads to a stepwise structure of band-edge levels which is advantageous to the electron injection and hole-recovery of the system. The energy conversion efficiency (ECE) achieved by the TiO2/CdS(4)/CdSe(4) electrode under illumination (AM1.5, UV cut-off, 100 mW/cm2) is 7.4%. Zinc Sulfide (ZnS) was further deposited as passivation layer to improve the photoelectrode stability and reduce leakage current. The corresponding hydrogen evolved rate measured for the TiO2/CdS(4)/ CdSe(4)/ZnS electrode is 210 µmol.cm-2.h-1. Further, thermal-treatment process was used to improve TiO2/sensitizer interface and increase sensitizer crystallinity, the electron transfer ability of photoelectrodes and decrease the electrode defects. At the temperature of 300℃ and 150℃, the electrode TiO2/CdS(4)300℃/CdSe(4)150℃ had the highest photocurrent density about 17 mA/cm2 and ECE is 10.6%.
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