簡易檢索 / 詳目顯示

回結果列表
研究生： 廖炳輝
Liao, Ping-hui
論文名稱： 耐高溫含矽-碳保護膜之製備
Deposition of high-temperature protective films containing silicon and carbon
指導教授： 洪昭南
Hong, Chau-Nan Franklin
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2009
畢業學年度： 97
語文別： 中文
論文頁數： 73
中文關鍵詞： 類鑽碳 、保護膜 、耐高溫
外文關鍵詞： protective films, DLC
相關次數： 點閱：80  下載：1 
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報

    • 本研究主要分為兩部分，在第一個部分主要針對不含氫之類鑽碳的探討，而第二部分則是沈積含矽之類鑽碳膜。類鑽碳膜有許多優良的性質，如硬度高、絕緣、耐磨耗、熱導性佳、抗氧化、耐化學侵蝕等特性，因此已被廣泛應用在工業界上。然而，類鑽碳膜的應力過大及熱穩定性不佳，卻限制了其在高溫環境上的應用，因此本研究第ㄧ部分使用濺射沈積法，以濺鍍石墨靶材為碳源，並在基板處加以偏壓，沈積出不含氫的類鑽碳薄膜。而第二部分使用濺射輔助氣相化學沈積法，使用石墨靶材當碳源；矽甲烷當矽源，並在基板處加以偏壓，沈積出含矽的類鑽碳薄膜。在矽含量達37﹪時，其應力僅0.27GPa且熱穩定性在空氣下可耐熱到600℃，此結果相較於不含氫之類鑽碳膜之應力為1.6GPa而熱穩定性在400℃以下來的更佳。本研究輔以電子顯微鏡、化學電子分析儀、微硬度測試及拉曼光譜分析，探討矽含量的增加對鍵結結構改變之影響以及瞭解應力下降和熱穩定性上升之主要原因。

    The study of modified diamond-like carbon (DLC) films is divided into two sections. The first part is using sputtering deposition technique to deposit hydrogen-free DLC films. And the second part is using plasma enhanced chemical vapor deposition technique to deposit Si-DLC films.
    Diamond-like carbon films were employed for a variety of industry applications owing to their unique properties including high hardness, high dielectric constant, scratch resistance, excellent thermal conductivity, oxidation and chemical resistance, etc. However, the high compressive stress and poor thermal stability of DLC films limited their applications especially in high temperature conditions. As a result, we tried to deposit hydrogen-free DLC and Si-DLC films. For improving thermal resistance of DLC films by incorporating a high concentration of silicon in the films. Silane was employed as the silicon source, and argon was used to sputter graphite target for deposition. Low stress and thermally stable silicon-containing DLC films were deposited on the silicon wafer substrates. When the atomic percent of silicon was higher than 37 %, the DLC films stress was only 0.27 GPa, and the films was stable up to 600℃, in comparison to the hydrogen-free DLC films with a high stress of 1.6 GPa and thermal stability only below 400℃. The films were analyzed by SEM, ESCA and Raman spectroscopy to study the structure-property relationship.

    中文摘要 I 英文摘要 II 誌謝 III 總目錄 IV 表目錄 VII 圖目錄 IX 第一章 緒論 1 1-1 前言 1 1-2 類鑽碳膜的研究歷史 1 1-3 類鑽碳膜應用上的瓶頸 3 1-4 研究目的及方向 5 第二章 理論基礎 7 2-1 類鑽碳膜之組成 7 2-2 類鑽碳膜熱穩定性提升的機制 12 2-3 電漿原理 14 2-4 濺鍍原理 20 第三章 實驗參數與研究方法 24 3-1 實驗流程 24 3-2 實驗設計 25 3-3 實驗裝置 26 3-2-1系統設備 26 3-2-2抽氣系統 27 3-2-3壓力檢測系統 27 3-2-4流量控制系統 27 3-2-5磁控濺鍍槍結構 27 3-2-6電源供應器 28 3-2-7基板座裝置 28 3-4 實驗材料 29 3-4-1實驗氣體 29 3-4-2基板材料 29 3-4-3靶材材料 29 3-5 實驗操作 30 3-5-1基板前處理 30 3-5-2實驗操作步驟 30 3-5-2~1不含氫類鑽碳膜的沈積 30 3-5-2~2 含矽類鑽碳膜的沈積 31 3-6 分析與鑑定 32 3-6-1 表面型態觀察 3-6-2 成長速率測定 ...32 3-6-3 薄膜結構分析 ...32 3-6-4 薄膜組成及鍵結型態分析.............................................34 3-6-5 殘留應力測試 ...............................................................35 3-6-6硬度值測定......................................................................36 第四章 結果與討論....................................................38 4-1不含氫類鑽碳膜之研究.........................................................38 4-1-1 鍍膜條件之實驗設計.....................................................39 4-1-2 靶材功率的效應.............................................................39 4-1-3 基板偏壓的效應.............................................................39 4-1-4 濺鍍壓力的效應.............................................................40 4-2 含矽類鑽碳膜之性質探討....................................................42 4-2-1 拉曼光譜分析................................................................42 4-2-2 應力分析........................................................................43 4-2-3 硬度分析........................................................................43 4-2-4 膜結構分析....................................................................44 4-2-4~1 SEM表面結構分析................................................44 4-2-4~2 XRD結晶繞射分析................................................44 4-2-5 熱穩定性分析.................................................................44 第五章 結論................................................................67 第六章 參考文獻........................................................69 作者簡介......................................................................73

    1. 宋健民，鑽石合成，全華科技圖書股份有限公司，台北台灣，2000.
    2. S. Aisenberg and R. Chabot, J. Appl. Phys. 42, ( 1971 ), 2953.
    3. E. G. Spencer, P. H. Schmidt, D. C. Joy, and F. J. Sansalone, Appl. Phys. Lett.
    29, ( 1976 ), 118.
    4. L. Holland and S. M. Ojha, Thin Solid Films L17, ( 1976 ), 38.
    5. J. C. Angus and C.C. Hayman, Science 241, ( 1988 ), 913.
    6. J. Robertson, Diamond Relat. Mater. 3, (1994), 361.
    7. J. Robertson, Surf. Coat. Technol. 50, (1992),185.
    8. A. Grill, Wear 168 , (1993) ,143.
    9. C. Y. Hsu, L. Y. Chen and F. C. N. Hong, Diamond Relat. Mater. 7, (1998), 884.
    10. J. J. Cuomo, D. L. Pappas, J. Bruley, J. P. Doyle and K. L. Saenger,
    J. Appl. Phys. 70 , (1991) ,1706.
    11. A. Grill and V. Patel, Diamond Relat. Mater. 2, (1993) ,597.
    12. D.R. McKenzie, D. Muller, and B.A. Pailthorpe, Phys.Rev.Lett. 67, (1991) ,773.
    13. S.S. Camargo, Jr, A.L. Baia Neto, R.A. Santos, F.L. Freire,Jr, R. Carius, F. Finger, Diamind and Related Materials. 7 , (1998) , 1155.
    14. Weng-Jin Wu, Min-Hsiung Hon, Surface and Coating Technology. 111,
    (1999), 134.
    15. H.L. Bai, E.Y. Jiang, Thin Solid Films. 353 , (1999) , 157.
    16. D.R. Tallant, J.E. Parmeter, M.P. Siegal, R.L. Sompson, Diamond Relat. Mater. 4, (1995) ,191.
    17. G. R. Rao, E. H. Lee, R. Bhattacharya and A. W. McCormick, J. Mater. Res.10, (1995) ,190.
    18. C. M. Chan, T. M. Ko and H. Hiraoka, Surf. Sci. Rep. 24, (1996) ,1.
    19. C. Romming, M. Buttner, U.Vetter, H. Feldermann, O. Wondratschel, and H.
    Hofsass ,J. Appl. Phys. 90, (2001) ,4237.
    20.. L. Valentini, E. Braca, J.M. Kenny, G. Fedosenko, J. Engemann, L. Lozzi,
    S.Santucci, Thin Solid Film. 408, (2002) ,291.

    21. N. Ariel, M. Eizenberg, Y. Wang, S.P. Murarka, Materials Science in
    Semiconductor Processing. 4, (2001) ,383.
    22. L. Khriachtchev, E. Vainonen-Ahlgren,T. Sajavaara, T. Ahlgren, and J.
    Keinonen, J. Appl. Phys. 88 , (2000) ,2118.
    23. Simone Anders, Javier Diaz, Joel W. Agerlll, Appl. Phys. Lett. 71, (1997),3367.
    24. S. Rey, F. Antoni, B. Prevot, E. Fogarassy., J.C. Arnault, J. Hommet, F. Le Normand, P. Boher, Appl. Phys. A 71 , (2000) ,433.
    25. T.A. Friedmann, K. F. McCarty, J.C. Barbour, M.P. Siegal and Dean C. Dibble, Appl. Phys. Lett. 68 , (1996) ,1643.
    26. R. Kalish, Y. Lifshitz, K. Nugent and S. Prawer, Appl. Phys. Lett. 74,
    (1999) , 2936.
    27. A.C. Ferrari, B. Kleinsorge, N.A. Morrison, A. Hart, V.Stolojan, and J. Robertson, J.Appl. Phys. 85 , (1999) , 7191.
    28. A.L. Baia Neto, S.S. Camargo Jr., R. Carius, F. Finger, W. Beyer, Surf. Coat. Tech. 395 , (1999) ,120.
    29. H. Huck, E.B. Halac, C. Oviedo, G. Zampieri, R.G. Pregliasco, E.V. Alonso, M.E. Reinoso, M.A.R. de Benyacar, Appl. Surf. Sci. 141, (1999) ,141.
    30. W.C. Vassell, A.K. Gangopadhyay, T.J. Potter, M.A. Tamor, and M.J. Rokosz, Journal of Materials Engineering Performance. 6 , (1997) , 426.
    31. Racine B, Ferrari AC, Morrison NA, et al., J. Appl. Phys. 90, (2001) , 5002.
    32. Masahito Ban, Takeshi Hasegawa, Surf. Coat. Technol. 162 , (2002) , 1.
    33. W. D. Kingery, H. K. Bowen, and D. R. Uhlmann, Introduction to Ceramics, Chapter 2, John Wiley & Sons, Canada, 1991.
    34. 余樹貞，晶體之結構與性質，第十二章，渤海堂文化公司，台北台灣，1993.
    35. 張瑞發，化工資訊，4，(1993)，68.
    36. C. D. Martino, F. Demichelis, and A. Tagliaferro, Diamond Relat. Mater. 4, (1995) ,1210 .
    37. X. Jiang, W. Beyer, and K. Reichelt, J. Appl. Phys. 68, (1990) ,1378.
    38. Z.L. Akkerman, H. Efstathiadis, and F.W. Smith, J. Appl. Phys. 80,
    (1996) ,3068.
    39. J.Robertson, J. Non-Cryst. Solids. 825 , (1991) , 137.

    40. G. Speranza, N. Laidani, L. Calliari, M. Anderle, Diamond Relat. Materials. 8 , (1999) , 517.
    41. 曾煥華，電漿的世界，第一章，銀禾文化事業有限公司，台北台灣，1987.
    42. Brian Chapman, Glow Discharge Processes, John Wiley & Sons, Inc, United State of America, 1980, Chapter 5.
    43. 洪昭南，電漿反應器，化工技術，第三卷，第三期，124，1995.
    44. J. R. Roth, Industrial Plasma Engineering-Volume 1: Principles, Institute of Physics Publishing, London, 1995.
    45. 陳良益，成功大學化工所碩士論文，1998.
    46. 蔡瑛修，成功大學化工所碩士論文，2000.
    47. 莊達人，VLSI製造技術，高立圖書有限公司，1998修訂.
    48. H. Ichimura and A. Kawana, J. Matr. Res. 9, ( 1994 ) , 151.
    49. D. P. Monaghan, D. G. Teer and I. Efeoglu, Surf. coat. Technol. 59, ( 1993 ) ,21.
    50. Stan Veprek,J. Vac. Sci. Technol. A 17(5), (1999) ,2401.
    51. 何以侃主編，儀器分析，文京圖書有限公司，台北台灣，1997.
    52. I. Watanabe, T. Matsushita and K. Sasahara, Jpn. J. Appl., Phys. 31,(1992), 1428.
    53. R. Nonogaki, S. Yamada, T. Araki, and T. Wada, J. Vac. Sci. Technol. A 17(3), (1999) , 731.
    54. F.Tuinstra and J.L. Koenig, J. Chem. Phys. 53(3), (1970),1126.
    55. S.A. Solin, Physica B 99, (1980) ,443.
    56. M. A. Capano, N. T. McDeutt, R. K. Singh, and F. Qian, J. Vac. Sci. Technol. A14(2), (1996) ,431.
    57. M. A. Tamor and W. C. Vassel, J. Appl. Phys. 76(6), (1994) ,3823.
    58. H. C. Tasi, D. B. Bogy, M. K. Kundmann, D. K. Veirs, M. R. Hilton and S. T. Mayer, J. Vac. Sci. Technol. A 6(4), (1998) ,2307.
    59. 何主亮，常挽瀾，陳育智，真空科技，第9卷，第二期，34，1996.
    60. S. Prawer, K. W. Nugent, Y. Lifshitz, G. D. Lempert, E. Grossman, J. Kulik, I. Avigal, and R. Kalish, Diamond Relat. Mater. 5, (1996) ,433.
    61. C. Mapelli, C. Casiglioni, C. Zerbi, and K. Mullen, Phys. Rev. B 60, (1999) ,12710.
    62. B. Kleinsorge, A. C. Ferrari, J. Robertson, and W. I. Milne, J. Appl. Phys. 88, (2000) ,1149.
    63. R. O. Dillon, J. A. Woollam, and V. Katkanant, Phys. Rev. B 29, (1984) ,3482.
    64. R. J. Nemanich, J. T. Glass, G. Lucovsky, and R. E. Shroder, J. Vac. Sci. Technol. A 6, (1988) ,1783.
    65. J. R. Shi, X. Shi, Z. Sun, E. Liu, B. K. Tay, S. P. Lau, Thin Solid Films. 366, (2000) ,169.
    66. L. K. Cheeh, X. Shi, E. Liu, B. K. Tay, J. R. Shi, and Z. Sun, Phil. Mag. B 79, (1999) ,1647.
    67. B. Kleinsorge, S. E. Rodil, G. Adamopoulos, J. Robertson, D. Grambole, and W. Fukarek, Diamond Relat. Mater. 10, (2001),965.
    68. A. C. Ferrari and J. Robertson, Phys. Rev. B 61(20), (2000) ,14095.
    69. D. Neerinck, P. Persoone, M. Sercu, A. Goel, D. Kester, D. Bray, Diamond and Related Materials. 7, (1998) , 468.

    下載圖示 校內：2010-08-17公開
    校外：2010-08-17公開
    QR CODE