本研究的目的在於探討靶材之晶粒尺寸、晶格方向及析出物尺寸對Al-Cr合金的沉積速率、表面粗糙度、薄膜成份及薄膜光學性質的影響。
噴覆成型鑄錠及傳統鑄造鑄錠析出物尺寸分別為3μm、53μm。經由不同時間熱處理後之晶粒尺寸為100μm、200μm及260μm。鑄造靶材的平均面堆積密度依晶粒尺寸由小到大分別為0.63、0.66及0.68，噴覆成型靶材為0.67、0.66及0.67。
實驗的結果顯示薄膜沉積速率及靶材損失重量隨著平均面堆積密度增加而增加，小的析出物尺寸容易因Arcing而被濺擊出，增加基地相（α-Al）的面積，因為基地相有較大的濺鍍率，所以小尺寸的析出物會有較大的薄膜沉積速率及靶材損失重量。鑄造靶材的沉積速率及靶材損失重量隨著晶粒尺寸的增加而增加，與前人之研究有相反的結果，可能是因為晶格方向的影響大於晶粒尺寸的導致。
分佈不均勻且大尺寸的析出物造成不均勻的Arcing，在濺鍍薄膜上可發現因為Arcing所產生的顆粒（~600nm以下），均勻分佈且小尺寸的析出相較少發現顆粒。因為Arcing的發生，使的濺鍍薄膜的成份不均勻，而濺鍍薄膜的折射係數（n）隨著薄膜內鉻含量的增加而升高，消光係數（k）隨著薄膜內鉻含量的增加而降低。隨著入射光波長增加，薄膜的n、k值增加。

The study aims at the effect of grain size、orientation of grain and precipitate size on the deposition rate、the surface roughness of thin films、Cr contents of thin films and optical properties of thin films.
The grain size of as-sprayformed billet and conventional casting billet are about 3μm、53μm. The grain size of As-heat treatment are about 100μm、200μm and 260μm. The mean face density of casting targets are about 0.63、0.66 and 0.68, as-sprayformed targets are about 0.67、0.66 and 0.67.
The experimental results show that the deposition rate and the loss weight of target increases as mean face density increases, Small precipitates sputtered more easy due to Arcing. The areas of matrix(α-Al) increases. Small precipitates have higher deposition rate and the loss weight of target due to the matrix have higher sputter yield. The deposition rate and the loss weight of target of as-cast targets increases as grain size increases, it is different from previous studies due to the effect of orientation of grains more than grain size.
Non-uniform and large precipitates cause non-uniform Arcing, Particles (~600nm less) caused by Arcing can find on deposited thin films, however, uniform and small precipitates have less particles. The composition of deposited thin film is non-uniform due to Arcing, The refraction coefficient (n) of thin films increases as Cr contents increase, the scatter coefficient (k) of thin films decreases as Cr contents increases. n and k values increases as the wavelength of incidence wave.

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