本研究主要在探討臨場基板加溫，製程後真空中退火與製程後氮氣氛圍中退火等三種不同熱處理的方式，對於氧化鋅透明導電膜物理性質之影響，並將熱處理完成後之氧化鋅薄膜當作高分子發光二極體(PLED)之陽極，研究不同熱處理後之氧化鋅陽極對於PLED元件整體表現之影響。
實驗中，我們使用離子束濺鍍法來沉積氧化鋅膜，靶材選用ZnO的化合物靶，基板為玻璃，熱處理之溫度變化為100 oC、200 oC、300 oC、400 oC，氧化鋅薄膜沉積厚度約控制在350 nm，PLED元件之結構為ZnO/PEDOT:PSS/PF/Ca/Al。
實驗結果顯示，臨場基板加溫所製備之ZnO薄膜，其(002)晶格結構隨著溫度上升而明顯增強。在基板溫度為100 oC時，可得一導電性良好ρ=7.2×10-3 ohm-cm與穿透率為83%之透明導電膜，應用在PLED元件上可得系列中最佳整流比202.51，最大發光效率7.4 cd/A，亮度26600 cd/m2。在製程後氮氣氛圍中退火100 oC時，可得一導電性良好ρ=3.8×10-3 ohm-cm與穿透率為90%之ZnO透明導電膜，應用在PLED元件上可得整流比37.02，發光效率4.8 cd/A，ZnO樣品系列中最大亮度28000 cd/m2。

ZnO films are deposited in glass by Ion-Beam Sputtering method, and the target is ZnO compound.

In this research, we choose three methods to treat ZnO films, as follows: in-situ annealing, post-annealing in vacuum, and post-annealing in nitrogen atmosphere.

When the ZnO films were treated, we investigated their physical properties, as follows: microstructure, electrical property, optical property and the composition of the film.

We also use the treated films to be the anode of PLED devices, while the structure of PLED is ZnO/PEDOT:PSS/PF/Ca/Al.

The experiment results show that the ZnO film treated with in-situ annealing will have a high c-axis orientation with rising temperature.

We obtained a ZnO film which has low resistivity (ρ=7.2×10-3 ohm-cm) and high transmittance (83%) by holding the substrate temperature of 100 oC.
The ZnO film was used to be the anode of a PLED device and have the best luminance efficiency 7.4 cd/A and the brightness is 26600 cd/m2.

The ZnO film treated with post-annealing temperature of 100 oC in nitrogen atmosphere present the lowest resistivity (3.8×10-3 ohm-cm) and high transmittance (90%).
The ZnO film was also fabricated to a PLED device and its luminance efficiency is 4.8 cd/A and the highest brightness (28000 cd/m2) in the ZnO series.

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