本研究透過低成本的濕式刻蝕以及製備大面積金屬輔助化學刻蝕（MAC刻蝕）的方法，這是一種用於製造矽奈米線陣列（Si NWs）的無電刻蝕方法。此方法分為兩步驟，將其分為沈積和蝕刻部分，並討論了沉積和蝕刻時間對Si NWs反射率的影響。 我們已經成功地將平均反射率（300-1100nm）降低到0.838％，大約是裸矽的46倍。該方法可以增加光的捕獲並降低短波長反射率，從而可以提高Jsc並提高效率。
在叉指背接觸式結構中，本篇使用快速且成本低的金屬遮罩進行微影來定義圖案，並探討不同曝光、顯影時間下，得到最佳的光阻參數，並討論此手法的相關困境，如對準問題、遮罩設計及量測手法，本篇都將一一探索分析來提升叉指背接觸式（IBC）太陽能電池Jsc並提高效率。

In this study, low-cost wet etching and preparation of large-area metal-assisted chemical etching (MAC etching) are used. This is an electroless etching method for manufacturing silicon nanowire arrays (Si NWs). We used the two-pot method to divide it into deposition and etching parts, and discussed the effects of deposition and etching time on the reflectivity of Si NWs. We have successfully reduced the average reflectivity (300-1100nm) to 0.838%, which is about 46 times that of bare silicon. This method can increase light capture and reduce short-wavelength reflectivity, which can improve Jsc and improve efficiency.
In the interdigitated back contact (IBC) structure, this article uses a fast and low-cost metal mask for lithography to define the pattern, and discusses the optimal photoresist parameters under different exposure and development times. And discuss the difficulties of this technique, such as alignment problems, mask design and measurement techniques, this article will explore and analyze one by one to improve the interdigital back contact (IBC) solar cell Jsc and improve efficiency.

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