本篇論文研究為半導體InSb對磁場的特性，我們將結構設置為SIS(semiconductor-insulator-semiconductor)，利用磁場改變InSb的介電係數來操縱共振波的相位。因為當外加磁場時，半導體內部的電子會因為磁場產生迴旋運動(Cyclotron motion)改變半導體的介電係數，使共振波在SIS結構產生不同的相位變化，因此我們可以利用磁場大小來操縱共振波的相位變化。
因為上述利用磁場操縱半導體的性質，我們設計了一個在紅外波段的結構來改變入射波的反射角度，此結構可以利用單元的數目和外加磁場的梯度來改變反射的角度變化，達到使光偏折的目的，而此裝置可以使角度最多偏折到正負50度下上，我們也利用改變結構中介電質係數使角度更大。
本篇論文將使用有限元素分析軟體COMSOL Multiphysics來進行模組設計和模擬分析，並且輔以Matlab軟體來幫助我們計算驗證。

We know metasurface has very various characteristic. One feature of metasurface can change the characteristic of electromagnetic wave. We want to use changing magnetic to cause the same resulting as metasurface. This paper studies the characteristics of the magnetic field of InSb. We set the structure to SIS (semiconductor-insulator-semiconductor), and use the magnetic field to change the dielectric constant of InSb to manipulate the phase of the resonant wave. Because when we add a magnetic field, the electrons which inside the semiconductor would have the cyclotron motion. And the cyclotron motion would cause dielectric coefficient become different. So the resonance wave would have different phase changes in the SIS structure. Therefore, we can use the magnetic field to manipulate the phase of resonance wave. .
Because of the above-mentioned nature of manipulating semiconductors using magnetic fields, we have designed a structure in the infrared band to change the angle of reflection of incident waves. This structure can change the angle of reflection by using the number of cells and the gradient of the applied magnetic field to achieve optical deflection. The purpose of this device can be to deflect the angle up to plus or minus 45 degrees, we also use the change of the dielectric coefficient of the insulator to make the angle larger.

[1] B. H. Cheng, Y. Z. Ho, Y. C. Lan,D. P. Tsai, ”Optical Hybrid-Superlens Hyperlens for Superresolution Imaging”, IEEE J. Sel. Top. Quantum Electron, Vol. 19, Issue. 3, 2013.
[2] 林浩存, 蔡進平, “超穎介面介紹與其應用”, 物理雙月刊, 36卷, 4期,pp264-265,2014.
[3] S. Sun, K.-Y. Yang, C.-M. Wang, T.-K. Juan, W. T. Chen, C. Y. Liao, Q. He, S. Xiao, W.-T. Kung, G.-Y. Guo, L. Zhou and D. P. Tsai. “High-efficiency broadband meta-hologram with polarization-controlled dual images”, Nano Letters 12, 6223 (2012).
[4] M. S. Kushwaha, “Plasmons and magnetoplasmons in semiconductor heterostructures”, Surface Science Reports, Vol. 41, Issues 1-8, pp. 1-416, 2001.
[5] 謝錦龍, “電漿與極光”, 國家奈米元件實驗室奈米通訊, 20卷, 4期, pp.36-37, 2013.
[6] 邱國斌, 蔡定平, “左手材料奈米平板的表面電漿量子簡介”, 物理雙月刊, 25卷, 3期, pp. 373-383, 2003.
[7] David J. Griffiths, “Introduction to electrodynamics Third Edition”,pp.160-163,pp.175-181.
[8] Stefan A. Maier, “Plasmonics: Fundamentals and Applications”, Springer US, pp.25-26, pp.39-50, 2007.
[9] G. I. Stegeman, R. F. Wallis, A. A. Maradudin, “Excitation of surface polaritons by end-fire coupling”, Optics letters, Vol.8, No.7, July, 1983.
[10] 邱國斌, 蔡定平, “金屬表面電漿簡介”, 物理雙月刊, 28卷, 2期, pp.472-482, 2006.
[11] 杜平安, 甘娥忠, 于亞婷, “有限元法-原理、建模及應用”, 第一版, 國防工業出版社, pp.1-8.
[12] 王剛, 安琳, “COMSOL Multiphysics工程實踐與理論仿真-多物理場數值分析技術”, 電子工程出版社, 北京, pp. 36-46, 2012.
[13] M. S. Kushwaha, P. Halevi, “Magnetoplasmons in thin films in the Faraday configuration”, Physical Review B, Vol. 36, No. 11, pp. 3879-3889, 1987.
[14] J. J. Brion, R. F. Wallis, A. Hartstein, E. Burstein, “Theory of Surface Magnetoplasmons in Semiconductors”, Phys. Rev. Lett. 28, pp.1455-1458, 1972.
[15] Hsiang-Hao Wu, Yung-Chiang Lan, “Magnetic lenses of surface magnetoplasmons in semiconductor–glass waveguide arrays”, Applied Physics Express, Vol. 7, No. 3, 2014.
[16] Bo Han Cheng, Hong Wen Chen, Kai Jiun Chang, Yung-Chiang Lan, Din Ping Tsai, “Magnetically controlled planar hyperbolic metamaterials for subwavelength resolution”, Scientific Reports, vol. 5, 2015.