本論文基於已設計完成現有之單光子雪崩式二極體，期望透過改變自身結構以外的方式，使其各項性能表現更加優異。文中挑選了三個因素，以視其是否能增進單光子雪崩式二極體的性能表現，分別為照光強度、移除元件表面之二氧化矽層，以及溫度。
在照光強度的部分，發現其對於單光子雪崩式二極體之光子偵測效率並未造成顯著影響；而在移除元件表面之二氧化矽層的部分，發現將其移除後，元件之光子偵測效率相較於未移除時提升了約45%。最後溫度的部分，得知元件之崩潰電壓以及暗計數，皆會隨著溫度的提升而升高。也發現在溫度升高的過程中，由Trap-assisted thermal generation對於暗計數所造成的影響，遠大於其他造成暗計數的原因，因此隨著元件操作溫度的提升，其光子偵測效率反而會隨之下降。

This paper is based on the design of an existing single photon avalanche diode with the aim of improving its performance by means other than changing its own structure. Three factors have been selected to determine whether they can improve the performance of the single photon avalanche diode: the intensity of illumination, the removal of the silicon dioxide layer from the surface of the device, and the temperature.
In the section on illumination intensity, it was found that it did not significantly affect the photon detection efficiency of the single photon avalanche diode, while in the section on the removal of the silicon dioxide layer from the surface of the device, it was found that its removal improved the photon detection efficiency of the device by approximately 45% compared to that without the removal.
Finally, in the case of temperature, it was found that the breakdown voltage and the dark count of the device increased as the temperature increased. It was also found that trap-assisted thermal generation has a much greater effect on the dark count than other causes of dark count during the temperature rise, so that the photon detection efficiency decreases as the operating temperature of the device increases.

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