本論文主要是利用光激發螢光法（Photoluminescence，簡稱PL）來研究成長在(111)B GaAs上之InGaAs量子點和量子井結構，在不同溫度下（10K~300K）的光學特性變化。
　　在量子點的PL光譜中我們並沒有發現對應wetting layer躍遷的peak，證明量子點的形成機制並非傳統的S-K mode；從變溫的光譜中我們發現量子點和量子井結構隨著溫度增加，其peak energy皆有紅位移的現象，使用Varshni Equation和與聲子振盪頻率有關的能隙公式對peak energy隨溫度變化之關係圖做擬合(fit)，得到InGaAs和GaAs的α、β、κ和θ四個參數。我們亦探討不同量子結構的發光強度隨溫度變化的關係和差異，並且以活化能公式做擬合，可以得到載子從量子結構中躍遷至barrier所需的活化能大小，發現量子點的活化能大於量子井的活化能，顯示量子點具有較佳的侷限性；然而，以450℃成長的量子點樣品，其活化能比預期的來得小，我們推論是因為在較低的溫度下磊晶，容易形成缺陷所致。

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