本論文利用熱注入法(hot-injection)在溫度260℃下持溫30分鐘合成Cu2(Fe1-xCox)SnS4(x=0、0.2、0.4、0.6、0.8、1)奈米晶，探討其能隙隨著Co/Fe組成變化情形。Cu2(Fe1-xCox)SnS4奈米晶直接能隙隨著Co含量增加由1.46 eV降低至1.30 eV，近似線性遞減，顯示Cu2(Fe1-xCox)SnS4奈米晶適合應用於光伏元件當中吸收層材料。
此外，以熱注入法於270℃下持溫0.5小時及以單一反應器(one-pot)法於270℃下持溫48-96小時合成Cu2MnSnS4 (CMTS)。熱注入法合成之主要產物推測為介於orthorhombic Cu3SnS4 (CTS)及tetragonal CMTS之中間相(intermediate phase)，持溫48小時之合成產物為中間相及CMTS，將反應時間增至96小時，可得tetragonal CMTS純相。tetragonal CMTS相能隙為1.62-1.66 eV。

The tunable bandgap of Cu2(Fe1-xCox)SnS4 nanocrystals synthesized at 260℃ for 30 min by the hot-injection method was explored as a function of the Co concentration. The direct bandgaps of Cu2(Fe1-xCox)SnS4 nanocrystals can be tuned in the range of 1.30-1.46 eV, which decrease almost linearly with the Co concentration, showing that Cu2(Fe1-xCox)SnS4 nanocrystals may be well suited for application as the absorption layer in thermoelectric and photovoltaic devices.
Cu2MnSnS4 (CMTS) was synthesized at 270℃ for 0.5 h by the hot-injection method and at 270℃ for 48-96 h in a one-pot system respectively. The major phase in the samples synthesized by the hot-injection method was possibly an intermediate phase of orthorhombic Cu3SnS4 (CTS) and tetragonal CMTS. For the one-pot method, the intermediate phase and CMTS were formed in the samples synthesized at 270℃ for 48 h, while prolonging the synthesis time to 96 h produced single CMTS phase in the samples. The bandgap of tetragonal CMTS is about 1.62-1.66 eV.

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