本論文使用水熱法成長(Hydrothermal growth, HTG)氧化鋅(Zinc oxide, ZnO)薄膜並結合基板轉移與表面粗化技術，進行n-ZnO/p-CuO紫外光感測器(Ultra Violet Photo Detectors, UV-PDs)之開發與光電特性之探討。本論文所開發的基本論文使用水熱法成長(Hydrothermal growth, HTG)氧化鋅(Zinc oxide, ZnO)薄膜並結合基板轉移與表面粗化技術，進行n-ZnO/p-CuO紫外光感測器(Ultra Violet Photo Detectors, UV-PDs)之開發與光電特性之探討。本論文所開發的基板轉移技術(Wafer Transfer, WT)可輕易將HTG-ZnO薄膜與晶種層分離，並移除部份水熱成長初期具高缺陷密度的癒合層；相較於傳統直接以HTG-ZnO薄膜所製備水平結構UV-PD的光電特性，HTG-ZnO薄膜結合WT技術所製備具垂直結構的UV-PD不僅可進一步提升薄膜晶體品質，且具有較短電流傳導路徑、較均勻的電流分布以及較低的串聯電阻，展現較優異的光電特性，其中光響應強度、上升與下降時間分別為310倍、18 s及6 s。
HTG-ZnO薄膜結合WT與表面粗化技術所製備具垂直結構的UV-PD，不僅可將殘留癒合層全部移除且可蝕刻移除薄膜內部差排相關缺陷以更進一步提升薄膜晶體品質之外，可於HTG-ZnO表面所形成最穩定{101 ̅1}晶面的六角錐體粗化結構增加光的吸收，進一步改善光電特性，所得UV-PD的光響應強度、上升與下降時間分別為943倍、12 s及2 s。
另外，於本論文亦提出以HTG-ZnO薄膜結合化學機械研磨(Mechanical Polish, MP)之製程技術開發，藉由適化的MP製程不僅可移除相對較差品質的HTG-ZnO薄膜底部以提升薄膜晶體品質(ω-rocking curve之FWHM由1.28˚降至1.12˚)外，也可本論文使用水熱法成長(Hydrothermal growth, HTG)氧化鋅(Zinc oxide, ZnO)薄膜並結合基板轉移與表面粗化技術，進行n-ZnO/p-CuO紫外光感測器(Ultra Violet Photo Detectors, UV-PDs)之開發與光電特性之探討。本論文所開發的基板轉移技術(Wafer Transfer, WT)可輕易將HTG-ZnO薄膜與晶種層分離，並移除部份水熱成長初期具高缺陷密度的癒合層；相較於傳統直接以HTG-ZnO薄膜所製備水平結構UV-PD的光電特性，HTG-ZnO薄膜結合WT技術所製備具垂直結構的UV-PD不僅可進一步提升薄膜晶體品質，且具有較短電流傳導路徑、較均勻的電流分布以及較低的串聯電阻，展現較優異的光電特性，其中光響應強度、上升與下降時間分別為310倍、18 s及6 s。
HTG-ZnO薄膜結合WT與表面粗化技術所製備具垂直結構的UV-PD，不僅可將殘留癒合層全部移除且可蝕刻移除薄膜內部差排相關缺陷以更進一步提升薄膜晶體品質之外，可於HTG-ZnO表面所形成最穩定{101 ̅1}晶面的六角錐體粗化結構增加光的吸收，進一步改善光電特性，所得UV-PD的光響應強度、上升與下降時間分別為943倍、12 s及2 s。
另外，於本論文亦提出以HTG-ZnO薄膜結合化學機械研磨(Mechanical Polish, MP)之製程技術開發，藉由適化的MP製程不僅可移除相對較差品質的HTG-ZnO薄膜底部以提升薄膜晶體品質(ω-rocking curve之FWHM由1.28˚降至1.12˚)外，也可精準控制膜厚進一步達到薄化之目的(~300 nm)。
本研究所提出具簡易且低成本的水熱成長方式所磊晶成長之HTG-ZnO薄膜，結合本研究所開發的WT、SR或MP製程技術，不僅可應用於垂直結構UV-PDs製備可提升元件光電特性之展現，預期薄膜電晶體(TFTs)與發光二極體(LEDs)等元件應用亦深具潛力。
精準控制膜厚進一步達到薄化之目的(~300 nm)。
本研究所提出具簡易且低成本的水熱成長方式所磊晶成長之HTG-ZnO薄膜，結合本研究所開發的WT、SR或MP製程技術，不僅可應用於垂直結構UV-PDs製備可提升元件光電特性之展現，預期薄膜電晶體(TFTs)與發光二極體(LEDs)等元件應用亦深具潛力。
板轉移技術(Wafer Transfer, WT)可輕易將HTG-ZnO薄膜與晶種層分離，並移除部份水熱成長初期具高缺陷密度的癒合層；相較於傳統直接以HTG-ZnO薄膜所製備水平結構UV-PD的光電特性，HTG-ZnO薄膜結合WT技術所製備具垂直結構的UV-PD不僅可進一步提升薄膜晶體品質，且具有較短電流傳導路徑、較均勻的電流分布以及較低的串聯電阻，展現較優異的光電特性，其中光響應強度、上升與下降時間分別為310倍、18 s及6 s。
HTG-ZnO薄膜結合WT與表面粗化技術所製備具垂直結構的UV-PD，不僅可將殘留癒合層全部移除且可蝕刻移除薄膜內部差排相關缺陷以更進一步提升薄膜晶體品質之外，可於HTG-ZnO表面所形成最穩定{101 ̅1}晶面的六角錐體粗化結構增加光的吸收，進一步改善光電特性，所得UV-PD的光響應強度、上升與下降時間分別為943倍、12 s及2 s。
另外，於本論文亦提出以HTG-ZnO薄膜結合化學機械研磨(Mechanical Polish, MP)之製程技術開發，藉由適化的MP製程不僅可移除相對較差品質的HTG-ZnO薄膜底部以提升薄膜晶體品質(ω-rocking curve之FWHM由1.28˚降至1.12˚)外，也可精準控制膜厚進一步達到薄化之目的(~300 nm)。
本研究所提出具簡易且低成本的水熱成長方式所磊晶成長之HTG-ZnO薄膜，結合本研究所開發的WT、SR或MP製程技術，不僅可應用於垂直結構UV-PDs製備可提升元件光電特性之展現，預期薄膜電晶體(TFTs)與發光二極體(LEDs)等元件應用亦深具潛力。

The use of substrate transfer for the fabrication of vertical ultraviolet photodetectors (UV-PDs) based on hydrothermally grown (HTG) n-ZnO/sputtered p-CuO heterojunction (HJ) is demonstrated. As compared with that of the conventional device without wafer transfer, improvements in UV light responsivity (defined as the ratio of current density under UV 365 nm light irradiation to that of in dark) from 29 to 310 is obtained, which is attributed to the vertical structure enable a much shorter conduction path and make possible the removal of amorphous seed layer. With a further chemical etching to HTG ZnO layer after wafer transfer, pyramidal surface textures were formed and UV light response as high as 943 was obtained. The additional gain in photo responsivity is due to a reduced light reflection and the removal of highly-defected initial ZnO growth layer.

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