本論文採用射頻磁控共濺鍍系統，開發鋅摻雜氧化銦鎵鋅主動層之薄膜電晶體，成功改善介面品質及元件電特性，有助於未來平面顯示器應用及發展。
本論文分為兩部分，首先致力於提升閘極氧化層絕緣能力，藉由二氧化鉿與二氧化鋯共濺鍍製備氧化鉿鋯作閘極介電層，改善薄膜界面品質，有效減少介電層/主動層界面缺陷密度，並透過沉積後退火製程，優化薄膜品質，與單層二氧化鉿及單層二氧化鋯相比，元件特性有顯著提升，因此氧化鉿鋯更適合作氧化銦鎵鋅通道之介電層;第二部分為改善氧化銦鎵鋅薄膜濃度過高導致過多氧空缺進而影響元件特性之問題，利用共濺鍍技術將氧化鋅與氧化銦鎵鋅共沉積，藉由調變氧化鋅濺鍍功率，探討薄膜內鋅比例對元件之影響，並透過退火溫度調變，有效修復缺陷密度，改善薄膜品質。
結果顯示，氧化鋅濺鍍功率設定60W、在氮氣環境下退火300oC時，元件有最佳操作特性，其臨介電壓為0.51 V、載子遷移率為14.3 cm2V-1s-1、次臨介擺幅為0.136 V/dec、電流開關比為1.03×107、界面缺陷密度為2.73×1012 cm-2eV-1。，綜合以上實驗結果與本論文目的相符，因此本研究成功開發新穎主動層材料，期望有助於未來平面顯示器應用及發展。

In this paper, the RF magnetron co-sputtering system is used to develop a thin film transistor with zinc-doped indium gallium zinc oxide active layer, which successfully improves the interface quality and component electrical characteristics, and is helpful for the future application and development of flat panel displays.
This thesis is divided into two parts. Firstly, it is devoted to improving the insulation of the gate oxide layer. The hafnium-zirconium oxide is prepared by co-sputtering as a gate dielectric layer to improve the interfacial quality of the film by effectively reducing the dielectric layer/active layer interfacial defect density. Through the post-deposition annealing process, the film quality is optimized, compared with single-layer hafnium dioxide and single-layer zirconium dioxide, the component characteristics are significantly improved. Secondly, the device characteristics are beneficially dependent on the concentration of the excessive oxygen vacancies in the indium gallium zinc oxide film. Specifically, ZnO co-doped IGZO is prepared by varying the sputtering power of zinc oxide in order to study the role of zinc ratio. Different annealing temperatures are also implemented to effectively improve the film quality by reducing the defect density.

The results show that when the zinc oxide sputtering power is set at 60W and the annealing is performed at 300oC in a nitrogen atmosphere, the optimal device electric characteristics are obtained; namely, the threshold voltage is 0.51 V, carrier mobility is 14.3 cm2V1s1, subthreshold swing is 0.136 V/dec, Ion/Ioff current ratio is 1.03×107 and the interface defect density is 2.73×1012 cm2eV1. The results of the study on the novel active layer materials obtained are expected to find a unique application in the future development of flat panel displays.

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