場發射顯示器是藉由背面基板的陰極放電，將螢光層激發進而發光的新世代顯示器。其最大的優點在於結合了傳統陰極射線管以及現有平面顯示器的所有好處於一身，諸如：反應速度快、高亮度、做動溫度範圍大(-40~+80oC)，體積小。雖然場發射顯示器具有以上的優勢，但是卻仍有許多待解決的問題，包含：使用壽命的提升，可靠度、成本、以及追求更小的驅動電壓。爲了解決這些問題，本研究試著採用矽奈米線作為場發射的發射體，因為其具有良好的深寬比、小的放射尖端曲率半徑等本質的條件。我們希望能藉由矽奈米線的合成條件控制(深寬條件、密度等)，改善放射體的物理性質，進而獲得更小的起始電場。
在理論模擬部分，文中採用了圓球體座標系統結合電場勢位能以及場發射的統馭方程(FN方程式)，作為分析的基礎，計算出在不同幾何外型與邊界條件下的電場強度以及電流密度。並從此結果，作為實驗設計的依據與佐證，發現到，在放射體尖端曲率半徑越小、外加電壓越大、陽極距離越近、以及越低的材料功函數的情況下會得到最好的場發射效果。
實驗中，我們使用金作為觸媒來成長矽奈米線，並先對適當金矽共熔合金顆粒的形成做了探討，發現到在10,30,60sec(2nm,5nm,10nm)的厚度條件下，在預處理後可得到較均勻的奈米顆粒。接著採用前處理得到最佳的鍍金時間，使用熱化學氣相沉積的方式成長矽奈米線。發現在適當的濃度、成長溫度，觸媒厚度及成長時間的條件下，可以大幅的降低現有矽奈米線的起始電場到大約0.7V/um的水準。

A field emission display (FED) is a new generation of flat panel displays using field emitting cathodes to bombard phosphor coatings anode as the light emissive medium. FED combines the merits of conventional cathode ray tube (CRT) and other flat panel displays such as quick response, high brightness, operation temperature, small etc. Even though there are some unsolved problems in this field including life time, reliability, cost, and lowering turn on field. We have adopted a potential material, that is, silicon naonwires, which are great in high aspect ratio, tiny curvature of fine tip, IC comparable, to improve the field emission characteristics under properly synthesis condition.
In simulation part of this work, the nature of the field emission is defined analytically by employing an exact 3D electric field solution in prolate spheroidal coordinates and FN equation with examining the relationship between current density and electric field. This approach has widely adopted in literature and provided an analytical guideline in fabrication of emitters, including fine tip curvature radius, applied voltage, lower anode distance, and decreasing material work function.
We have been used gold as catalyst for silicon nanowires synthesis due to its lower eutectic point to other materials, and vapor-liquid-solid (VLS) mechanism via thermal chemical vapor deposition has been utilized in this work. A low turn on field (~0.7V/um) emitter based on SiNWs has been synthesized successfully under properly condition of synthesis such as growth time, growing temperature, and introduced gas percentage.

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