本研究探討自組裝分子層修飾濺鍍 NiOx 電洞傳輸層，對倒置型鈣鈦礦太陽能電池之界面品質與元件性能的影響。在倒置型鈣鈦礦太陽能電池中，電洞傳輸層與鈣鈦礦之間的界面品質會顯著影響元件的非輻射復合與開路電壓。實驗結果顯示，單獨使用 NiOx 作為電洞傳輸層時會造成明顯的開路電壓損耗，而引入自組裝分子層修飾後可有效降低界面非輻射復合。其中 NiOx/MePA-CPA 具有較佳的界面修飾效果，並可改善 MePA-CPA 單獨使用時鈣鈦礦薄膜覆蓋率不足的問題。相較於 NiOx 元件，優化後的 NiOx/MePA-CPA 單結太陽能電池之開路電壓由 1.13 V 提升至 1.28 V，光電轉換效率由 17.87% 提升至 21.11%。
最後將最佳化之 NiOx/MePA-CPA 應用於鈣鈦礦/矽串聯太陽能電池中，使元件開路電壓由 1.76 V 提升至 1.89 V，效率由 24.39% 提升至 28.04%。綜合上述結果，本研究證明 NiOx/MePA-CPA 界面修飾可有效改善 NiOx 界面品質、減少界面非輻射復合並提升元件效率。

Sputtered NiOx is widely used as a hole transport layer (HTL) in inverted perovskite solar cells (PSCs) because of its high optical transmittance and good stability. However, direct contact between NiOx and the perovskite layer may induce interfacial non-radiative recombination and cause significant open-circuit voltage (Voc) loss. In this study, self-assembled monolayers (SAMs), including 3PATAT-C3 and MePA-CPA, were introduced to modify the NiOx/perovskite interface. Among these structures, NiOx/MePA-CPA exhibited better interfacial properties and improved the insufficient perovskite film coverage observed when MePA-CPA was used alone. The optimized NiOx/MePA-CPA single-junction PSC increased the Voc from 1.13 to 1.28 V and the power conversion efficiency (PCE) from 17.87% to 21.11%. When applied to perovskite/silicon tandem solar cells, the Voc and PCE were further improved from 1.76 to 1.89 V and from 24.39% to 28.04%, respectively.

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