本論文主要針對UWB 射頻收發機CMOS晶片以及3-5-GHz射頻接收模組進行研究與製作，CMOS晶片包括3-5-GHz寬頻平衡器電路及DC-20-GHz T/R 切換開關，晶片製作均使用國家晶片中心(CIC)提供的TSMC 0.18 μm製程。寬頻平衡器電路與T/R切換開關均採用on-wafer量測。
3-5-GHz寬頻被動平衡器之量測結果顯示，在頻帶內S21 > -7 dB，S31 > -6 dB。振幅差異小於2.7 dB，相位差異介在172˚至189˚之間，與理想值180˚之相位偏差(phase imbalance)小於9˚，輸入返回損耗大於13 dB。
DC-20-GHz 分散式T/R切換開關其量測結果顯示，各Port之返回損耗S11 <-10 dB、S22 <-10 dB、S33 <-12 dB；導通時之S21 >-6.3 dB、S31 >-6 dB；不導通時之S21 <-17 dB、S31 <-17 dB；T/R之間隔離度S23 <-19.9 dB。Input P1 dB大於13 dBm，IIP大於19 dBm。
3-5-GHz射頻接收模組使用離散元件製作，包括3-5-GHz超寬頻低雜訊放大器，3-5-GHz帶通濾波器，3-5-GHz混波器(乘法器)，3.9-4.1-GHz 0°/90°移相器，3-5-GHz等化器，3-5-GHz功率分配器，DC-1-GHz低通濾波器，DC-1-GHz低頻放大器。量測結果顯示，整合以上電路所製作之I-arm接收機模組其整體增益大於17.1 dB，最大增益變化量約為3.4 dB，OIP3約為8.9 dBm，input P1 dB約為-19.7 dBm。考量IQ解調功能後之I-arm接收機模組整體增益大於14.4 dB，最大增益變化量約3.2 dB，IIP3為1.9 dBm，系統之Input P1 dB約為-19 dBm。整合後3-5-GHz射頻接收模組具有6 dB上之整體增益，IQ不平衡小於2 dB。最大增益變化量為4.5 dB。

Passive CMOS RFICs based on TSMC 0.18μm CMOS technology which is offered by National Chip Implementation Center (CIC ) and 3-5GHz RF receiver module for UWB radio frequency receiver are mainly researched and fabricated. The RF integrated chips including broadband passive balun and 20GHz T/Rswitch are presented. Both circuits were measured by on-wafer test .
In 3 to 5GHz band, the broadband balun exhibit a amplitude imbalance less than 2.7dB, a phase imbalance less than 9˚ between 172˚ to 189˚, the input return loss higher than 13 dB, S21 > -7dB , S31 > -6dB.
From DC to 20 GHz , the distributed T/R switch exhibit the return loss higher then 10dB at input port and two ouput port , S21 > -3dB and S31 > -3.3dB below 20GHz when operating in on-state, both S21 and S31 less then -45dB below 20GHz when operating in off-state. The isolation is higher then 34dB ,the 1-dB compression points is 13 dBm at 20GHz , and the IIP3 is 25dBm at 20GHz.
In 3 to 5GHz band, the RF receiver module was made by lumped elements , which includes 3-5-GHz UWB LNA , 3-5-GHz BPF , 3-5-GHz mixer , 3.9-4.1-GHz 0°/90° phase shifter , 3-5-GHz equalizer , 3-5-GHz power divider , DC-1-GHz LPF , DC-1-GHz amplifier . The measurement result shows that the I-arm cuircuit of the receiver module exhibit a convertion gain higher then 17.1 dB , gain difference of 3.4 dB , the OIP3 is 8.9 dBm and the P1dB is -19.7 dBm . The I-arm circuit which include IQ demodulation function exhibit a convertion gain higher then 14.4 dB , gain difference of 3.2 dB , the OIP3 is 1.9 dBm and the P1dB is -19 dBm .The 3-5-GHz RF module exhibit a total gain higher then 6 dB, the IQ imbalance lesser then 2 dB , the highest gain difference is 4.5 dB.

[1] http://www.ieee802.org/15/pub/TG3a.html
[2] K. Siwiak and D. McKeown, Ultra-wideband Radio Technology, John Wiley & Sons, 2004.
[3] J. Balakrishnan, A. Batra, and A. Dabak, “A multi-band OFDM system for UWB communication,” in Proc. Conf. Ultra-Wideband Systems and Technologies, Reston, VA, pp. 354–358, 2003.
[4] G. R. Aiello and G. D. Rogerson, “Ultra-wideband wireless systems,” IEEE Microwave Mag., vol. 4, pp. 36–47, Feb. 2003.
[5] P. Heydari, “A Comprehensive study of low-power ultra wideband radio transceiver architectures," IEEE Wireless Communications & Networking Conference (WCNC) , vol. 2, pp. 758-763, Mar. 2005.
[6] M. Kawashima, T. Nakagawa, and K. Araki, “A novel broadBand active balun," Microwave Conference, 2003. 33rd European ,Volume 2, pp. 495-498 vol.2, Oct. 2003.
[7] C.Y Ng, M. Chongcheawchamnan,and I.D Robertson, “Analysis and design of a high-performance planar Marchand balun" Microwave Symposium Digest, 2002 IEEE MTT-S International Volume 1, pp. 113–116 ,June 2002
[8] S.J. Parisi, “180° lumped element hybrid,” Microwave Symposium Digest, 1989., IEEE MTT-S International , pp.1243-1246 vol.3, June 1989.
[9] D. Kuylenstierna and P. Linner, “Design of Broad-Band Lumped-Element Baluns With Inherent Impedance Transformation,” IEEE Transactions on Microwave Theory and Techniques ,Volume: 52 ,Issue: 12 , pp.2739–2745, Dec. 2004
[10] A.M. Pavio, R.H. Halladay,S.D. Bingham,and C.A. Sapashe, “Double balanced mixers using active and passive techniques,” IEEE Transactions on Microwave Theory and Techniques , Volume: 52 ,Issue: 12 , pp.: 2739-2745, ,Dec. 2004.
[11] H. -K. Chiou, H. -H. Lin,and C. -Y. Chang, “Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer,” Microwave and Guided Wave Letters, IEEE ,Volume: 7 ,Issue: 8 , pp.248–250, ,Aug. 1997.
[12] http://www.ty-top.com/news/pdf/20040928e.pdf
[13] M. -C. Yeh, Z. -M. Tsai, R. -C. Liu, K. -Y. Lin, Y. -T. Chang,and H. Wang, “Desin and analysis for a Miniature CMOS SPDT Switch Using Body-Floating Technique to Improve Power Performance,” IEEE Transaction on microwave theoryand techniques, vol. 54, no. 1,Jan. 2006.
[14] F.J. Huang and O. Kenneth, “A 0.5 μm CMOS T/R Switch for 900-MHz Wireless Applications,” IEEE Journal of Solid-state Circuits, VOL. 36, NO. 3, Mar. 2001
[15] Y. Jin and C. Nguyen “A 0.25 mm CMOS T/R switch for UWB wireless communications”, Microwave and Wireless Components Letters, IEEE , pp. 502-504, Aug.2005.
[16] G. -L. Lan, D. -L. Dunn, J. -C. Chen, C. -K. Pao, and D. -C. Wang, “A high performance V-band monolithic FET trandmit-receive switch,” Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988, pp. 99–101, jun. 1988.
[17] Y. Wang, K. Lin, D. Niu, and H. Wang, “A V-band MMIC SPDT passive HEMT switch using impedance transformation networks,” Microwave Symposium Digest, 2001 IEEE MTT-S International, Volume: 1, pp. 253-256,May 2001.
[18] J. Kim, W. Ko ,S.H. Kim, J. Jeong, Y. Kwon, “A high-performance 40-85 GHz MMIC SPDT switch using FET-integrated transmission line structure”, Microwave and Wireless Components Letters, IEEE ,vol 13 ,pp. 505– 507, Dec. 2003.
[19] T. Shimura, Y. Mimino, K. Nakamura, Y. Aoki, and S. Kuroda, “High isolation V-band SPDT switch MMIC for high power use,” IEEE MTT S INT Microwave Symp. DIG. Vol. 3, pp. 245-248. 2001.
[20] M. J. Schindler and A. Morris, “DC–40 GHz and 20–40 GHz MMIC SPDT switches,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 1486–1493, Dec. 1987
[21] K. Yamamoto, T. Heima, A. Furukawa,M. Ono, Y. Hashizume, H. Komurasaki, “A 2.4-GHz-band 1.8V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch,” IEEE J. Solid-State Circuits, vol. 36, pp. 1186–1197, Aug. 2001.
[22] T. Ohnakado, A. Furukawa, M. Ono, E. Taniguchi, S. Yamakawa, K. Nishikawa, T. Murakami, Y. Hashizume, K. Sugahara, and T. Oomori, “A 1.4 dB insertion-loss, 5-GHz transmit/receive switch utilizing novel Depletion-layer-Extended Transistors (DETs) in 0.18 μm CMOS process,” 2002 Symposium on VLSI Technology, 2002. Digest of Technical Papers, pp. 162–163, 2002.
[23] L. Zhenbiao, K. K. O,”A 15-GHz integrated CMOS switch with 21.5-dBm IP1 dB and 1.8-dB insertion loss,” VLSI Circuits, 2004. Digest of Technical Papers, pp.366–367, Jun. 2004.
[24] T. Corrigan and R. Goggin “CMOS Switches Offer High Perfor mAnce in Low Power Wideband Applications” High Frequency Electronics, pp.40-46, Feb. 2004.
[25] K. -Y. Lin , W. -H. Tu, P. -Y. Chen, H. -Y. Chang, R. -B. Wu ,and H. Wang “Millimeter-wave MMIC passive HEMT switches using traveling-wave concept,” IEEE Transactions on Microwave Theory and Techniques , vol 52 , pp.1798–1808, Aug. 2004.
[26] 包克豪，應用於超寬頻無線射頻收發機之CMOS分散式主動射頻積體電路之設計研究，國立成功大學電機工程學系碩士論文，民國九十四年。
[27] NEC Data sheet, “UPD5710TK NEC's WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH “, 2003.
[28] http://grouper.ieee.org/groups/802/15/index.html
[29] http://www.uwbforum.org/index.asp
[30] http://www.freescale.com
[31] http://www.alereon.com
[32] P. Heydari, “A Comprehensive Study of Low-Power Ultra Wideband Radio Transceiver Architectures," IEEE Wireless Communications & Networking Conference (WCNC) , vol. 2, pp. 758-763, Mar. 2005
[33] 劉嘉祺、林福林，“UWB DS-CDMA系統中所使用根餘弦濾波器之Roll-off factor對於時脈誤差影響之模擬與分析”2004數位生活與網際網路科技研討會,中華民國93年11月
[34] D.M. Pozar, Microwave Engineering, John Wiley & Sons, 1998.
[35] D.M. Pozar, Microwave and RF Design of Wireless System, John Wiley & Sons, 2001.
[36] B. Razavi, RF Microelectronics, Prentice Hall, 1998.
[37] G. Gonzalez, Microwave Transistor Amplifiers, Prentice Hall, 1997.