自計算機被發明以來記憶體便是相當重要的電腦元件，其中靜態隨機存取記憶體(SRAM)和動態隨機存取記憶體(DRAM)是計算機系統中速度最快的記憶體元件，他們體積大、耗電高，然而為了高速的運作，多年來持續被人們使用著，藉著不斷的研發和微縮來提高密度和效能。然而近年來新型記憶體的高速發展為記憶體架構帶來了衝擊。新型非揮發性記憶體元件像是相變化記憶體(PCRAM)、磁阻式記憶體(MRAM)、以及電阻式記憶體(RRAM)之研究都顯示出非常大的潛力，他們速度快、體積小而且可以斷電儲存，定能為未來的半導體科技業帶來革新。本篇論文所研究探討的便是電阻式記憶體特性。利用不同氧化鎂銦薄膜置備元件，並探討其應用的可能性。
本實驗所使用到的磁控濺鍍靶材一共有三種: Mg0.2In0.8O、MgIn2O4、MgInO，其中Mg0.2In0.8O是按照元素比例壓靶，後兩者是根據該化合物分子去製作靶材，因此在實驗的第一部分，為了深刻了解這三種靶材所濺鍍的薄膜差異，我們首先對其進行全面的材料分析。分析的第二部分中，我們利用這些薄膜來製備元件並探討電特性得差異。首先是他們在厚度方面的差異性研究結果顯示當氧化層厚度改變時，形成電壓(Forming voltage)會產生顯著的差異，而其他特性則相似。再來我們討論薄膜鎂銦比差異所帶來的影響，結果顯示除了高阻態(HRS)的改變較為明顯，其他特性基本上維持不變。接者我們繼續討論了不同量測限流(Compliance Current)所造成的影響，結果顯示不同限流量測時，會給傳導絲(filament)帶來尺寸上的改變，進而影響元件的高阻態(HRS)、低阻態(LRS)、寫入電壓(Set Voltage)、抹除電壓(Reset Voltage)另外假如提高薄膜中的鎂含量，整體得運作次數和穩定度都會表現得更好。
第三部分中，我們使用不同氧氬比含量的薄膜去做堆疊使，根據地二部份得到的研究結果做基礎，我們可以跟據元件量測得到的開關比(On/Off ratio)得知傳導絲在抹除(Reset)後實際的斷裂位置。而研究結果顯示元件中傳導絲的斷裂位置都會發生在10%氧化層薄膜中。我們可以藉由薄膜堆疊去進一步做控制，若是斷裂位置發生在下電極鉑的位置，元件容易發生各種可靠度方面的問題，反之若是斷裂位置發生在上電極銀附近，元件整體的特性會更好，再加上堆疊的薄膜厚度受到限制，使得斷裂(CFs rupture)區域被控制在堆疊區域，進而增加電阻式記憶體整體的穩定性。

Since the computer architecture is constructed, Static random access memory (SRAM) and dynamic random access memory (DRAM), are the fastest memory in computer systems. Although they are bulky and consume high power, for their high-speed advantage, people seem to have no choice but continue to the use them. Recently, the rapid development of emerging memory has brought an impact to the memory device. Research on non-volatile memory devices such as phase change memory (PCRAM), magnetoresistive memory (MRAM), and resistive memory (RRAM) have shown great potential. They are fast and small high density, and can store data without power, which will surely bring innovation to the semiconductor technology industry in the future. The research in this paper focus on the characteristics of RRAM. We used different magnesium indium oxide (MIO) thin films to fabricate the memory device and explore the possibility of their applications.
There are three sputtering targets used in this experiment: Mg0.2In0.8O, MgIn2O4 and MgInO. Among them, Mg0.2In0.8O target is fabricated based on the ratio of elements, and the rest are based on the compound molecule. Therefore, in the first part of the experiment, we show the comprehensive material analysis to understand the difference of the films. In the second part, we use these films to fabricate the RRAM device. The first comparison is about the thickness effect. The results show that when the thickness of the oxide layer changes, the forming voltage will have a significant difference, while other characteristics are similar. Then, we discuss the influence of the film with different Mg/In ratio. The results show that except for the obvious change of high resistance state (HRS), other characteristics remain basically unchanged. Next, we continued to discuss the impact of different compliance current. The result shows that different compliance current will bring dimensional changes to the conductive filament, and it will affect the high resistance state (HRS) and low resistance state (HRS) of the device. In addition, if the oxide Mg ratio is increased, the overall operation times and stability will be better.
In the third part, we fabricate stacking RRAM with different Mg ratio film. Based on the results obtained in the second part, we can learn that different device will have its own On/Off ratio. We use this characteristic to ensure the RRAM filament rupture place. The results show that the rupture position of the conductive filaments (CFs) will all occur in the 10% oxide film and by this we can control the rupture side by the stacking way. If the rupture position occurs near the bottom electrode (Pt), the device shows several various reliability problems. On the contrary, if the rupture position occurs near the top electrode (Ag), the overall characteristics of the device will be better. In addition, the thickness of the stacked film is limited, so that the rupture area is limited in the stacked area, thereby increasing the overall stability of the resistive memory.

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