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研究生: 林暉然
Lin, Hwei-Ran
論文名稱: 鍺酸鹽YXInGe2O7:R1-X(R = Eu, Tb, Tm)之螢光特性研究
The Photoluminescence Properties of YXInGe2O7:R1-X(R = Eu, Tb, Tm)
指導教授: 張炎輝
Chang, En-Phei
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年: 2006
畢業學年度: 94
語文別: 中文
論文頁數: 101
中文關鍵詞: 螢光粉光致發光
外文關鍵詞: Phosphor, Photoluminescence
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  • 本論文主要目的為開發新型氧化物螢光材料並研究其特性,在主體方面採用Thortveitite結構之YInGe2O7為基礎,分別添加稀土金屬離子Eu3+、Tb3+與Tm3+當作活化劑發光中心進而觀察其螢光發光特性。

    首先,觀察到YInGe2O7主體晶格自身可發出位於457nm之藍白光,其主體晶格吸收帶位於257nm,與後續摻雜之Eu3+、Tb3+離子之f-d躍遷激發波長有重疊的現象。

    由實驗結果得知,採用高能球磨法製成之YInGe2O7:Eu3+粉體在1000℃開始成相,而在1200℃時可得最佳結晶性。而在464nm光源的激發下,YInGe2O7:Eu3+粉體發出屬於Eu3+離子之電偶極躍遷(5D0→7F2)的紅光,而其位置落於611nm,顯示其Eu3+離子在晶格當中佔據非對稱中心位置,此可由YInGe2O7主體晶格經由Rietveld精算後所輸出之3D立體晶格圖來說明,可知Eu原子取代Y原子所處的位置為一扭曲之八面體位置。

    在YInGe2O7:Tb3+系列中,隨著Tb3+離子添加量的提高,其空間群由Thortveitite結構之C2/m逐漸轉變為Thortveitite-like結構之C2/c,由於YInGe2O7:Tb3+系列之原子排列方式更為複雜,導致發生濃度淬滅效應的極限更往上提升,形成所謂化學計量比螢光粉體。並從放射光譜得知晶格場造成Tb3+離子之f-d能階在組態座標上水平移動,而使其在不同激發波長下其強度呈現相反趨勢。

    在YInGe2O7:Tm系列中,以355nm為激發波長,其發光波長落於453nm,其發光強度在摻雜量為4%時達最高,屬於藍白光。

    The object of this study is to search new oxide based phosphors. The Thortveitite crystallite,YInGe2O7, was selected as the host material and three rare earth ions, Eu3+、 Tb3+ and Tm3+ , were introduced as activators.
    The host material, YInGe2O7 , under the excitation of host absorption band at 257nm, which overlap the f-d transition band of Eu3+ and Tb3+ ions, emit blue white light.
    The experiment results demonstrated that the vibrating milled YInGe2O7:Eu3+ begins to crystallize around 1000℃. Under the excitation of 464nm, the calcined powders revealed red luminescence centered at 611nm due to 5D0→7F2 electric dipole transition. And Rietveld analysis confirm that the Y ions site is a twisting site.
    Furthermore, in the YInGe2O7:Tb3+ systems, as the Tb3+ concentration increases, the structure will change from the Thortveitite to Thortveitite-like structure. The more complicated atom-arranged Thortveitite-like structure will raise the critical concentration-quenching point and form the stoichiometric phosphors. And the crystal-field will cause the f-d transition level shift in the configurational coordinate diagram.
    Finally, in the YInGe2O7:Tm3+ systems, under the excitation of 355nm, the calcined powders emit blue luminescence centered at 453nm. The maximum PL intensity was obtained for 4 mol% concentration of Tm3+ in YInGe2O7.

    目 錄 口試合格證明 摘要 I Abstract II 誌謝 III 目 錄 IV 表目錄 VII 圖目錄 VIII 第一章 緒論 1 1-1 前言 1 1-2 研究動機與目的 2 第二章 理論基礎與文獻回顧 3 2-1 螢光材料簡介 3 2-2 螢光材料的分類與應用 3 2-2-1 螢光材料的分類 3 2-2-2 激發源種類及其應用 4 2-3 發光原理 6 2-3-1史托克位移(Stokes Shift) 6 2-3-2 螢光(Fluorescence)與磷光(Phosphorescence) 8 2-4 固態材料中的發光 8 2-4-1 本質型發光(Intrinsic Luminescence) 9 2-4-2 外質型發光(Extrinsic Luminescence) 9 2-4-2-1 侷限型(Localized Type)發光材料 9 2-4-2-2 非侷限型(Unlocalized Type)發光材料 10 2-5 影響發光行為與效率的因素 10 2-5-1 濃度淬滅效應(Concentration Quenching) 10 2-5-2 熱消淬效應(Thermal Quenching) 10 2-6 螢光體的組成與選擇 11 2-6-1 主體晶格的選擇 11 2-6-2 活化劑的選擇 11 2-6-3 抑制劑的避免 11 2-7 Thortveitite結構與Thortveitite-Like結構介紹 11 第三章 實驗方法與步驟 24 3-1 實驗流程 24 3-2 化學藥品 24 3-3 成分與結構分析 25 3-3-1 X光繞射分析(X-Ray Diffraction Analysis) 25 3-3-2 掃瞄式電子顯微鏡(Scanning Electron Microscope)分析與EDS(Energy Dispersive Spectrometer)分析 25 3-3-3 熱差/熱重(Difference Thermal Analysis/Thermal Gradient Analysis)分析 25 3-4 性質測定 25 3-4-1 螢光光譜儀(Photoluminescence,PL) 25 3-4-2 吸收光譜(Absorption Spectrometer) 26 3-4-3 色度座標分析(Analysis of C.I.E Chromaticity Diagram) 26 第四章 結果與討論 28 4-1 以固相反應法合成YInGe2O7 28 4-1-1 熱差-熱重分析(DTA-TGA) 28 4-1-2 .X光繞射(XRD)分析 29 4-1-3 掃瞄式電子顯微鏡(SEM)分析 29 4-1-4 紫外光-可見光吸收光譜(UV-Visible Absorption Spectrum)分析 30 4-1-5 光致發光特性(Photo-Luminescence Properties) 30 4-1-6 殘光時間(Decay Time)分析 31 4-1-7 .Rietveld結構分析 31 4-1-8 色度座標分析 32 4-1-9 結論 32 4-2 以固相反應法合成YInGe2O7:Eu 44 4-2-1 X光繞射(XRD)分析 44 4-2-1-1 Eu摻雜濃度對結構的影響 44 4-2-1-2 煆燒溫度對結構的影響 44 4-2-2 SEM表面型態分析 45 4-2-3 吸收光譜 (Absorption Spectrum) 45 4-2-4 光致發光特性 (Photo-Luminescence Properties) 46 4-2-4-1 激發與發射光譜 (Excitation and Emission Spectrum) 46 4-2-4-2 煆燒溫度對發光強度的影響 48 4-2-4-3 Eu3+之摻雜濃度對發光強度的影響 48 4-2-5 光致發光的衰變行為與殘光時間 49 4-2-5-1 摻雜濃度對殘光時間的影響 49 4-2-5-2 煆燒溫度對殘光時間的影響 51 4-2-6 色度座標圖 51 4-2-7 結論 51 4-3 以固相反應法合成YInGe2O7:Tb螢光粉體 68 4-3-1 X光繞射(XRD)結構分析 68 4-3-1-1 Tb3+摻雜濃度對結構的影響 68 4-3-1-2 煆燒溫度對結構的影響 68 4-3-2 吸收光譜(Absorption Spectrum) 69 4-3-3 光致發光特性(Photo-Luminescence Properties) 69 4-3-3-1 激發與發射光譜 (Excitation and Emission Spectrum) 69 4-3-3-2 Tb3+摻雜濃度對發光強度的影響 71 4-3-3-3 煆燒溫度對發光強度的影響 72 4-3-4 衰變行為與殘光時間 72 4-3-5 色度座標 74 4-3-6 結 論 74 4-4 以固相反應法合成YInGe2O7:Tm螢光粉體 87 4-4-1 X光繞射(XRD)結構分析 87 4-4-1-1 Tm摻雜濃度對結構的影響 87 4-4-1-2 煆燒溫度對結構的影響 87 4-4-2光致發光特性(Photo-Luminescence Properties) 88 4-4-2-1 激發與發射光譜 (excitation and emission spectra) 88 4-4-2-2 Tm3+摻雜濃度對發光強度的影響 88 4-4-3 色度座標 89 4-4-4 結 論 89 4-5 綜合討論 96 第五章 總結論 98 參考文獻 99

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