本論文以設計與研製運用在2.4GHz ISM頻帶的 CMOS線性化功率放大器，並利用兩種線性器架構去提升功率放大器的線性度。論文前半段在說明CMOS功率放大器相關的設計理論與設計技巧；後半段以實際線性器電路為例，以線性化偏壓電路線性器與輔助電晶體補償非線性因素線性器兩種電路架構下，去提升功率放大器的線性度。
在線性化偏壓電路為線性器架構下，可提升輸出級的閘極電壓位準由0.5V到0.68V，功率增益約12.5dB，功率增加效率(PAE)大於28%，P1dB壓縮點增加0.7 dBm變成12.9dBm、第2階與第3階諧波的交互調變失真分析(IMD)提升約5dB以上的線性度。輔助電晶體補償非線性因素線性器架構下，功率增益約20.7dB，功率增加效率(PAE)大於26%，P1dB壓縮點增加0.43 dBm變成14.035dBm、第2階與第3階諧波的交互調變失真分析(IMD)約有6dB~24dB以上的線性度提升，線性度改善的很明顯。

This thesis presents a 2.4GHz ISM-band CMOS linearized power amplifier. Useing two frames of linearization to improve linearity of power amplifier. This thesis consists of two part. Part I introduced the theory and technique of design about power amplifier. Part II are examples of linearized circuit, which will use the frames of linearized bias circuit and auxiliary transistor to compensate nonlinear factors to improve linearity of power amplifier.
In the frames of linearized bias circuit, the linearized bias circuit can increase the voltage of gate form 0.5V to 0.68V. The designed results are 12.5dB in power gain, 28% in PAE, P1dB rising up from 0.7dBm to 12.9dBm, and IMD of 2-oder＆3-order harmonic to improve linearity above 5dB. In the frames of auxiliary transistor to compensate nonlinear factors, the designed results are 20.7dB in power gain, 26% in PAE, P1dB rising up from 0.43dBm to 14.035dBm, and IMD of 2-oder＆3-order harmonic to improve linearity above 6dB~24dB. The improving linearity of circuit is conspicuous.

[1]袁杰，高電電路分析與設計(二)，全威圖書有限公司，2001。
[2]Steve C. Cripps, RF Power Amplifier for Wireless Communications, Artech House, 1999.
[3]陳宜隆，5.7GHz UNII-Band頻帶無線通訊之MMIC功率放大器級射頻收發模組之設計製作，國立成功大學電機工程學系碩士論文，民國九十年。
[4]CIC教育訓練課程，MMIC Design，民國九十年。
[5]Ulrich L.Rohde, David P.Newkrik, RF/Microwave Circuit Design for Wireless Applications, Wiley, 2000.
[6]Peter B. Kenington, High-Linearity RF Amplifier Design, 2000
[7]Janinckx, Michel S.J.Steyaert ,”A 1.8GHz CMOS Low-Phase-Noise VCO with Prescaler”, IEEE Solid-State circuit, pp.1474-1482,1995.
[8]Giry, A.; Fourniert, J.-M.; Pons, M,“A 1.9GHz Low Voltage CMOS Power Amplifier For Medium Power RF Application”, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp:121-124 , 2000
[9]Chao-Chih Hsiao; Chin-Wei Kuo; Yi-Jen Chan,“Integrated CMOS Power Amplifier and Down Converter for 2.4GHz Bluetooth Applications”, IEEE, Radio and Wireless Conference, pp.29 -32, 2001.
[10]Asbeck, P.; Fallesen, C.,“A 29dBm 1.9GHz Class B Power Amplifier in a digital CMOS Process”, IEEE Electronics, Circuits and Systems, pp474 -477, 2000.
[11]Chen, Y.J.E.; Hamai, M.; Heo, D.; Sutono, A.; Yoo, S.; Laskar, J.,“RF Power Amplifier Integration in CMOS Technology”, IEEE Lightwave Technology, pp545-548, 2000.
[12]TSMC, TSMC 0.18μm mixed signal 1P6M salicide 1.8V/3.3V RF SPICE model,2003
[13]T.Yoshimasu, M.Akagi, N.Tanba and S.Hara,”An HBT MMIC Power Amplifier with an Integrated Diode Linearizer for Low-Voltage Portable Phone Applications”,IEEE Journal of Solid-State Circuits, Vol. 33, NO.9, PP.1290-1296,1998.
[14]Y.S. Noh, C. S. Park, ”Linearized InGaP/GaAs HBT MMIC power amplifier with active bias circuit”, IEEE Radio and Wireless Conference, pp.249–252, 2001.
[15]Y.S. Noh, T.W. Lee; C. S. Park,” Linearized high efficient HBT power amplifier module for L-band application”, IEEE GaAs Digest, PP.197-200, 2001.
[16]Chul Soon Park; Youn Sub Noh, “PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit”, IEEE Solid-State Circuits, pp.1096 –1099,2002.
[17]顏呈機，2.4GHz ISM頻帶收發機射頻前端CMOS RFIC及使用二極體線性器CMOS PA之研製，國立成功大學電機工程學系碩士論文，民國九十一年。
[18]Imanishi, K.; Iwai, T.; Joshin, K.; Ohara, S.; Yamada, H.; Yamaguchi, Y, “Self-linearizing technique for L-band HBT power amplifier: effect of source impedance on phase distortion”, IEEE Microwave Theory and Techniques, pp.2398–2402, 1996.
[19]Hau, G.; Iwata, N.; Nishimura, T.B.;”High efficiency, wide dynamic range variable gain and power amplifier MMICs for wideband CDMA handsets”, IEEE Microwave and Wireless Components Letters, pp.1315, 2000.
[20]Bonkee Kim; Jin-Su Ko; Kwyro Lee,”A New Linearization Technique for
MOSFET RF Amplifier Using Multiple Gated Transistor”, IEEE Microwave and Guided Wave Letters, pp:371–373, 2000.
[21]Tanaka, S.; Behbahani, F.; Abidi, A.A.”A Linearization Technique for CMOS RF Power Amplifier“ IEEE, VLSI Circuits, pp:93 -94, 1997.
[22]Sin Sai Weng; Lai Keng Chong; Chiang Kuok Vai; Choi Wai Wa; Tam, K.W.;
Martins, R.P., ”An Analytical Linearization Method for CMOS MMIC Power Amplifier Using Multiple Gated Transistors”, IEEE ASIC, pp:670 -672, 2001.
[23]Y.S. Noh, C. S. Park, ”Linearized InGaP/GaAs HBT MMIC power amplifier with active bias circuit”, IEEE Radio and Wireless Conference, pp.249–252,2001.