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研究生：	劉信佑 Liu, Hsin-Yu
論文名稱：	新穎綠光微米發光二極體磊晶技術 Novel Green Micro-LEDs Epitaxy Technology
指導教授：	張守進 Chang, Shoou-Jinn
學位類別：	博士 Doctor
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2026
畢業學年度：	114
語文別：	英文
論文頁數：	109
中文關鍵詞：	綠光微發光二極管、磊晶結構優化、V型坑工程、量子限制斯塔克效應、載流子傳輸、內量子效率、外量子效率、金屬有機化學氣相沉積
外文關鍵詞：	Green Micro-LEDs, Epitaxial structure optimization, V-shaped pits engineering, Quantum confinement Stark effect, Carrier transport, Internal quantum efficiency, External quantum efficiency, Metal-organic chemical vapor deposition
相關次數：	點閱：16 下載：0
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Micro-LEDs顯示技術因其自發光、高亮度、高能效等優勢被認為是最具前景的下一代顯示技術，但GaN基綠光LEDs長期受制於「綠色間隙」效應導致的效率瓶頸。本論文針對綠光Micro-LEDs從磊晶結構設計與生長條件調控入手，系統地開展了V型坑工程、量子井能帶調控、載流子輸運優化等方面的研究。

在V型坑勢壘優化方面，本研究創新性地利用勢壘生長過程中氫氣流量（54.5 sccm）的精確調控，通過差異化蝕刻作用將側壁勢壘高度從213.9 meV提升至231.9 meV，同時完全消除小尺寸V型坑，使Micro-LEDs器件峰值外量子效率達到44.8%，相比傳統工藝提升37.8%。在勢壘層材料優化中，通過引入Al₀.₀₂Ga₀.₉₈N勢壘層與V型坑工程的協同作用，成功引導更多電洞經側壁路徑注入深層量子阱，使Micro-LEDs器件峰值外量子效率達到26.24%，相比傳統工藝提升17.8%使效率，其外部亮度衰減比例由40.06%降低至16.73%。針對低電流密度應用特點，提出的去除p-AlGaN電子阻擋層策略使電洞注入勢壘從733 meV降至699 meV，峰值外量子效率達31.5%，峰值電流密度降至0.5 A/cm²，SRH非輻射複合係數降低72%。

通過系統比較和分析不同優化技術的物理機制、性能提升及應用場景，本研究建立了 Micro-LEDs 的差異化設計框架，為多技術協同優化提供了理論指導。研究成果不僅加深了對V-pits 雙重功能的物理認識，同時還提供了外延結構設計的系統方法，對促進氮化鎵綠光 Micro-LEDs工業應用具有重要的理論價值和實際意義。

Micro-LEDs display technology is considered to be the most promising next-generation display technology due to its advantages of self-illumination, high brightness, and high energy efficiency. However, GaN-based green LEDs has long been subject to the efficiency bottleneck caused by the "green gap" effect. Aiming at the performance optimization requirements of green Micro-LEDs and systematically carries out the research on V-pits engineering, quantum well bandgap regulation, and carrier transport optimization from the perspective of epitaxial structure design and growth process regulation.

In terms of the V-pits barrier optimization, this study creatively used the precise control of hydrogen flow rate (54.5 sccm) during the barrier growth process, increased the side-wall barrier height from 213.9 meV to 231.9 meV through differential etching, and completely eliminated the small-size V-pits. The peak external quantum efficiency of the Micro-LEDs device reached 44.8%, which was 37.8% higher than that of the traditional process. In the material optimization of the barrier layer, the synergistic effect of Al₀.₀₂Ga₀.98N barrier layer and the V-shaped pits engineering was introduced, which successfully led more hole to be injected into the deep quantum well through the sidewall quantum well, enhance the peak external quantum efficiency of the Micro-LEDs device to 26.24%, which was 17.8% higher than that of the conventional one, and also reducing the efficiency droop ratio from 40.06% to 16.73%. For the application characteristics of low current density, the proposed strategy of removing the p-AlGaN electron blocking layer reduces the hole injection barrier from 733 meV to 699 meV, the peak external quantum efficiency reaches 31.5%, the peak current density is reduced to 0.5 A/cm², and the SRH non-radiative recombination coefficient is reduced by 72%.

By systematically comparing and analyzing the physical mechanism, performance improvement and application scenarios of different optimization techniques, this study establishes a differentiated design framework for Micro-LEDs, which provides theoretical guidance for multi-technology collaborative optimization. The research results not only deepen the physical understanding of the dual function of V-pits, but also provide a systematic methodology for the design of epitaxy structure, which has important theoretical value and practical significance for promoting the industrial application of GaN-based green light Micro-LEDs.

摘要	I
Abstract	III
Acknowledgement	V
Contents	VI
Table Captions	X
Figure Captions	XI
Chapter 1	1
Introduction	1
1 Research background and significance	1
1.1 Development and application prospect of Micro-LEDs	1
1.2 Key bottlenecks faced by green Micro-LEDs	2
1.3 Academic value and application significance of this study	3
2 Review of research status at home and abroad	4
2.1 Optimization of carrier recombination in active region	4
2.2 Weakening of stress and polarization effect	5
2.3 V-shaped pits engineering and its dual functions	6
2.4 Optimization of MOCVD growth process	8
2.5 Optimization and removal strategy of electron blocking layer	9
3 Research objectives and paper structure arrangement	11
3.1 Research objectives	11
3.2 Paper structure arrangement	12
Chapter 2	14
Theoretical basis and technical background	14
1 InGaN/GaN material system and energy band structure	14
1.1 InGaN material characteristics	14
1.2 Basic properties of GaN materials	15
1.3 InGaN/GaN heterogeneous structure and bandgap arrangement	16
2 Polarization effect and quantum confinement Stark effect	17
2.1 Spontaneous polarization and piezoelectric polarization	17
2.2 Quantum confinement Stark effect and its influence	18
2.3 Shielding effect by and band-filling effect by carrier	19
3 Carrier transport and recombination mechanism	19
3.1 Radiation recombination process	19
3.2 Non-radiative recombination mechanism	20
3.3 Carrier transport and distribution	21
4 Micro-LEDs chip characteristics	22
4.1 Size effect	22
4.2 Characteristics of operating current density	23
4.3 Current spreading and thermal management	23
5 Summary	24
Chapter 3	25
Quantum barrier optimization based on hydrogen flow regulation	25
1 Research ideas and background	25
2 Mechanism of hydrogen in the growth of MQWs	26
3 Influence of V-pits side wall potential barrier on dislocation and non-radiative recombination	29
4 Experimental design and method	32
5 Experimental results and analysis	35
5.1 Influence of hydrogen flow rate on epitaxy by LTPL	35
5.2 Precise control of the potential barrier height of the side wall of v -pits by CL measurement	38
5.3 Comprehensive characterization of optoelectronic performance of green u-LEDs	42
6 Summary	47
Chapter 4	49
Optimization of AlGaN barrier and V-pits engineering	49
1 Research ideas and background	49
2 Mechanism of action of AlGaN barrier on carrier transport	50
3 Effect of V-pits ratio on efficiency droop	51
4 Experimental results and analysis	56
4.1 Systematic comparison of photoelectric performance	56
4.2 In-depth analysis of carrier recombination mechanism by LTPL	58
4.3 Device reliability and thermal management performance	59
5 Summary	60
Chapter 5	62
Removal of p-AlGaN electron blocking layer (EBL) for low current density applications	62
1 Research Ideas and Background	62
2 Theoretical analysis of EBL removal	63
2.1 Evolution mechanism of energy band structure from simulation	63
2.2 The physical mechanism of the weakening of polarization effect	65
3 Experimental design and methods	66
3.1 Sample structure design and epitaxy preparation	66
3.2 Comprehensive characterization test method	67
4 Experimental Results and Analysis	68
4.1 I-V Curve analysis of EQE-J characteristics	68
4.2 ABC model from EQE curve fitting	69
4.3 Emission wavelength under different current density	71
4.4 Comprehensive evaluation of crystal quality by Raman and RSM	72
4.5 Surface temperature distribution performance analysis	73
5 Summary	75
Chapter 6	77
1 Conclusion	77
2 Future research directions	82
References	83
                                    

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