在近幾年，量子電腦與高效能運算電腦 盛行， 需要有良好的低溫資料儲存技術來支援龐大的運算量。但是，量子電腦 以及高效能運算電腦在目前是適合操作在低溫環境下，量子電腦是為了讓 qubit有更低的熱擾動影響，而高效能運算電腦為的是追求更佳的效能。在這前提下，需要發展良好的低溫記憶體元件來輔助量子電腦和高效能運算電腦。
在此篇研究中，我們使用了HfZrO2 (HZO)和 Yttrium-doped HfZrO2的鐵電薄膜電容 。因為鐵電材料記憶體是最有前途的儲存設備，他擁有 低功耗、 切換速度快速 (ns 範圍的切換時間 )、耐久度高和長達 10年的保留時間的優點。
為了了解HfZrO2 和 Yttrium-doped HfZrO2的鐵電薄膜電容在低溫下的切換速度的特性，在本研究使用了 NLS的量測方式，去探討不同的供給電壓 、溫度以及是否參雜 Yttrium會如何影響鐵電薄膜電容的切換速度。

In recent years, quantum computers and high-performance computing (HPC) systems have gained popularity, necessitating advanced cryogenic data storage technologies to support the immense computational workload. Quantum computers require operation in cryogenic temperature environments to minimize thermal disturbances on qubits, while HPC systems benefit from operating at low temperatures to achieve better performance. Consequently, developing effective cryogenic memory devices is crucial to support both quantum computers and HPC systems.
In this study, we utilized ferroelectric thin-film capacitors made of HfZrO2 (HZO) and Yttrium-doped HfZrO2. Ferroelectric memory devices are among the most promising storage solutions due to their low power consumption, fast switching speeds (in the nanosecond range), high endurance, and data retention capability of up to 10 years.
To understand the switching speed characteristics of HfZrO2 and Yttrium-doped HfZrO2 ferroelectric thin-film capacitors at cryogenic temperatures, we employed the Nucleation Limited Switching (NLS) measurement method. This study explores how different applied voltages, temperatures, and Yttrium doping levels affect the switching speed of ferroelectric thin-film capacitors.

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