本論文分成三個部分，第一個部分是利用共濺鍍系統成長氧化鋅與氧化錫為主動層之薄膜電晶體。透過調整氧化鋅以及氧化錫的濺鍍功率能得到不同能隙的氧化鋅銦薄膜，並將其應用於紫外光光電晶體上。第二部分是針對銦鋁鋅氧化物的底閘極式薄膜電晶體的製備以及銦鋁鋅氧化物薄膜的分析。我們在玻璃基板上利用熱蒸鍍法沉積鋁作為下電極，而介電層則是透過化學氣相沉積法沉積200奈米的二氧化矽，接著利用磁控濺鍍調變濺鍍時通入不同比例的氧流量，我們可以沉積出不同氧流比的銦鋁鋅氧化物薄膜作為主動層，最後在利用熱蒸鍍法鍍鋁作為汲極以及源極。透過通入適當的氧流比輔助濺鍍，可以有效減少主動層內的氧空缺並且有效的改善元件的電特性，包含載子遷移率、開關電流比、臨界電壓以及次臨界擺幅都能有顯著的改善。
第三部分，我們使用原子層沉積法分別沉積高品質的氧化鋁以及二氧化鉿做為閘極介電層來製作薄膜電晶體，元件的主動層依然是使用銦鋁鋅氧化物半導體薄膜。在使用氧化鋁作為介電層時，我們將製備好的元件拿來跟原本的二氧化矽介電層比較，雖然場效遷移率並沒有太大的變化，但是開關電流比因為關電流有效的下降，而產生顯著的增加，次臨界擺幅也有明顯變小，表示介面跟主動層之間的介面缺陷可以透過原子層沉積法沉積的氧化鋁改善。透過來回施壓閘極電壓可以發現，使用氧化鋁作為介電層會比二氧化矽作為元件介電層有更小的臨界電壓偏移，這也佐證了介面缺陷的確能有效減少。接著將這兩種不同絕緣層的元件拿來做為光電晶體使用，分別照射400奈米到250奈米的光後，我們計算照光後元件的響應、拒斥比，以及外部量子效率，發現透過原子層沉積法製作出來的光電晶體比起傳統的化學沉積法表現更好，具有應用在光電元件的潛力。另外，在製作以二氧化蛤為介電層的元件時，我們將做好的元件在大氣下退火一個小時，發現比起沒有退火的元件，在200度下退火的電晶體有比較好的電特性，次臨界擺幅從1.37V/dec下降到0.21V/dec，開關電流比提升了一萬倍，而照光後的光響應、拒斥比都獲得大幅的改善。
透過調變適當的氧流比並且搭配合適的絕緣層還有溫度條件，我們發現銦鋁鋅氧化物薄膜是具有相當的潛力，可以有機會在未來被使用在未來的光電產業裡面。

There are three parts of this Dissertation. The first part is depositing zinc oxide (ZnO) and tin oxide (SnO2) as an active layer in a thin-film transistor (TFT) by the co-sputtered system. By optimizing the deposition power of ZnO and SnO2 can fabricate zinc tin oxide (ZTO) thin film with different bandgaps and apply to UV sensing applications. The second part is fabricating indium aluminum zinc oxide (IAZO) bottom gate TFT and analyzing IAZO thin film. The Al bottom gate is deposited on the cleaned quartz substrate through thermal evaporation. The dielectric is 200 nm SiO2 which is prepared by plasma enhanced chemical vapor deposition (PECVD). The IAZO thin film as an active layer is prepared by RF magnetic sputtering system and the oxygen/argon ratio is optimized during the process. Finally, the Al source and drain contact are finished through thermal evaporation. The electrical properties including the field mobility, Ion/Ioff, threshold voltage, and subthreshold swing are improved by optimizing an appropriate O2/Ar ratio. That is owing to the reduction of the oxygen vacancies between the interface of the active layer and dielectric layer.
The third part is applying atomic layer deposition to deposit a high-quality dielectric layer including Al2O3 and HfO2 as a dielectric layer in TFT. The active layer still uses IAZO thin film with a 2% oxygen ratio. We compare the device with Al2O3 and SiO2 dielectric layers. Although the field mobility doesn’t receive significant changing, the Ion/Ioff increases owing to the lower off current. The subthreshold swing also decreases which indicates the interface state between the active layer and dielectric layer can be modified by depositing the Al2O3 dielectric layer through ALD. The transfer curve when gate voltage sweeping forward and backward under constant drain voltage reveals that the device with Al2O3 dielectric layer has a lower threshold voltage shift. It can prove the interface state is decreasing. Then these two devices are measured under the photo illumination. The wavelength varies from 400 nm to 250 nm. The photoresponse, response time, rejection ratio and quantum efficiency are calculated and compared to each other. The device with ALD dielectric layer has a higher photoresponse than traditional PECVD. Furthermore, the device with the HfO2 dielectric layer through ALD is annealed under 200oC for an hour. The device has a better electrical performance by post-annealing treatment. SS. decreases from 1.37 V/dec to 0.21 V/dec and Ion/Ioff increase from 104 to 108. The photoresponse such as responsivity and rejection ratio also has significant improvement.
Optimizing a moderate oxygen flow ratio and choosing an appropriate dielectric layer and annealing condition. We find that IAZO TFT has a high potential to apply in the photoelectric industry.

chap1

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[9] V. P. Verma, D. H. Kim, H. Jeon, M. Jeon, and W. Choi,”Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum.”Thin Solid Films. vol. 516, no. (23), pp. 8736-8739, 2008
[10] W. Lee, R. P. Dwivedi, C. Hong, H. W. Kim, N. Cho, and C. Lee,”Enhancement of the electrical properties of Al-doped ZnO films deposited on ZnO-buffered glass substrates by using an ultrathin aluminum underlayer.” J. Mater. Sci. vol. 43, pp. 1159-1161, 2008
[11] C. Lee, R. P. Dwivedi, W. Lee, C. Hong, W. I. Lee, and H. W. Kim, “IZO/Al/GZO multilayer films to replace ITO films.”J. Mater. Sci. Mater. Electron. vol. 19, pp. 981-985, 2008
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[17] J. G. Um, M. Mativenga, and J. Jang,”Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress.” Appl. Phys. Lett. vol. 103, no. (3), 033501, 2013
[18] J. Cai, D. Han, Y. Geng, W. Wang, L. Wang, S. Zhang, Y. Wang,“High-performance transparent AZO TFTs fabricated on glass substrate.” IEEE Trans. Electron Dev. vol. 60, no. (7), pp. 2432-2435, 2013
[19] L. Yue, H. Pu, H. Li, S. Pang, and Q. Zhang. ”Dip-coated Al–In–Zn–O thin-film transistor with poly-methylmethacrylate gate dielectric.” J. Phys. D vol. 46, no. (44), 445106, 2013
[20] C. H. Ahn, B. H. Kong, H. Kim, H. K. Cho, “Improved electrical stability in the Al doped ZnO thin-film-transistors grown by atomic layer deposition.” J. Electrochem. Soc. vol. 158, no. (2), pp. H170-H173, 2011
[21] K. Jang, H. Park, S. Jung, N. Van Duy, Y. Kim, J. Cho, S. Park,”Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators.” Thin Solid Films. vol. 518, no. (10), pp. 2808-2811, 2010
[22] J. Zhang, X. Li, J. Lu, N. Zhou, P. Guo, B. Lu, and Z. Ye,” Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors.” RSC Adv. (2014) vol. 4, no. (7), 3145-3148, 2014
[23] J. Zhang, J. Lu, Q. Jiang, B. Lu, X. Pan, L. Chen, N. Zhou,”Stability of amorphous InAlZnO thin-film transistors.” J. Vac. Sci. Technol. vol. 32, no. (1), 010602, 2014
[24] Z. Ye, S. Yue, J. Zhang, X. Li, L. Chen, and J. Lu, “Annealing treatment on amorphous InAlZnO films for thin-film transistors.” IEEE Trans. Electron Dev. vol. 63, no. (9), pp. 3547-3551, 2016
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chap5

[1] P. F. Carcia, R. S. McLean, M. H. Reilly, and Jr, G Nunes, “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering.” Appl. Phys. Lett., vol. 82, no. 7, pp. 1117-1119, 2003
[2] P. M. Fortunato, E. M., Barquinha, A. C. M. B. G. Pimentel, A. M. Goncalves, A. J. Marques, L. M. Pereira, and R. F. Martins, “Fully transparent ZnO thin‐film transistor produced at room temperature.” Adv. Mater., vol. 17, no. 5, pp. 590-594, 2005.
[3] E. M. Fortunato, P. M. Barquinha, A. C. Pimentel, A. M. Gonçalves, A. J. Marques, R. F. Martins, and L. M. Pereira, “Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature.” Appl. Phys. Lett., vol. 85, no. 13, pp. 2541-2543, 2004
[4] C. P. Yang, S. P. Chang, S. J. Chang, T. H. Chang, C. J. Chiu, Y. L.Tsai, and T. Y. Liao, “Properties of Ga-Zn-O Ultraviolet Phototransistors Using Radio-Frequency Magnetron Co-Sputtering Method.,” Nanosci. Nanotechnol. Lett., vol. 10, no. 3, pp. 396-402, 2018
[5] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.” Nature, vol. 432, no. 7016, pp. 488, 2004
[6] W. T. Chen, and H. W. Zan, “High-performance light-erasable memory and real-time ultraviolet detector based on unannealed indium–gallium–zinc–oxide thin-film transistor.” IEEE Electron Device Lett., vol. 33, no.1, pp. 77-79, 2012
[7] T. H. Chang, C. J. Chiu, S. J. Chang, T. Y. Tsai, T. H. Yang, Z. D. Huang, and W. Y.Weng,” Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric.” Appl. Phys. Lett., vol. 102, no.22, 221104, 2013
[8] W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, and C. C. Lee, “Oxygen-dependent instability and annealing/passivation effects in amorphous In–Ga–Zn–O thin-film transistors.” IEEE Electron Device Lett., vol. 32, no.11, pp. 1552-1554, 2011.
[9] J. G. Um, M. Mativenga, and J. Jang, “Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress.” Appl. Phys. Lett., vol. 103, no.3, 033501, 2013
[10] J. Cai, D. Han, Y. Geng, W. Wang, L. Wang, S. Zhang, Y. Wang, “High-performance transparent AZO TFTs fabricated on glass substrate.” IEEE Trans. Electron Dev., vol. 60, no.7, pp. 2432-2435, 2013
[11] L. Yue, H. Pu, H. Li, S. Pang, and Q. Zhang, “Dip-coated Al–In–Zn–O thin-film transistor with poly-methylmethacrylate gate dielectric.” J. Phys. D., vol. 46, no.44, 445106, 2013
[12] C. H. Ahn, B. H. Kong, H. Kim, H. K. Cho, “Improved electrical stability in the Al doped ZnO thin-film-transistors grown by atomic layer deposition.” J. Electrochem. Soc., vol. 158, no.2, pp. H170-H173, 2011
[13] K. Jang, H. Park, S. Jung, N. Van Duy, Y. Kim, J. Cho, S. Park, “Optical and electrical properties of 2wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators.” Thin Solid Films., vol. 518, no.10, pp. 2808-2811, 2010
[14] J. Zhang, X. Li, J. Lu, N. Zhou, P. Guo, B. Lu, and Z. Ye, “Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors.” RSC Adv., vol. 4, no.7, pp. 3145-3148, 2014
[15] J. Zhang, J. Lu, Q. Jiang, B. Lu, X. Pan, L. Chen, N. Zhou, “Stability of amorphous InAlZnO thin-film transistors.” J. Vac. Sci., Technol. vol. 32, no.1, 010602, 2014
[16] Z. Ye, S. Yue, J. Zhang, X. Li, L. Chen, and J. Lu, “Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors.” IEEE Trans. Electron Dev., vol. 63, no. 9, pp. 3547-3551, 2016
[17] J. B. Kim, C. Fuentes-Hernandez, W. J. Potscavage Jr, X. H. Zhang, and B. Kippelen, “Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition.” Appl. Phys. Lett., vol. 94, vol. 14, 142107, 2009
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[21] T. H. Cheng, S. P.Chang, and S. J. Chang, “Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors.” J. Electron. Mater., pp. 1-6, 2018
[22] J. Lee, J. S. Park, Y. S. Pyo, D. B. Lee, E. H. Kim, D. Stryakhilev, and Y. G. Mo, “The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors.” Appl. Phys. Lett., vol. 95, no. 12, 123502, 2009
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[24] T. H. Chang, S. J. Chang, C. J. Chiu, C. Y. Wei, Y. M. Juan, and W. Y. Weng, “Bandgap-engineered in indium–gallium–oxide ultraviolet phototransistors.” IEEE Photon. Technol. Lett., vol. 27, no. 8, pp. 915-918, 2015
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[26] M. H. Hsu, J. C. Syu, S. P. Chang, W. L. Huang, and S. J. Chang, “Photoresponses of GaZTO Thin-Film Transistors Fabricated by co-sputtering method.” IEEE Sens. Lett., 2018
[27] J. Y. Li, S. P. Chang, M. H. Hsu, and S. J. Chang, “High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering.” Materials., vol. 10, no. 2, pp. 126, 2017
[28] B. Cook, Q. Liu, M. Gong, D. Ewing, M. Casper, A. Stramel, and J. Wu, “Printing High-Performance Tungsten Oxide Thin Film Ultraviolet Photodetectors on ZnO Quantum Dot Textured SiO2 Surface.” IEEE Sens. J., vol. 18, no. 23, pp. 9542-9547, 2018
[29] M. Sun, Q. Fang, Z. Zhang, D. Xie, Y. Sun, J. Xu, and Y. Zhang, “All-Inorganic Perovskite Nanowires–InGaZnO Heterojunction for High-Performance Ultraviolet–Visible Photodetectors.” ACS Appl. Mater. Interfaces., vol. 10, no. 8, pp. 7231-7238, 2018
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chap6

[1] P. F. Carcia, R. S. McLean, M. H. Reilly, and Jr, G Nunes, “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering.” Appl. Phys. Lett., vol. 82, no. 7, pp. 1117-1119, 2003
[2] P. M. Fortunato, E. M., Barquinha, A. C. M. B. G. Pimentel, A. M. Goncalves, A. J. Marques, L. M. Pereira, and R. F. Martins, “Fully transparent ZnO thin‐film transistor produced at room temperature.” Adv. Mater., vol. 17, no. 5, pp. 590-594, 2005
[3] E. M. Fortunato, P. M. Barquinha, A. C. Pimentel, A. M. Gonçalves, A. J. Marques, R. F. Martins, and L. M. Pereira, “Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature.” Appl. Phys. Lett., vol. 85, no. 13, pp. 2541-2543, 2004
[4] C. P. Yang, S. P. Chang, S. J. Chang, T. H. Chang, C. J. Chiu, Y. L.Tsai, and T. Y. Liao, “Properties of Ga-Zn-O Ultraviolet Phototransistors Using Radio-Frequency Magnetron Co-Sputtering Method.,” Nanosci. Nanotechnol. Lett., vol. 10, no. 3, pp. 396-402, 2018
[5] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.” Nature, vol. 432, no. 7016, pp. 488, 2004
[6] H. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya, “Factors controlling electron transport properties in transparent amorphous oxide semiconductors.” J. Non-Cryst. Solids, vol. 354, no. (19-25), pp. 2796-2800, 2008
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[8] H. Hosono, “Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application.” J. Non-Cryst. Solids, vol. 352, no. (9-20), pp. 851-858, 2006
[9] S. Jeong, Y. G. Ha, J. Moon, A. Facchetti, and T. J. Marks, “Role of gallium doping in dramatically lowering amorphous‐oxide processing temperatures for solution-derived indium zinc oxide thin‐film transistors.” Adv. Mater., vol. 22, no. (12), pp. 1346-1350, 2010
[10] W. T. Chen, and H. W. Zan, “High-performance light-erasable memory and real-time ultraviolet detector based on unannealed indium–gallium–zinc–oxide thin-film transistor.” IEEE Electron Device Lett., vol. 33, no.1, pp. 77-79, 2012
[11] T. H. Chang, C. J. Chiu, S. J. Chang, T. Y. Tsai, T. H. Yang, Z. D. Huang, and W. Y.Weng,” Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric.” Appl. Phys. Lett., vol. 102, no.22, 221104, 2013
[12] W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, and C. C. Lee, “Oxygen-dependent instability and annealing/passivation effects in amorphous In–Ga–Zn–O thin-film transistors.” IEEE Electron Device Lett., vol. 32, no.11, pp. 1552-1554, 2011
[13] J. G. Um, M. Mativenga, and J. Jang, “Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress.” Appl. Phys. Lett., vol. 103, no.3, 033501, 2013
[14] J. Zhang, X. Li, J. Lu, N. Zhou, P. Guo, B. Lu, and Z. Ye, “Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors.” RSC Adv., vol. 4, no.7, pp. 3145-3148, 2014
[15] J. Zhang, J. Lu, Q. Jiang, B. Lu, X. Pan, L. Chen, N. Zhou, “Stability of amorphous InAlZnO thin-film transistors.” J. Vac. Sci., Technol. vol. 32, no.1, 010602, 2014
[16] Z. Ye, S. Yue, J. Zhang, X. Li, L. Chen, and J. Lu, “Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors.” IEEE Trans. Electron Dev., vol. 63, no. 9, pp. 3547-3551, 2016
[17] K. Jang, H. Park, S. Jung, N. Van Duy, Y. Kim, J. Cho, S. Park, “Optical and electrical properties of 2wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators.” Thin Solid Films., vol. 518, no.10, pp. 2808-2811, 2010
[18] A. V. Babichev, H. Zhang, P. Lavenus, F. H. Julien, A. Y. Egorov, Y. T. Lin, and M. Tchernycheva, “GaN nanowire ultraviolet photodetector with a graphene transparent contact.” Appl. Phys. Lett., vol. 103, no. 20, pp. 201103. 2013
[19] Y. Lu, Z. Wu, W. Xu, and S. Lin, “ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.” Nanotechnology, vol. 27, no. 48, 48LT03, 2016
[20] B. Cook, Q. Liu, M. Gong, D. Ewing, M. Casper, A. Stramel, and J. Wu, “Printing High-Performance Tungsten Oxide Thin Film Ultraviolet Photodetectors on ZnO Quantum Dot Textured SiO2 Surface.” IEEE Sens. J., vol. 18, no. 23, pp. 9542-9547, 2018
[21] S. Huang, X. Liu, K. Wei, G. Liu, X. Wang, B. Sun, and M. Hua, “O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors.” Appl. Phys. Lett., vol. 106, no. 3, pp. 033507, 2015
[22] T. Kim, Y. Nam, J. Hur, S. H. K. Park, and S. Jeon, “The influence of hydrogen on defects of In–Ga–Zn–O semiconductor thin-film transistors with atomic-layer deposition of Al2O3.” IEEE Electron Device Lett., vol. 37, no. 9, pp. 1131-1134, 2016
[23] Y. J. Kim, S. M. Kim, S. Heo, H. Lee, H. I. Lee, K. E. Chang, and B. H. Lee. “High-pressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene field-effect transistors.” Nanotechnology, vol. 29, no. 5, pp. 055202, 2018
[24] S. Y. Na, Y. M. Kim, D. J. Yoon, and S. M. Yoon, “Improvement in negative bias illumination stress stability of In–Ga–Zn–O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions.” J. Phys. D, vol. 50, no. 49, pp. 495109, 2017
[25] J. Cai, D. Han, Y. Geng, W. Wang, L. Wang, S. Zhang, Y. Wang, “High-performance transparent AZO TFTs fabricated on glass substrate.” IEEE Trans. Electron Dev., vol. 60, no.7, pp. 2432-2435, 2013
[26] L. Yue, H. Pu, H. Li, S. Pang, and Q. Zhang, “Dip-coated Al–In–Zn–O thin-film transistor with poly-methylmethacrylate gate dielectric.” J. Phys. D., vol. 46, no.44, 445106, 2013
[27] C. H. Ahn, B. H. Kong, H. Kim, H. K. Cho, “Improved electrical stability in the Al doped ZnO thin-film-transistors grown by atomic layer deposition.” J. Electrochem. Soc., vol. 158, no.2, pp. H170-H173, 2011
[28] T. H. Cheng, S. P. Chang, and S. J. Chang, “Electrical properties of indium aluminum zinc oxide thin film transistors.” J. Electron. Mater., vol 47, no. 11, pp. 6923-6928, 2018
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