本實驗使用濺鍍的方式製備二氧化鉿薄膜做為電阻式記憶體之絕緣層材料。此二氧化鉿薄膜具有相當緻密與均勻的表面，其表面粗糙度可以達到0.33 nm。此外，本次實驗比較了兩種不同製程手法製作電阻式記憶體的元件，分別使用金屬遮罩以及曝光微影，並比較其電性，發現曝光維影後的元件的低阻態與高阻態的電流均明顯降低，低阻態電流由10 mA降低至 29 uA，阻值比由105提升至108 以上，功率消耗從12 mW降低至 12 uW。另外，其兩種不同製程手法的操作電壓的電極相反。
本研究使用穿透式電子性顯微鏡探討其電阻轉換機制，發現在使用金屬遮罩製作的元件在低組態下，二氧化鉿絕緣層出現銦離子的成分，用曝光微影製作的元件則沒有此成分，在電流-溫度電性分析中，用金屬遮罩製作的元件在低組態下的電流會隨著溫度上升而下降，是為負溫度係數，表示此燈絲是金屬性的燈絲，反之，用曝光微影製作的元件在低電態電流則沒有與溫度有一定關係，由此兩種結果推測，電流降低與電壓極性改變是因為電阻轉換機制由銦離子遷移轉變為氧空缺所導致。

Hafnium oxide thin film as insulator of Resistive Random Access Memory via sputter were prepared. We fabricated the device by shadow mask and photolithography. Compared with device fabricated by shadow mask, the device fabricated by photolithography demonstrated outstanding device parameters improvements, such as lower LRS current, lower power consumption, higher resistance ratio larger than 108. Furthermore, the polarity of operation voltage changed.
We analyzed the composition in the HfO2 and utilized current – temperature measurement to discuss the transformation of the electrical properties between the different fabrications. Then we deduced the improvement of electrical properties and changes of polarity were attributes to the resistive switching mechanism dominated by In ions migration changed oxygen ions migration.

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