本論文主要探討於氧化鋁基板上製作二氧化銅鋁薄膜及其應用於光檢測器之研究。我的實驗以濺鍍銅導電層於氧化鋁基板上，並以電鍍的方式成長氧化亞銅薄膜，之後在大氣環境以1100 °C持溫12個小時，製備出二氧化銅鋁薄膜。
我們首先使用的是鍍有鉬薄膜的Si基板，並使用不同的製程生長二氧化銅鋁，雖然在XRD的結果上，有產生二氧化銅鋁的峰值，但銅在持溫長時間的情況下出現擴散至基板的現象，因此我們選擇將矽基板替換成氧化鋁基板。
　　實驗過程發現:氧化亞銅厚度與持溫時間對形成二氧化銅鋁有著很顯著的影響。相同的氧化亞銅厚度，若持溫的時間太長，則二氧化銅鋁會生成四氧化銅鋁與氧化銅；持溫的時間太短則氧化亞銅無法反應完全。因此厚度的變化與持溫時間的掌控是一個重要的因素。實驗分析以掃描式電子顯微鏡(SEM)、能量分散光譜儀(EDX)、X光繞射分析儀(XRD)、薄膜測厚儀(Alpha Step)進行表面形貌、組成成分、晶體結構和薄膜厚度的分析。
最後，在二氧化銅鋁薄膜上蒸鍍上一層鋁電極形成光檢測器，並將元件進行IV量測，光檢測器元件量測結果顯示:在5 μm電極間距時，以偏壓6V量測到的暗電流為3.73×10-6 A，85W氙燈照射下光電流則為1.0×10-5 A，約有三倍之放大效果。

In this study, I investigated methods to form CuAlO2 film using Al2O3 substrate, and its application to UV detector. I sputtered a Cu film on Al2O3 substrate followed by electrochemical plating(ECP) Cu2O film on the Cu coated Al2O3 substrate. A CuAlO2 film can be formed by annealing Cu2O/Cu/Al2O3 films at 1100 °C for 12 hours in air.
At first, I used Mo coated Si wafer as substrate and used many different processes to grow CuAlO2 film. The XRD results indicate that CuAlO2 film can be formed, however, Cu will diffuse through Mo film and into the Si substrate after the long annealing time at high temperature. Thus,Al2O3 substrate was used to replace the Mo coated Si substrate.
The experimental results show that the Cu2O thickness determines the exact time it required for the high temperature annealing. For the same thickness of Cu2O film, it reacts with Al2O3 substrate and forms CuAl2O4 and CuO films if over oxidation, but the reaction is not complete if the annealing time is not sufficient. The annealing time temperature, and Cu2O thickness are the key parameters to form CuAlO2 film using Al2O3 substrate. The study used scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffractometer (XRD), and Alpha Step to analyze film’s morphology, element’s composition, crystalline phase/orientation, and film thickness respectively.
Lastly, evaporation of Al film and lift-off process were used to form the electrodes of the photo detector followed by I-V measurements. When the electrode spacing is 5 μm and bias voltage is set at 6 V, I obtained: dark current of 3.73×10-6 A and photocurrent of 1.0×10-5 A under 85W Xenon light illumination. It shows about 3 times of photocurrent amplification.

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