成長氧化鋅奈米線典型之合成方法為化學氣相沉積法，其溫度通常大於500℃，本研究利用射頻磁控濺鍍系統於室溫下成長氧化鋅奈米結構於各種基板上，藉由改變催化劑和濺鍍參數如功率、工作距離、工作壓力及氧分壓等參數，基板包含玻璃、矽基板、PET等，催化層以沉浸法、化學鍍膜法和物理氣相沉積法等製備。在此鍍膜的方法，各種液態催化劑被使用於不同濃度沉積於積板表面，並改變基板上之狀態製造可能之應力釋放點，沉積後之基板放置於射頻磁控濺鍍機之艙體於室溫下成長氧化鋅奈米結構，並探討各種參數對於氧化鋅結構、成份與性質的影響，並以掃描式以及穿透式電子顯微鏡光觀察其表面型態、X-ray量測其成份以及晶面以及ESCA量測價態之變化與成份比例，並探討不同pH值之催化劑對於氧化鋅奈米結構等之影響，進一步討論此新穎成長氧化鋅方法的成長機制。

Chemical vapor deposition (CVD) is one of the typical methods used extensively for the synthesis of ZnO nanostructures. The synthesis temperature is usually greater than 500 °C. Such a high synthesis temperature excludes the use of glass or polymer substrates. In this research, a novel, room temperature process for the synthesis of ZnO nanostructures is developed. The process includes the use of a catalyst seeded substrate and rf magnetron sputter deposition. The substrates used include glass, Si wafer and polyethylene terephthalate (PET). The catalyst seeding was performed using a dip coating process, a chemical coating process, and a sputter deposition process. In the coating processes, various liquid precursors with different pH values were used. The catalyst seeded substrate was then placed in an rf magnetron sputter deposition chamber for the synthesis of ZnO nanostructures at the room temperature under various deposition conditions. According to the liquid percurors method we used physical plating for the seeding layers and produce the stress reduced points to compare with the liquid precurors which could induce production of different ZnO nanostructures. Depending on the synthesis conditions, particularly the pH value of the seed layer solution different nanostructures of ZnO were obtained. The growth mechanism acting in this novel method of growing ZnO nanostructure has been discussed. The produced ZnO nanostructures were characterized by high resolution electron microscopy, X-ray diffraction and photoluminescence spectroscopy.

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