氧化鎳具有非磁性、穩定物理與化學特性，且能帶位置佳，有利於做為鈣鈦礦太陽能電池的選擇性材料，可傳輸電洞以及阻擋電子傳輸，為一非常有潛力的材料。本研究低溫濺鍍的製程條件，來沉積氧化鎳薄膜並初步分析其特性。
本研究以低溫濺鍍氧化鎳薄膜，選用不同厚度、不同通氧氣通量與添加直流濺鍍銅做為分析。而元件方面分為兩部分，p-型與n-型兩部分，p-型為氧化鎳做為入光面，取代PEDOT:PSS有機材料，並加上多孔層氧化鎳做為電洞傳輸層，並使用上述不同條件薄膜去製程元件；n-型是將氧化鎳做為電洞傳輸層取代spiro，使得元件在大氣氛圍下可以長期保存，由於濺鍍製程能量過高，增加緩衝層做為保護，而5 nm的金做為緩衝層有最好效率3.88%，並且可以在大氣下保存12天。

In this study, we introduce the use of low temperature sputtered nickel oxide thin films as an effective electron blocking layer for mesoscopic NiO/CH3NH3PbI3 perovskite solar cells. The influence of film thickness and oxygen flow doping on the device performance are scrutinized. With the film thickness of 5 nm, we achieved power conversion efficiency of 13.7% for the p-i-n heterojunction inverted structure. We also used nickel oxide film as a hole-transport layer for the n-i-p structure which can prevent perovskite degradation from oxygen and water in the ambient atmosphere and thus improve its stability. The result indicated that nickel oxide film is better than other organic materials as blocking layer in p-i-n perovskite solar cells. Moreover, The nickel oxide film stability can improve the stability in air atmosphere as a hole-transport layer in n-i-p perovskite solar cells.

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