本論文針對三五族化合物半導體太陽能電池元件作相關研究與製作，包括新穎材料氮化鎵銦／氮化鎵成長在藍寶石基板上的結構設計與其所面臨問題之探討，以及成長於砷化鎵基板上之磷化鋁鎵銦主動層不同吸收層厚度對光吸收的影響與比較。
　　在多層串接太陽能電池的材料選擇上，較高能隙與更低能隙材料是必須的。我們尋求比磷化鎵銦更高能隙的磷化鋁鎵銦，利用金屬有機化學氣相沉積磊晶成長，針對磷化鋁鎵銦吸收層厚度對電池的光吸收特性，探討其對電池光電轉換效率特性的影響。在新穎材料氮化鎵銦／氮化鎵的結構設計上我們設計了幾種結構，可分為多重量子井結構與線性梯度等磊晶方法來設計主動層的組成。初期先研究結構設計的可行性，期望透過初步的量測資料作為未來磊晶技術的參考依據，期許最後全波段高效率太陽能電池的製作。

This thesis aims at the research and fabrications of group III/V compound semiconductor solar cells including a variety of indium gallium nitride/gallium nitride (InGaN/GaN) heterostructures grown on sapphire (Al2O3) substrates and aluminum-gallium-indium phosphide (AlGaInP) heterostructures grown on positive-type gallium arsenide (GaAs) substrates. These III/V-based solar cells were designed with different thickness and/or indium contents to evaluate the effect of these changes on the improvement of device performances.
It is both necessary to contain materials with higher and lower energy bandgap for tandem solar cells. For AlGaInP-based solar cells, we adopted AlGaInP with higher energy bandgap than gallium-indium phosphide (GaInP) to serve as the base layer. At the same time, the effect of base layer thickness on conversion efficiency was also studied.
Typically, photovoltaic devices need thick absorption layer to gain higher efficiency. However, it is difficult to grow an III-N-based solar cell with thick InGaN absorption layer(s) because of the large lattice mismatch between GaN and InGaN. Therefore, in this study, the InGaN-based solar cells, InGaN/GaN multiple quantum well and linearly-graded InxGa1-xN single layer were used to serve as the active layers to avoid the problem of crack. This is a beginning to survey whether these structures and material systems are promising or not to fabricate the full spectra solar cells. Although the results are not outstanding, we hope these preliminary studies could offer some information for people engaged in the field.

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附錄
【1】Dieter K. Schroder, Semiconductor Material and Device
Characterization, 3rd edition, John Wiely & Sons, 2005