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研究生：	薛尹瑜 Hsueh, Yin-Yu
論文名稱：	製備鉑/氮化鋁鎵/氮化鎵高電子遷移率電晶體於高靈敏度氫氣感測器之應用 Pt/AlGaN/GaN High Electron Mobility Transistors for High-Sensitivity Hydrogen Sensor Applications
指導教授：	王永和 Wang, Yeong-Her
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2021
畢業學年度：	109
語文別：	英文
論文頁數：	92
中文關鍵詞：	氣體感測器、氮化鋁鎵/氮化鎵高電子遷移率電晶體、介面態、鹽酸及四甲基氫氧化銨溶液、氫氣感測特性
外文關鍵詞：	gas sensor, AlGaN/GaN high electron mobility transistors (HEMTs), surface states, HCl and TMAH treatments, hydrogen sensing characteristic
相關次數：	點閱：142 下載：0
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在本實驗中，展示了兩階段表面處理的鉑/氮化鋁鎵/氮化鎵高電子遷移率電晶體（HEMT）的氫氣感測器。主要是利用鉑作為閘極金屬，與氫氣產生催化反應，使得氫分子斷鍵並吸附在氮化鋁鎵表面的介面態，進而增強通道載子濃度。
相較於其他研究著重在改變元件結構或增加感測面積，本篇論文主要會探討介面態在HEMT氣體感測器中所扮演的角色。我們採取了兩階段溶液處理的方式來研究介面態濃度及種類對氣感特性的影響。首先，用鹽酸溶液減少氮化鎵表面上的天然氧化物，並在平台隔離蝕刻後，使用四甲基氫氧化銨溶液(TMAH)去除表面陷阱以及降低元件的粗糙度。通過這兩階段溶液處理，漏極和柵極漏電流降低了一個數量級以上，並有效改善了元件的次臨界擺幅特性，因而達到更佳的感測器靈敏度。另外，因TMAH溶液的蝕刻機制，會使得氮化鋁鎵表面的氮相關介面態的比例大幅增加，導致感測器對氫氣的吸附能力增強，進一步改善氣感特性。
為了找出HEMT氣體感測器與溫度之間的關係，探討了不同溫度對氫靈敏度和反應時間的影響。另外，與一般兩端感測器元件不同，HEMT感測器能夠通過調整閘極的偏壓有效優化靈敏度，因此本實驗測試了不同閘極偏置下的氫氣響應值變化。最後，在柵極電壓保持最佳偏置以及溫度為250度時偵測1 ppm和100 ppm的氫氣濃度，得到的氫氣響應值分別為21.35 %及90.32 %。經溶液處理後的元件展現了出色的氫靈敏度與穩定性，顯示經兩階段表面處理的HEMT氫氣感測器具有良好的線性特性。

In this work, a sensor based on the Pt/AlGaN/GaN High Electron Mobility Transistor (HEMT) with a two-step surface treatment for hydrogen sensor application was demonstrated. Platinum was used as the gate metal to produce a catalytic reaction with hydrogen, so that hydrogen molecules were dissociated and were adsorbed on the surface state. Therefore, the concentration of channel carrier was enhanced.
Compared with other studies which focused on device structure or sensing area, the role of surface states in HEMT gas sensors would be mainly discussed in this paper. A two-step surface treatment method was adopted to investigate the influence of concentration and type of surface states on the gas-sensing characteristics. First, the HCl treatment was applied to remove the native Ga-oxide on the wafer surface. Then, after mesa isolation etching, a tetramethylammonium hydroxide (TMAH) treatment was used to remove the surface traps from the surface and make the GaN surface smooth. Through the two-step treatment, the drain and gate leakage currents were reduced by more than an order of magnitude, and the subthreshold swing voltages of the devices were effectively improved, thereby achieving better sensor sensitivity. In addition, due to the etching mechanism of the TMAH solution, the ratio of the nitrogen-related interface states on the AlGaN surface would be greatly increased, which improved the ability to adsorb hydrogen and further enhanced the gas sensing characteristics.
To determine the relationship between the HEMT sensor and the temperature, the effects of different temperatures on hydrogen sensitivity and reaction time were investigated. In addition, as compared to two-terminal sensor devices, HEMT sensors more effectively optimized the sensitivity by adjusting the bias voltage of the gate. Thus, the variations in the hydrogen response value under different gate bias were tested. When the gate voltage was maintained at the optimal bias, and the temperature was 250°C, the response values to 1 ppm and 100 ppm H2 were 21.35% and 90.32%, respectively. After the surface treatments, the device exhibited excellent sensitivity and stability, indicating that the sensor had good linear characteristics.

中文摘要 I
Abstract III
誌謝 VI
CONTENTS VIII
List of tables XII
List of Figures XIII
Chapter 1 Introduction 1
1-1 Background 1
1-2 Motivation 3
1-3 Organization 7
Chapter 2 Literature Survey 9
2-1 Introduction of gas sensor 9
2-2 Types of Gas Sensor 10
2-2-1 Catalytic Combustion Gas Sensors 10
2-2-2 Hot Wire Semiconductor Gas Sensors 11
2-2-3 Infrared Gas Sensors 13
2-2-4 Electrochemical Gas Sensors 14
2-2-5 Semiconductor Gas Sensors 16
2-3 Non-Resistive Semiconductor Gas Sensors 18
2-3-1 Sensing Mechanism 18
2-3-2 Performance Properties 19
2-3-3 Influencing Factors on Response 20
2-3-3-1 Temperature 20
2-3-3-2 Gate Bias 20
2-3-3-3 Gate Dimension 22
2-3-3-4 Gate Metal Thickness 24
Chapter 3 Experiments 25
3-1 Experimental Equipment 25
3-1-1 Oven 25
3-1-2 Spin Coater 26
3-1-3 Mask Aligner 27
3-1-4 Electron Beam Evaporator 28
3-1-5 Sputter 28
3-1-6 Rapid Thermal Annealing System 30
3-1-7 ICP Etching System 31
3-1-8 Semiconductor Analyzer 32
3-1-9 Atomic Force Microscope 33
3-1-10 Transmission Electron Microscopy 34
3-2 Device fabrication 35
3-2-1 Sample Cleaning 36
3-2-2 Mesa Isolation 37
3-2-3 Source and Drain Lithography 39
3-2-4 Source and Drain Ohmic Contacts 40
3-2-5 Gate Definition 41
3-2-6 Schottky Gate Deposition 42
3-3 Schematic Procedures 43
Chapter 4 Results and Discussion 46
4-1 Structure of GaN Gas Sensor 46
4-2 Physical Properties of GaN Gas Senser 47
4-2-1 Atomic Force Microscopy (AFM) Analysis 47
4-2-2 Transmission Electron Microscopy (TEM) Analysis 50
4-2-3 Energy dispersive spectroscopy (EDS) Analysis 52
4-3 Surface Treatment DC Performance 54
4-3-1 Subthreshold Swing and On-Off Ratio 55
4-3-2 Gate Leakage Current 57
4-3-3 Pulse I-V Characteristics 58
4-4 Surface Treatment Sensing Performance 60
4-4-1 Temperature-Dependent Sensitivity 60
4-4-2 Gate-Voltage-Dependent Sensitivity 67
4-4-3 Concentration-Dependent Sensitivity 72
4-4-4 Repeatability and Dynamic Response 78
4-4-5 Sensing Mechanism 80
Chapter 5 Conclusion 84
Chapter 6 Future Work 86
Reference 87
                                    

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