本論文工作為有機半導體元件的磁光電效應與界面特性的分析，在光致電壓元件的磁響應分析與量測部分，我們發現在完全不具有鐵磁元素的有機光致電壓元件有很大的外加磁場磁電導效應，而此一效應可以藉由外加電壓的調制改變其大小與磁電導的正負值，為研究此一機制我們製作異質接面太陽電池元件結構後得到當受體材料存在時電荷複合能態的存在將使的外加磁場響應受到抑制，而在進一步的研究中我們得到材料中的單重態激發態不論激發子或極化子對在外加磁場效應下可以貢獻出正的磁電導，而材料中的三重態激發態則會貢獻出負的磁電導效應，因激發子的單重態與三重態能量差大約在1eV，因此我們發現外加磁場響應主要作用發生在極化子對上，為研究此一激發態磁轉換機制對元件特性的影響，我們製作不同電極討論此激發態轉換行為，我們發現當使用Ca電極時元件中的主要激發態磁響應的貢獻為三重態，而使用Al電極會觀察到單重態的磁響應貢獻，當我們使用LiF做為電極不論是LiF/Al或是LiF/Ca都會減少三重態的貢獻。
有機元件界面特性會影響元件的電子電洞傳導及注入效率，而金屬電極的熱蒸鍍過程容易破壞有機半導體主動層中的激發子再結合區，使元件發光效率受到抑制，因此在本論文工作中我們使用有機氧化poly(ethylene glycol) dimethyl ether (PEGDE)做為陰電極緩衝層，保護主動層不被熱蒸鍍金屬破壞，但是PEGDE本身卻是一絕緣材料，當PEGDE的存在本應該使電子注入困難，但是我們卻發現藉由PEGDE與金屬Al的搭配將有效的使元件效率（14.53 cd/A）提升約為以Al金屬做為電極時（0.16 cd/A）的100倍。透夠X光光電子能譜的分析我們發現當PEGDE與金屬Al搭配時發現樣品會觀察到金屬與碳的鍵結，藉由能譜解析我們發現此鍵結為C-Al或C-O-Al的鍵結，我們推測此一複合材料電極的產生將有助於電子的注入，亦即表面功函數會降低。

This study elucidates the influence of applied magnetic field, electrical bias and the type of device electrode on the dissociation, intersystem crossing, and charge reaction processes of photo- and electro-induced excited states in regioregular poly(3-hexylthiophene) (P3HT)-based polymer photovoltaic devices. The dissociation of the singlet polaron-polaron (PP) pairs, as facilitated by the applied magnetic field, is responsible for a positive Magneto Conductance (MC) effect. However, a negative MC effect is dominated by the decline of charge-reaction rates, for triplet excitons. The net MC responses of the photovoltaic cells are basically the sum of the positive and negative MC effects, which can be manipulated by the applied magnetic field and electrical bias. An inversion in the MC response is observed at the electrical bias near the open-circuit voltage (Voc). In addition, blending of an electron acceptor material, [6,6]-phenyl C61-butyric acid methyl ester, in P3HT active layer quenches the photo-excited states at the donor-acceptor interface and results in distinct MC responses of photovoltaic cells, which probably are related to the features indicating the formation of intermolecular charge-transfer complexes at donor-acceptor junction.
Spin-casting or thermal evaporation in vacuum of a salt-free, neutral, organic-oxide ultra-thin film as a buffer layer with an aluminum (Al) cathode has become an alternative approach for fabricating high-performance organic and polymer light-emitting diodes (O/PLEDs). The electroluminescence efficiency of phenyl-substituted poly(para-phenylene vinylene) copolymer-based PLEDs is 0.16 cd/A when Al is used as the device cathode, but is approximately two orders of magnitude higher, 14.53 cd/A, when an organic oxide/Al composite cathode is used. The polymer/metal junction in PLEDs with and without depositing an ultra-thin organic oxide interlayer is studied by X-ray photoelectron spectroscopy. Experimental results indicate that the deposition of an Al electrode causes the oxidation at the surface of the light-emissive polymer layer. Introducing an organic-oxide cathode buffer layer suppresses the oxidation and the diffusion of the Al atoms into the functional polymer layer. The formation of a carbide-like (negative carbon) thin layer, which accompanies interfacial interactions, is critical to the injection of electrons through the Al cathode. The balanced charge injection is responsible for the substantially improved device performance. This process is specific to the organic oxide/Al interface, as revealed by a comparison with similar device configurations that have Ag as the electrode, in which no significant interaction in the interface is observed.

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