本研究主要目的為使用反應式磁控共濺鍍法，製備尚未被利用於太陽能選擇性吸收塗層之瓷金材料W-HfO2-x，為了使實驗更接近於應用，將W-HfO2-x鍍製於不鏽鋼基板上，透過各種不同實驗參數的分析，得到吸收率良好之單層膜，再藉由單層膜紅外光反射層與抗反射層的研究，將各層最佳的實驗參數進行多層堆疊，創造出高達92%太陽能吸收率之多層膜，並且進行600°C下的高溫測試，證明其為應用於高溫下之多層W-HfO2-x太陽能吸收膜。
本論文之結果與討論主要分為四大部分，第一部分至第三部分主要探討單層膜紅外光反射層(W)、瓷金吸收層(W-HfO2-x)、抗反射層(HfO2-x)之單層膜研究。我們首先利用場發射掃描式顯微鏡(FE-SEM)的側面分析，得到各膜層之厚度與薄膜側邊形貌，發現當共濺鍍時，在濺鍍中無通氧氣的環境下，會有較高的薄膜沉積速率與明顯之柱狀結構。在低略角X光繞射儀(GI-XRD)的量測下，進行薄膜結晶結構的分析，發現鎢的摻雜會限制氧化鉿形成結晶而呈現非晶態，而造成吸收峰之吸收率下降，另外也發現氧化鉿在較高之功率下能形成晶粒較大的緻密結構，進而影響折射率。我們也利用橢圓偏光儀(Ellipsometer)來分析不同功率下之折射率，當功率提高時，由於其較為緻密且結晶性質較佳之結構，折射率也相對提高。並藉由紫外光/可見光/近紅外光分光光譜儀(UV/vis/NIR Spectrometer)量測瓷金吸收層之反射率，再經公式的計算得出太陽能吸收率，發現在無通氧之情況，其吸收率與鎢靶功率呈正相關，因為厚度造成吸收的增加，由此結果選擇此情況當作高金屬含量瓷金吸收層，而在有通氧當反應氣體的情況時，發現其吸收率與鎢靶功率呈負相關，因為吸收峰波谷位置與鎢奈米晶粒大小隨著鎢靶功率的提升有紅移的現象，由此結果選擇此情況當作低金屬含量瓷金吸收層。我們也利用場發射掃描式顯微鏡附設之能量散佈光譜儀(EDS)來量測表面之組成元素，證明低金屬含量與高金屬含量瓷金吸收層之區別。另外使用高解析場發穿透式電子顯微鏡(HR-TEM)來觀察鎢奈米晶粒的尺寸大小，發現鎢靶功率的提高會造成晶粒變大，進而影響吸收峰位置的偏移。最後使用放射率計(Emissionmeter)量測出不同實驗參數下之放射率，進而選擇較佳之單層膜。
第四部分則將各個最佳之單層膜進行多層堆疊，形成SS substrate / W / W-HfO2-x(H) / W-HfO2-x(L) / HfO2-x的結構，經由改變各層的厚度，以及使用超高金屬含量瓷金吸收層來取代鎢層，並藉由分光光譜儀與放射率計的吸收率和放射率量測，以及使用色度計(Colorimeter)對色彩之分析，創造出高吸收率與低放射率之彩色多層選擇性吸收膜，最後做600°C的高溫測試，發現其光學性質幾乎沒有改變，驗證其為可以應用於高溫下之太陽能吸收膜。

Tungsten-doped Hafnium oxide (W-HfO2-x) coatings were deposited using RF and DC reactive magnetron co-sputtering techniques. Stainless steel (5 x 5 cm) was used as substrates for solar absorber W-HfO2-x coatings. In this works, various deposition parameters including sputtering power, O2 flow rate, and deposited time were investigated. The resulting coatings therefore exhibit various compositions, crystal structures, grain sizes, and thicknesses. The obtained coatings were examined using, field emission scanning electron microscopes (FE-SEM), transmission electron microscopes (TEM), glazing angle X-Ray diffraction (GIXRD), UV/vis/NIR spectrometer, and emissionmeter. Effects of the material characteristics on the coating performance are discussed.

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