本論文中，我們首先探討以原子層沉積系統所製備的不同層數之大面積二硫化鉬
薄膜應用於場效電晶體中，從中發現以原子層沉積系統所製備之單層薄膜元件特性比
起雙層薄膜來的較佳，此現象是因為多層薄膜比起單層薄膜在層與層之間有著較多的
懸空鍵以及缺陷而造成電子傳輸的捕陷，使得元件特性的降低。之後我們透過連續轉
印的方式來製備多層的二硫化鉬場效電晶體，以連續轉印成長較為完整以及結晶性較
好的單層至二氧化矽/矽的基板上製備多層二硫化鉬元件，藉由隔離電子主要傳輸通
道以及降低二維材料層與層之間缺陷影響的方式改善元件特性，而優化方面則使其開
關電流比增加約 48 倍、場效電子遷移率增加約 15 倍。除了在薄膜製備方式的不同，
我們也利用沉積三氧化二鋁在二氧化矽/矽基板上的方式製作二硫化鉬元件，在結果
上元件特性也有一定的提升，代表三氧化二鋁比起二氧化矽在與二硫化鉬的界面上有
著較小的缺陷影響。此外我們發現二維材料容易受環境以及大氣的影響而造成元件有
遲滯現象的產生，所以我們藉由沉積三氧化二鋁的鈍化氧化層來優化雙層二硫化鉬元
件特性，藉此隔絕大氣環境對於電子傳輸通道的影響，因此從元件特性的結果可以觀
察到有著較大的開關電流比以及場效電子遷移率，另外在遲滯方面，元件的正掃以及
反掃的曲線在經過鈍化氧化層的沉積後也近乎吻合，也近一步證實通過鈍化層的沉積
可以隔離大氣對於二氧化鉬的影響。可由於二維材料與鈍化氧化層間容易有電荷儲存
的產生，所以我們在沉積完源極以及汲極電極後轉印單層二硫化鉬至元件上，藉此消
除通道與鈍化氧化層之間的電荷儲存，最後同樣沉積鈍化氧化層，其優化的特性可以
使得場效電子遷移率增加約 1.7 倍。藉由以上方式可以看出透過單層的多次轉印以及
鈍化氧化層的沉積可以消除二硫化鉬的界面缺陷以及環境對於二維材料的影響，進而
提升二硫化鉬場效電晶體的特性。

In this thesis, we first explored the application of molybdenum disulfide thin
films with different layers prepared by atomic layer deposition in field-effect
transistors. The multi-layer film has more dangling bonds and defects between
layers than the single-layer film, which reduces the device's performances.
Afterwards, we prepared a bi-layer molybdenum disulfide field-effect transistor
by repeatedly transferring mono-layer molybdenum disulfide films. The electrical
characteristics improved due to the reduced influence of defects between twodimensional material layers. The ON/OFF current ratio increased by about 48
times, and the field-effect electron mobility increased by about 15 times. The
devices were also fabricated on the other substrate with additional 30 nm
aluminum oxide on silicon dioxide/silicon substrates, and the performances were
also improved to a certain level, indicating that aluminum oxide has a minimal
defect effect at the interface with molybdenum disulfide. Additionally, the
performance of the device performances in terms of hysteresis showed that the
atmospheric conditions have a significant impact to two-dimensional materials.
Therefore, we optimized the performances of bi-layer molybdenum disulfide
transistors by depositing a passivation aluminum oxide layer. This resulted in a
large switching current ratio, high field-effect electron mobility, and nearly
identical forward and reverse scan curves. Based on the possibility of charge
storage between the two-dimensional material and the passivation oxide layer, we
transferred an additional mono-layer molybdenum disulfide after defining and
depositing the electrodes. Finally, the passivation oxide layer was deposited. The
optimization work increased the field-effect electron mobility by about 1.7 times,
and the hysteresis curves under forward scan and reverse scan were also nearly
identical.

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