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研究生：	楊哲源 Yang, Che-Yuan
論文名稱：	應用在28GHz射頻前端之氮化鎵電路元件設計與分析 Design and Analysis of GaN Circuit Components Used in 28 GHz RF Front-End
指導教授：	王永和 Wang, Yeong-Her
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2022
畢業學年度：	110
語文別：	英文
論文頁數：	97
中文關鍵詞：	氮化鎵、Ka頻段、功率放大器、藍吉耦合器、巴特勒矩陣
外文關鍵詞：	Gallium Nitride (GaN), Ka band, power amplifier, Lange coupler, Butler matrix
相關次數：	點閱：143 下載：0
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本論文使用氮化鎵 .15 以及 .25製程製作射頻前端電路元件，其應用28GHz之頻段範圍，也就是在現今發展之第五世代通訊行動技術(5G)之中。
本論文共製作了功率放大器以及巴特勒矩陣。其中功率放大器以.15製程製作。在射頻前端系統中，功率放大器為其中不可或缺的一部分以增加功率信號。而在第二章及第三章中提出了應用在Ka頻段內並以二級架構達成17dB之增益的對稱型功率放大器。且在設計時追求最大之功率輸出，可達接近一瓦特之功率輸出。並針對模擬以及量測落差方面進行相關分析。
在巴特勒矩陣方面，此論文提出了一種全新架構，和傳統之巴特勒矩陣相比，將傳統之前級開關分為兩級開關，可以更進一步去簡化電路複雜度，並且在未來可以預測更進一步簡化晶片尺寸。此巴特勒矩陣也應用於Ka頻段之毫米波行動通訊。利用藍吉耦合器以及微帶線實現了相位變化的功能，且利用電晶體等效二極體的功能可以達到控制訊號流向的功能，使在輸出端得到想要的結果。在相位變換方面，大致可達到３０度的相位變化。於第四章節最後也分析了模擬結果與量測結果間的落差。
未來在設計方面針對此論文之缺失加以改善，期許可以得到更佳之設計結果。

This study uses gallium nitride (GaN) 0.15 and 0.25 processes to fabricate RF front-end circuit components. These components are used in the 28 GHz frequency range, which is the fifth generation (5G) of communication and mobile technology recently developed.
A power amplifier and Butler matrix are produced. The power amplifier is made in the 0.15 process. In the RF front-end system, the power amplifier is an integral part to increase the power signal. The second and third chapters propose a symmetrical power amplifier that is applied in the Ka-band and achieves a gain of 17 dB with a two-stage structure. In the design of the pursuit of the maximum power output, up to close to one watt of power output, we carry out relevant analysis on simulation and measurement drop.
In terms of the Butler matrix, this paper proposes a new architecture. Compared with the traditional Butler matrix, the traditional pre-stage switches are divided into two-stage switches, which can further simplify the circuit complexity and can be predicted in the future. Simplified wafer size. This Butler matrix is also used in Ka-band millimeter-wave mobile communications. The function of phase change is realized using a Lanji coupler and a microstrip line. The function of controlling the signal flow can be achieved using the function of a transistor equivalent diode so that the desired result can be obtained at the output end. In terms of phase transformation, a phase change of approximately 30° can be achieved. At the end of the fourth chapter, the gap between the simulation and measurement results are analyzed.
In the future, the design will be improved to obtained better results.

中文摘要	I
Abstract	III
致謝	V                            
CONTENTS	IV
List of Tables	XII
List of Figures	XIIII
Chapter 1 Introduction	1
1-1 Research Background and Motivation	1
1-2 Chapter Brief	11
Chapter 2 Principle of Power-amplifier design	15
2-1 GaN Power Amplifier	15
2-2 Class of Operation Amplifiers	17
2-2-1 Introductions	17
2-2-2 Class A	17
2-2-3 Class B	19
2-2-4 Class AB	21
2-2-5 Class C	22
2-3 Basic specification parameters	24
2-3-1 Noise Figure	24
2-3-2 Gain/Loss	25 
2-3-3 Stability	27 
2-3-4 Output Power	28 
2-3-5 Power Added Efficiency (PAE)	28 
2-3-6 Intermodulation Distortion	29 
Chapter3 28 GHz Power-Amplifier Design and Measurement Results and Analysis	31
3-1 Overview	31
3-2 Specification	31
3-3 Device Model	33
3-3-1 Small Signal Model for 100 Tµm UGW	34
3-3-2 Large Signal Models for 100 Tµm UGW	38
3-3-3 LC Simulation	39
3-3-4 Microstrip Line Simulation	40
3-4 Layout	43
3-5 Measurement Results	48
3-6 Analysis	58
Chapter4 Butler Matrix	59
4-1 Introduction and applications of the Butler matrix	59
4-2 Key technology of mm-wave array-antenna module design-Beam-forming	61
4-3 Design of the Butler matrix	64
4-3-1 Phase shifter	64
4-3-2 Principle operation of phase shift.	67
4-4 Lange Coupler	69
4-5 RF toggle switch	70
4-6 Design of the Butler matrix	72
4-7 Analysis	88
4-7-1 Model of Lange Coupler	88
4-7-2 Equivalent diode	89
Chapter 5 Conclusions and Future Works	90
5-1 Conclusions	90 
5-1 Future Works	92 
References	93
 List of Tables

Chapter 1 Introduction
Table.1-1 28 GHz Antenna-array module Link Operation.	9
Chapter 2 Principle of Power-Amplifier Design
Table.2-1 Comparison table of material properties between Si and GaN. [16]  	16
Table.2-2 Bias operation of different kinds of power amplifiers.	24
Chapter 3 28 GHz Power-Amplifier Design and Measurement Results and Analysis
Table 3-1 Design procedure of Power Amplifier.	32
Table 3-2 Specification of Power Amplifier MMIC.	33
Table 3-3 Current of the measurement.	53
Chapter 4 Butler Matrix
Table 4-1 Current of transistor in different supply voltages.	89



List of Figures

Fig. 1-1 Frequency-band designations.	2
Fig. 1-2 Array-antenna system.	7
Fig. 1-3 ITRI 28 GHz phased array-antenna module. (a) Front view (b) Side view 	8
Fig. 1-4 Schematic of RF front-end system.	10
Fig. 1-5 Thesis chapter structure.	14
Fig. 2-1 Operation mode of Class A power amplifier [17]	18
Fig. 2-2 Operation mode of Class B power amplifier [17]	20
Fig. 2-3 Operation mode of Class AB power amplifier [17]	22
Fig. 2-4 Operation mode of Class C power amplifier [17]	23
Fig. 2-5 A two-port amplifier.  	26
Fig. 2-6 Second and third intermodulation distortion.	29
Fig. 2-7 Third-order intercept point. [19]	30
Fig. 3-1 Small-signal equivalent model of GaN on SiC HEMT	34
Fig. 3-2 Schematic of 100 Tµm gate width simulation	35
Fig. 3-3 Simulation results of transistors in smith chart. (a) S11 simulation results.	35
Fig. 3-3 Simulation results of transistors in smith chart. (b) S12 simulation results. (c) S21 simulation results.	36
Fig. 3-3 Simulation results of transistors in smith chart. (d) S22 simulation results.	37
Fig. 3-4 I-V curve simulation schematic of 100 Tµm gate width	38
Fig. 3-5 I-V curve of 100 Tµm gate width.	39
Fig. 3-6 LC simulation of power amplifier.	40
Fig. 3-7 Input matching network simulation schematic	41
Fig. 3-8 Output matching network simulation schematic	42
Fig. 3-9 Interstage matching network simulation schematic	42
Fig. 3-10 Layout of input matching network.	44
Fig. 3-11 Layout of output matching network.	45
Fig. 3-12 Layout of interstage matching network.	45
Fig. 3-13 PA schematic network.	46
Fig. 3-14 Layout of Power Amplifier.	47
Fig. 3-15 S-parameters simulation results of power amplifier. (a) RF_freq=27 GHz(b)RF_freq=28 GHz(c)RF_freq=29 GHz(d)RF_freq=30 GHz(e)RF_freq=31 GHz	49
Fig. 3-16 power and gain simulation results of power amplifier. (a) RF_freq=27 GHz, (b) RF_freq=28 GHz, (c) RF_freq=29 GHz, (d) RF_freq=30 GHz, and (e) RF_freq=31 GHz	50
Fig. 3-17 Chip on test fixture.	51
Fig. 3-18 Top view of the wafer and the location of the wire bonding.	52
Fig. 3-19 S21 of power amplifier in different Vg values.	54
Fig. 3-20 S11 of power amplifier.	55
Fig. 3-21 S22 of power amplifier.	56
Fig. 3-22 P3 and P5 dB of power amplifier. (a) Vg=-1.3 V (b) Vg=-1.4 V(c) Vg=-1.5 V(d) Vg=-1.6V	57
Fig. 4-1 A four-beam conventional Butler Matrix schematic.	59
Fig. 4-2 Schematic of antenna array.	62
Fig. 4-3 mm-wave beam-forming module.	63
Fig. 4-4 Phase shifter using microstrip line toggle switch.	65
Fig. 4-5 Phase shifter using resonant toggle switch.	66
Fig. 4-6 Schematic of single Lange coupler phase shifter.	67
Fig. 4-7 Schematic of toggle switch combines Lange coupler phase shifter.	68
Fig. 4-8 Model of Lange Coupler.	69
Fig. 4-9 Schematic of RF toggle switch..	71
Fig. 4-10 Design model of the Butler matrix.	72
Fig. 4-11 Whole layout of the Butler matrix..	74
Fig. 4-12 45o phase difference.	75
Fig. 4-13 Insertion loss and return loss simulation results of Lange Coupler in this design.	79
Fig. 4-14 Insertion loss and return loss of switch.	80
Fig. 4-15 Return loss of the Butler matrix.	80
Fig. 4-16 Insertion loss of the Butler matrix.	81
Fig. 4-17 Phase shift of the Butler matrix.	81
Fig. 4-18 Image of the Butler matrix chip	82
Fig. 4-19 Measurement results of the output port 1 of the Butler matrix. (a) First stage +1 V and second stage -1 V. (b) First stage +2 V and second stage -2 V. (c)	First stage +3 V and second stage -3 V. (d) First stage +4 V and second stage -4 V. (e) 	First stage +5 V and second stage -5 V. 	83
Fig. 4-20 Measurement results of the output port 2 of the Butler matrix(a) First stage +1 V and second stage -1 V. (b) First stage +2 V and second stage -2 V. (c)	First stage +3 V and second stage -3 V. (d) First stage +4 V and second stage -4 V. (e)	 First stage +5 V and second stage -5 V. 	84
Fig. 4-21 Measurement results of the output port 3 of the Butler matrix(a) First stage +1 V and second stage -1 V. (b) First stage +2 V and second stage -2 V. (c)	First stage +3 V and second stage -3 V. (d) First stage +4 V and second stage -4 V. (e)	First stage +5 V and second stage -5 V. 	85
Fig. 4-22 Measurement results of the output port 4 of the Butler matrix(a) First stage +1 V and second stage -1 V. (b) First stage +2 V and second stage -2 V. (c)	First stage +3 V and second stage -3 V. (d) First stage +4 V and second stage -4 V. (e)	First stage +5 V and second stage -5 V. 	86
Fig. 4-23 Phase difference of the Butler matrix.	87
Fig. 4-24 Lange Coupler model in ADS.	89
                                    

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